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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSC159N10LSFGATMA1

BSC159N10LSFGATMA1

MOSFET N-CH 100V 9.4A/63A TDSON

Infineon Technologies

3575 1.34
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BSC159N10LSFGATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Ta), 63A (Tc) 4.5V, 10V 15.9mOhm @ 50A, 10V 2.4V @ 72µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCMT360N65S3

FCMT360N65S3

MOSFET N-CH 650V 10A 4PQFN

onsemi

2605 1.34
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FCMT360N65S3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 360mOhm @ 5A, 10V 4.5V @ 200µA 18 nC @ 10 V ±30V 730 pF @ 400 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOB280A60L

AOB280A60L

MOSFET N-CH 600V 14A TO263

Alpha & Omega Semiconductor Inc.

2302 1.34
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AOB280A60L

Datenblatt

Tape & Reel (TR),Cut Tape (CT) aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 280mOhm @ 7A, 10V 3.6V @ 250µA 23.5 nC @ 10 V ±20V 1350 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMTH10H010SCT

DMTH10H010SCT

MOSFET N-CH 100V 100A TO220AB

Diodes Incorporated

3693 1.34
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DMTH10H010SCT

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Ta) 10V 9.5mOhm @ 13A, 10V 4V @ 250µA 56.4 nC @ 10 V ±20V 4468 pF @ 50 V - 2.5W (Ta), 187W (Tc) -55°C ~ 175°C (TJ) Through Hole
RCX120N20

RCX120N20

MOSFET N-CH 200V 12A TO220FM

Rohm Semiconductor

3560 1.35
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RCX120N20

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 12A (Tc) 10V 325mOhm @ 6A, 10V 5.25V @ 1mA 15 nC @ 10 V ±30V 740 pF @ 25 V - 2.23W (Ta), 40W (Tc) 150°C (TJ) Through Hole
STF20N60M2-EP

STF20N60M2-EP

MOSFET N-CH 600V 13A TO220FP

STMicroelectronics

2722 1.35
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Tube MDmesh™ M2-EP Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V - 4.75V @ 250µA 22 nC @ 10 V - - - - 150°C (TJ) Through Hole
NVMFS5C430NWFET1G

NVMFS5C430NWFET1G

T6-40V N 1.7 MOHMS SL

onsemi

2930 1.36
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Tape & Reel (TR) * Active - - - - - - - - - - - - - -
NVMFS5C430NLWFET1G

NVMFS5C430NLWFET1G

T6-40V N 1.4 MOHMS LL

onsemi

2481 1.36
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Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 38A (Ta), 200A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V 2V @ 250µA 70 nC @ 10 V ±20V 4300 pF @ 20 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB50N06TM

FQB50N06TM

MOSFET N-CH 60V 50A D2PAK

onsemi

2137 1.43
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FQB50N06TM

Datenblatt

Tape & Reel (TR),Cut Tape (CT) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 22mOhm @ 25A, 10V 4V @ 250µA 41 nC @ 10 V ±25V 1540 pF @ 25 V - 3.75W (Ta), 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK3A65D(STA4,Q,M)

TK3A65D(STA4,Q,M)

MOSFET N-CH 650V 3A TO220SIS

Toshiba Semiconductor and Storage

3618 1.43
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TK3A65D(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 3A (Ta) 10V 2.25Ohm @ 1.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
AOT15S60L

AOT15S60L

MOSFET N-CH 600V 15A TO220

Alpha & Omega Semiconductor Inc.

2646 1.44
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AOT15S60L

Datenblatt

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 7.5A, 10V 3.8V @ 250µA 15.6 nC @ 10 V ±30V 372 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT480L

AOT480L

MOSFET N-CH 80V 15A/180A TO220

Alpha & Omega Semiconductor Inc.

2378 1.44
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AOT480L

Datenblatt

Tube SDMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 80 V 15A (Ta), 180A (Tc) 7V, 10V 4.5mOhm @ 20A, 10V 4V @ 250µA 140 nC @ 10 V ±25V 7820 pF @ 40 V - 1.9W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTMFS5C442NLTT3G

NTMFS5C442NLTT3G

MOSFET N-CH 40V 28A/130A 5DFN

onsemi

3950 1.00
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NTMFS5C442NLTT3G

Datenblatt

Tape & Reel (TR),Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 28A (Ta), 130A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 3100 pF @ 25 V - 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOT11S65L

AOT11S65L

MOSFET N-CH 650V 11A TO220

Alpha & Omega Semiconductor Inc.

2618 1.30
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AOT11S65L

Datenblatt

Tube aMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 399mOhm @ 5.5A, 10V 4V @ 250µA 13.2 nC @ 10 V ±30V 646 pF @ 100 V - 198W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS5C430NAFT3G

NVMFS5C430NAFT3G

MOSFET N-CH 40V 35A/185A 5DFN

onsemi

3240 1.30
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NVMFS5C430NAFT3G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 185A (Tc) 10V 1.7mOhm @ 50A, 10V 3.5V @ 250µA 47 nC @ 10 V ±20V 3300 pF @ 25 V - 3.8W (Ta), 106W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RSJ450N04TL

RSJ450N04TL

MOSFET N-CH 40V 45A LPTS

Rohm Semiconductor

1949 2.30
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RSJ450N04TL

Datenblatt

Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 45A (Ta) 10V 13.5mOhm @ 25A, 10V 3V @ 1mA 43 nC @ 10 V ±20V 2400 pF @ 25 V - 50W (Tc) 150°C (TJ) Surface Mount
SIHF6N65E-GE3

SIHF6N65E-GE3

MOSFET N-CH 650V 7A TO220

Vishay Siliconix

2344 1.30
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SIHF6N65E-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
AON6276

AON6276

MOSFET N-CHANNEL 80V 100A 8DFN

Alpha & Omega Semiconductor Inc.

3999 1.31
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AON6276

Datenblatt

Tape & Reel (TR) AlphaSGT™ Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 2.6mOhm @ 20A, 10V 3.2V @ 250µA 100 nC @ 10 V ±20V 4940 pF @ 40 V - 215W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RSS070P05FRATB

RSS070P05FRATB

MOSFET P-CH 45V 7A 8SOP

Rohm Semiconductor

2965 1.31
- +

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Немедленный

RSS070P05FRATB

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 45 V 7A (Ta) 4V, 10V 27mOhm @ 7A, 10V 2.5V @ 1mA 47.6 nC @ 5 V ±20V 4100 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
TPW3R70APL,L1Q

TPW3R70APL,L1Q

PB-F POWER MOSFET TRANSISTOR DSO

Toshiba Semiconductor and Storage

2826 1.28
- +

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TPW3R70APL,L1Q

Datenblatt

Tape & Reel (TR) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 4.5V, 10V 3.7mOhm @ 45A, 10V 2.5V @ 1mA 67 nC @ 10 V ±20V 6300 pF @ 50 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount
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