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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL530STRRPBF

IRL530STRRPBF

MOSFET N-CH 100V 15A D2PAK

Vishay Siliconix

3514 1.25
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IRL530STRRPBF

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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4V, 5V 160mOhm @ 9A, 5V 2V @ 250µA 28 nC @ 5 V ±10V 930 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOB9N70L

AOB9N70L

MOSFET N-CH 700V 9A TO263

Alpha & Omega Semiconductor Inc.

3320 1.25
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AOB9N70L

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 700 V 9A (Tc) 10V 1.2Ohm @ 4.5A, 10V 4.5V @ 250µA 35 nC @ 10 V ±30V 1630 pF @ 25 V - 236W (Tc) -55°C ~ 150°C (TJ) Surface Mount
GKI10526

GKI10526

MOSFET N-CH 100V 4A 8DFN

Sanken

2552 1.25
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GKI10526

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 4A (Ta) 4.5V, 10V 47.7mOhm @ 9.3A, 10V 2.5V @ 350µA 23 nC @ 10 V ±20V 1530 pF @ 25 V - 3.1W (Ta), 46W (Tc) 150°C (TJ) Surface Mount
NTPF600N80S3Z

NTPF600N80S3Z

SF3 800V 600MOHM TO-220F

onsemi

2057 1.25
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NTPF600N80S3Z

Datenblatt

Tray SuperFET® III Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tj) 10V 600mOhm @ 4A, 10V 3.8V @ 180µA 15.5 nC @ 10 V ±20V 725 pF @ 400 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY1N100P-TRL

IXTY1N100P-TRL

MOSFET N-CH 1000V 1A TO252

IXYS

2326 1.25
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Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 1A (Tc) 10V 15Ohm @ 500mA, 10V 4.5V @ 50µA 15.5 nC @ 10 V ±20V 331 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY4N65X2-TRL

IXTY4N65X2-TRL

MOSFET N-CH 650V 4A TO252

IXYS

3460 1.25
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Tape & Reel (TR) Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 850mOhm @ 2A, 10V 5V @ 250µA 8.3 nC @ 10 V ±30V 455 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN5R6-100YSFX

PSMN5R6-100YSFX

MOSFET N-CH 100V 158A LFPAK56

Nexperia USA Inc.

2320 1.25
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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tj) 10V - - 63 nC @ 10 V - - - 294W 175°C (TJ) Surface Mount
SI7454DP-T1-GE3

SI7454DP-T1-GE3

MOSFET N-CH 100V 5A PPAK SO-8

Vishay Siliconix

3219 1.25
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SI7454DP-T1-GE3

Datenblatt

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 5A (Ta) 6V, 10V 34mOhm @ 7.8A, 10V 4V @ 250µA 30 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NVMFS5C628NLAFT3G

NVMFS5C628NLAFT3G

MOSFET N-CH 60V 28A/150A 5DFN

onsemi

3138 1.26
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NVMFS5C628NLAFT3G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 28A (Ta), 150A (Tc) 4.5V, 10V 2.4mOhm @ 50A, 10V 2V @ 135µA 52 nC @ 10 V ±20V 3600 pF @ 25 V - 3.7W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQM40022E_GE3

SQM40022E_GE3

MOSFET N-CH 40V 150A TO263

Vishay Siliconix

2032 1.26
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SQM40022E_GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 10V 1.63mOhm @ 35A, 10V 3.5V @ 250µA 160 nC @ 10 V ±20V 9200 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR2905ZTR

AUIRFR2905ZTR

MOSFET N-CH 55V 42A DPAK

Infineon Technologies

2744 1.26
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AUIRFR2905ZTR

Datenblatt

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 14.5mOhm @ 36A, 10V 4V @ 250µA 44 nC @ 10 V - 1380 pF @ 25 V - - - Surface Mount
IPI80N06S4L07AKSA2

IPI80N06S4L07AKSA2

MOSFET N-CH 60V 80A TO262-3

Infineon Technologies

6827 0.80
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IPI80N06S4L07AKSA2

Datenblatt

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 6.7mOhm @ 80A, 10V 2.2V @ 40µA 72 nC @ 10 V ±16V 5680 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP2N40-F080

FQP2N40-F080

MOSFET N-CH 400V 1.8A TO220-3

onsemi

3860 1.26
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FQP2N40-F080

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 1.8A (Tc) 10V 5.8Ohm @ 900mA, 10V 5V @ 250µA 5.5 nC @ 10 V ±30V 150 pF @ 25 V - 40W (Ta) -55°C ~ 150°C (TJ) Through Hole
TPW2R508NH,L1Q

TPW2R508NH,L1Q

PB-F POWER MOSFET TRANSISTOR DOS

Toshiba Semiconductor and Storage

3627 1.24
- +

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TPW2R508NH,L1Q

Datenblatt

Tape & Reel (TR) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 75 V 150A (Ta) 10V 2.5mOhm @ 50A, 10V 4V @ 1mA 72 nC @ 10 V ±20V 6000 pF @ 37.5 V - 800mW (Ta), 142W (Tc) 150°C Surface Mount
IPP80N06S407AKSA2

IPP80N06S407AKSA2

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies

1194 0.80
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IPP80N06S407AKSA2

Datenblatt

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 40µA 56 nC @ 10 V ±20V 4500 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6007KNX

R6007KNX

MOSFET N-CH 600V 7A TO220FM

Rohm Semiconductor

442 1.85
- +

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R6007KNX

Datenblatt

Bulk,Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 620mOhm @ 2.4A, 10V 5V @ 1mA 14.5 nC @ 10 V ±20V 470 pF @ 25 V - 46W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP380N60E

FCP380N60E

MOSFET N-CH 600V 10.2A TO220-3

onsemi

107200 0.90
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FCP380N60E

Datenblatt

Tube,Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 10.2A (Tc) 10V 380mOhm @ 5A, 10V 3.5V @ 250µA 45 nC @ 10 V ±20V 1770 pF @ 25 V - 106W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN6R5-80PS,127

PSMN6R5-80PS,127

MOSFET N-CH 80V 100A TO220AB

Nexperia USA Inc.

3902 1.27
- +

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PSMN6R5-80PS,127

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 10V 6.9mOhm @ 15A, 10V 4V @ 1mA 71 nC @ 10 V ±20V 4461 pF @ 40 V - 210W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF620STRRPBF

IRF620STRRPBF

MOSFET N-CH 200V 5.2A D2PAK

Vishay Siliconix

2628 2.14
- +

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IRF620STRRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF730SPBF

IRF730SPBF

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix

3435 1.27
- +

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Немедленный

IRF730SPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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