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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI45N06S409AKSA2

IPI45N06S409AKSA2

MOSFET N-CH 60V 45A TO262-3

Infineon Technologies

778350 0.77
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IPI45N06S409AKSA2

Datenblatt

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 10V 9.4mOhm @ 45A, 10V 4V @ 34µA 47 nC @ 10 V ±20V 3785 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6714MTRPBF

IRF6714MTRPBF

MOSFET N-CH 25V 29A DIRECTFET

Infineon Technologies

3857 1.22
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IRF6714MTRPBF

Datenblatt

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 29A (Ta), 166A (Tc) 4.5V, 10V 2.1mOhm @ 29A, 10V 2.4V @ 100µA 44 nC @ 4.5 V ±20V 3890 pF @ 13 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSC019N02KSGAUMA1

BSC019N02KSGAUMA1

MOSFET N-CH 20V 30A/100A TDSON

Infineon Technologies

2801 1.22
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BSC019N02KSGAUMA1

Datenblatt

Tape & Reel (TR) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 20 V 30A (Ta), 100A (Tc) 2.5V, 4.5V 1.95mOhm @ 50A, 4.5V 1.2V @ 350µA 85 nC @ 4.5 V ±12V 13000 pF @ 10 V - 2.8W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK5A53D(STA4,Q,M)

TK5A53D(STA4,Q,M)

MOSFET N-CH 525V 5A TO220SIS

Toshiba Semiconductor and Storage

2435 1.22
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TK5A53D(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 525 V 5A (Ta) 10V 1.5Ohm @ 2.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK6A50D(STA4,Q,M)

TK6A50D(STA4,Q,M)

MOSFET N-CH 500V 6A TO220SIS

Toshiba Semiconductor and Storage

3772 1.22
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TK6A50D(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Ta) 10V 1.4Ohm @ 3A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
BUK7222-55A,118

BUK7222-55A,118

MOSFET N-CH 55V 48A DPAK

Nexperia USA Inc.

2447 1.22
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BUK7222-55A,118

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 48A (Tc) 10V 22mOhm @ 25A, 10V 4V @ 1mA - ±20V 1597 pF @ 25 V - 103W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N06S4L05ATMA2

IPB80N06S4L05ATMA2

MOSFET N-CH 60V 80A TO263-3

Infineon Technologies

3554 1.22
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IPB80N06S4L05ATMA2

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 5.1mOhm @ 80A, 10V 2.2V @ 60µA 110 nC @ 10 V ±16V 8180 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR9220TRRPBF

IRFR9220TRRPBF

MOSFET P-CH 200V 3.6A DPAK

Vishay Siliconix

2455 1.22
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IRFR9220TRRPBF

Datenblatt

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 340 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7104DN-T1-GE3

SI7104DN-T1-GE3

MOSFET N-CH 12V 35A PPAK 1212-8

Vishay Siliconix

3613 1.22
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SI7104DN-T1-GE3

Datenblatt

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 12 V 35A (Tc) 2.5V, 4.5V 3.7mOhm @ 26.1A, 4.5V 1.8V @ 250µA 70 nC @ 10 V ±12V 2800 pF @ 6 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8401DB-T1-E3

SI8401DB-T1-E3

MOSFET P-CH 20V 3.6A 4MICROFOOT

Vishay Siliconix

2698 1.22
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SI8401DB-T1-E3

Datenblatt

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.6A (Ta) 2.5V, 4.5V 65mOhm @ 1A, 4.5V 1.4V @ 250µA 17 nC @ 4.5 V ±12V - - 1.47W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR9220PBF-BE3

IRFR9220PBF-BE3

P-CHANNEL 200V

Vishay Siliconix

2652 1.22
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IRFR9220PBF-BE3

Datenblatt

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 340 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STFU11N65M2

STFU11N65M2

MOSFET

STMicroelectronics

3167 1.22
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Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IPB45P03P4L11ATMA1

IPB45P03P4L11ATMA1

MOSFET P-CH 30V 45A TO263-3

Infineon Technologies

3879 1.00
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IPB45P03P4L11ATMA1

Datenblatt

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 4.5V, 10V 10.8mOhm @ 45A, 10V 2V @ 85µA 55 nC @ 10 V +5V, -16V 3770 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS5C423NLT3G

NTMFS5C423NLT3G

MOSFET N-CH 40V 150A 5DFN

onsemi

3895 1.22
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NTMFS5C423NLT3G

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 2mOhm @ 50A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 3100 pF @ 20 V - 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7450DP-T1-RE3

SI7450DP-T1-RE3

N-CHANNEL 200-V (D-S) MOSFET

Vishay Siliconix

3839 1.22
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Tape & Reel (TR) - Active - - - 3.2A (Ta), 19.8A (Tc) - - - - - - - - - -
BUK9Y2R4-40HX

BUK9Y2R4-40HX

BUK9Y2R4-40H/SOT669/LFPAK

Nexperia USA Inc.

3508 1.00
- +

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BUK9Y2R4-40HX

Datenblatt

Tape & Reel (TR),Bulk - Active - - - 120A (Tj) - - - - - - - - - -
DMT8008SCT

DMT8008SCT

MOSFET BVDSS: 61V~100V TO220AB T

Diodes Incorporated

2023 1.22
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DMT8008SCT

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 80 V 111A (Tc) 10V 7.5mOhm @ 30A, 10V 4V @ 1mA 34 nC @ 10 V ±20V 1950 pF @ 40 V - 2.4W (Ta), 167W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP80N10F7

STP80N10F7

MOSFET N-CH 100V 80A TO220

STMicroelectronics

3593 1.23
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STP80N10F7

Datenblatt

Tube DeepGATE™, STripFET™ VII Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 10mOhm @ 40A, 10V 4.5V @ 250µA 45 nC @ 10 V ±20V 3100 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDS8449-F085

FDS8449-F085

MOSFET N-CH 40V 7.6A 8SOIC

onsemi

3265 1.23
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FDS8449-F085

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 7.6A (Ta) 4.5V, 10V 29mOhm @ 7.6A, 10V 3V @ 250µA 11 nC @ 10 V ±20V 760 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TK5A55D(STA4,Q,M)

TK5A55D(STA4,Q,M)

MOSFET N-CH 550V 5A TO220SIS

Toshiba Semiconductor and Storage

3894 1.23
- +

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Немедленный

TK5A55D(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 5A (Ta) 10V 1.7Ohm @ 2.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
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