Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF830LPBFMOSFET N-CH 500V 4.5A TO262-3 |
3292 | 1.27 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 610 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AUIRFR8401TRLMOSFET N-CH 40V 100A DPAK |
2156 | 1.27 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 4.25mOhm @ 60A, 10V | 3.9V @ 50µA | 63 nC @ 10 V | ±20V | 2200 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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NVMFS5C430NLWFAFT3GMOSFET N-CH 40V 38A/200A 5DFN |
2903 | 1.27 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 38A (Ta), 200A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2V @ 250µA | 70 nC @ 10 V | ±20V | 4300 pF @ 20 V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SIR872ADP-T1-RE3MOSFET N-CH 150V 53.7A PPAK SO-8 |
2046 | 1.27 |
ДобавитьНемедленный |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 53.7A (Tc) | 7.5V, 10V | 18mOhm @ 20A, 10V | 4.5V @ 250µA | 47 nC @ 10 V | ±20V | 1286 pF @ 75 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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IPB120N03S4L03ATMA1MOSFET N-CH 30V 120A D2PAK |
15000 | 0.97 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Bulk | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 120A (Tc) | 4.5V, 10V | 3mOhm @ 100A, 10V | 2.2V @ 40µA | 72 nC @ 10 V | ±16V | 5300 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SIHB4N80E-GE3MOSFET N-CH 800V 4.3A D2PAK |
3520 | 1.27 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±30V | 622 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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AUIRFR4292TRLMOSFET N-CH 250V 9.3A DPAK |
3462 | 1.27 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 250 V | 9.3A (Tc) | 10V | 345mOhm @ 5.6A, 10V | 5V @ 50µA | 20 nC @ 10 V | ±20V | 705 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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AOB296LMOSFET N CH 100V 9.5A TO263 |
2749 | 1.27 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.5A (Ta), 70A (Tc) | 6V, 10V | 9.7mOhm @ 20A, 10V | 3.4V @ 250µA | 52 nC @ 10 V | ±20V | 2785 pF @ 50 V | - | 2.1W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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2SK2848MOSFET N-CH 600V 2A TO220F |
3362 | 1.28 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk | - | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Ta) | 10V | 3.8Ohm @ 1A, 10V | 4V @ 250µA | - | ±30V | 290 pF @ 10 V | - | 30W (Tc) | 150°C (TJ) | Through Hole |
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VN0606L-G-P003MOSFET N-CH 60V 330MA TO92-3 |
2560 | 1.28 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 330mA (Tj) | 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±30V | 50 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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VN2460N3-G-P003MOSFET N-CH 600V 160MA TO92-3 |
2716 | 1.28 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 160mA (Tj) | 4.5V, 10V | 20Ohm @ 100mA, 10V | 4V @ 2mA | - | ±20V | 150 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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VN2460N3-G-P014MOSFET N-CH 600V 160MA TO92-3 |
3900 | 1.28 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Box (TB) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 160mA (Tj) | 4.5V, 10V | 20Ohm @ 100mA, 10V | 4V @ 2mA | - | ±20V | 150 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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NVMFS6H801NLWFT1GMOSFET N-CH 80V 24A/160A 5DFN |
3353 | 1.28 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 24A (Ta), 160A (Tc) | 4.5V, 10V | 2.7mOhm @ 50A, 10V | 2V @ 250µA | 90 nC @ 10 V | ±20V | 5126 pF @ 40 V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FDMS4D4N08CMOSFET N-CH 80V 123A 8PQFN |
1826 | 1.21 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 123A (Tc) | 6V, 10V | 4.3mOhm @ 44A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 4090 pF @ 40 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPA60R600E6XKSA1MOSFET N-CH 600V 7.3A TO220-FP |
3873 | 0.81 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPB055N08NF2SATMA1TRENCH 40<-<100V PG-TO263-3 |
3064 | 1.25 |
ДобавитьНемедленный |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPA60R600C6XKSA1MOSFET N-CH 600V 7.3A TO220-FP |
386 | 0.81 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NVMFS6H801NT3GTRENCH 8 80V NFET |
3262 | 1.28 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 23A (Ta), 157A (Tc) | 10V | 2.8mOhm @ 50A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 4120 pF @ 40 V | - | 3.8W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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TK2A65D(STA4,Q,M)MOSFET N-CH 650V 2A TO220SIS |
3118 | 1.28 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 2A (Ta) | 10V | 3.26Ohm @ 1A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | 150°C (TJ) | Through Hole |
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IPB70P04P409ATMA1MOSFET N-CH 40V 72A D2PAK |
3803 | 1.28 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 72A (Tc) | 10V | 9.1mOhm @ 70A, 10V | 4V @ 120µA | 70 nC @ 10 V | ±20V | 4810 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |