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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF830LPBF

IRF830LPBF

MOSFET N-CH 500V 4.5A TO262-3

Vishay Siliconix

3292 1.27
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IRF830LPBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFR8401TRL

AUIRFR8401TRL

MOSFET N-CH 40V 100A DPAK

Infineon Technologies

2156 1.27
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AUIRFR8401TRL

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 4.25mOhm @ 60A, 10V 3.9V @ 50µA 63 nC @ 10 V ±20V 2200 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMFS5C430NLWFAFT3G

NVMFS5C430NLWFAFT3G

MOSFET N-CH 40V 38A/200A 5DFN

onsemi

2903 1.27
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NVMFS5C430NLWFAFT3G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 38A (Ta), 200A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V 2V @ 250µA 70 nC @ 10 V ±20V 4300 pF @ 20 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR872ADP-T1-RE3

SIR872ADP-T1-RE3

MOSFET N-CH 150V 53.7A PPAK SO-8

Vishay Siliconix

2046 1.27
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Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 53.7A (Tc) 7.5V, 10V 18mOhm @ 20A, 10V 4.5V @ 250µA 47 nC @ 10 V ±20V 1286 pF @ 75 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB120N03S4L03ATMA1

IPB120N03S4L03ATMA1

MOSFET N-CH 30V 120A D2PAK

Infineon Technologies

15000 0.97
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IPB120N03S4L03ATMA1

Datenblatt

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 4.5V, 10V 3mOhm @ 100A, 10V 2.2V @ 40µA 72 nC @ 10 V ±16V 5300 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHB4N80E-GE3

SIHB4N80E-GE3

MOSFET N-CH 800V 4.3A D2PAK

Vishay Siliconix

3520 1.27
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SIHB4N80E-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 622 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFR4292TRL

AUIRFR4292TRL

MOSFET N-CH 250V 9.3A DPAK

Infineon Technologies

3462 1.27
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AUIRFR4292TRL

Datenblatt

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 250 V 9.3A (Tc) 10V 345mOhm @ 5.6A, 10V 5V @ 50µA 20 nC @ 10 V ±20V 705 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOB296L

AOB296L

MOSFET N CH 100V 9.5A TO263

Alpha & Omega Semiconductor Inc.

2749 1.27
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AOB296L

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 9.5A (Ta), 70A (Tc) 6V, 10V 9.7mOhm @ 20A, 10V 3.4V @ 250µA 52 nC @ 10 V ±20V 2785 pF @ 50 V - 2.1W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK2848

2SK2848

MOSFET N-CH 600V 2A TO220F

Sanken

3362 1.28
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2SK2848

Datenblatt

Bulk - Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 2A (Ta) 10V 3.8Ohm @ 1A, 10V 4V @ 250µA - ±30V 290 pF @ 10 V - 30W (Tc) 150°C (TJ) Through Hole
VN0606L-G-P003

VN0606L-G-P003

MOSFET N-CH 60V 330MA TO92-3

Microchip Technology

2560 1.28
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VN0606L-G-P003

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 330mA (Tj) 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±30V 50 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN2460N3-G-P003

VN2460N3-G-P003

MOSFET N-CH 600V 160MA TO92-3

Microchip Technology

2716 1.28
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VN2460N3-G-P003

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 160mA (Tj) 4.5V, 10V 20Ohm @ 100mA, 10V 4V @ 2mA - ±20V 150 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
VN2460N3-G-P014

VN2460N3-G-P014

MOSFET N-CH 600V 160MA TO92-3

Microchip Technology

3900 1.28
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VN2460N3-G-P014

Datenblatt

Tape & Box (TB) - Active N-Channel MOSFET (Metal Oxide) 600 V 160mA (Tj) 4.5V, 10V 20Ohm @ 100mA, 10V 4V @ 2mA - ±20V 150 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
NVMFS6H801NLWFT1G

NVMFS6H801NLWFT1G

MOSFET N-CH 80V 24A/160A 5DFN

onsemi

3353 1.28
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NVMFS6H801NLWFT1G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 24A (Ta), 160A (Tc) 4.5V, 10V 2.7mOhm @ 50A, 10V 2V @ 250µA 90 nC @ 10 V ±20V 5126 pF @ 40 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS4D4N08C

FDMS4D4N08C

MOSFET N-CH 80V 123A 8PQFN

onsemi

1826 1.21
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FDMS4D4N08C

Datenblatt

Tape & Reel (TR),Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 123A (Tc) 6V, 10V 4.3mOhm @ 44A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 4090 pF @ 40 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA60R600E6XKSA1

IPA60R600E6XKSA1

MOSFET N-CH 600V 7.3A TO220-FP

Infineon Technologies

3873 0.81
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IPA60R600E6XKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB055N08NF2SATMA1

IPB055N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-3

Infineon Technologies

3064 1.25
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Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IPA60R600C6XKSA1

IPA60R600C6XKSA1

MOSFET N-CH 600V 7.3A TO220-FP

Infineon Technologies

386 0.81
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Немедленный

IPA60R600C6XKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS6H801NT3G

NVMFS6H801NT3G

TRENCH 8 80V NFET

onsemi

3262 1.28
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NVMFS6H801NT3G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 23A (Ta), 157A (Tc) 10V 2.8mOhm @ 50A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 4120 pF @ 40 V - 3.8W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK2A65D(STA4,Q,M)

TK2A65D(STA4,Q,M)

MOSFET N-CH 650V 2A TO220SIS

Toshiba Semiconductor and Storage

3118 1.28
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TK2A65D(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 2A (Ta) 10V 3.26Ohm @ 1A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
IPB70P04P409ATMA1

IPB70P04P409ATMA1

MOSFET N-CH 40V 72A D2PAK

Infineon Technologies

3803 1.28
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Немедленный

IPB70P04P409ATMA1

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 72A (Tc) 10V 9.1mOhm @ 70A, 10V 4V @ 120µA 70 nC @ 10 V ±20V 4810 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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