Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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AOB7S60LMOSFET N-CH 600V 7A TO263 |
3111 | 1.13 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | aMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 3.9V @ 250µA | 8.2 nC @ 10 V | ±30V | 372 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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TK4A80E,S4XPB-FPOWERMOSFETTRANSISTORTO-220S |
3458 | 1.09 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Ta) | 10V | 3.5Ohm @ 2A, 10V | 4V @ 400µA | 15 nC @ 10 V | ±30V | 650 pF @ 25 V | - | 35W (Tc) | 150°C | Through Hole |
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TK3A90E,S4XPB-F POWER MOSFET TRANSISTOR TO- |
3956 | 1.09 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 2.5A (Ta) | 10V | 4.6Ohm @ 1.3A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±30V | 650 pF @ 25 V | - | 35W (Tc) | 150°C | Through Hole |
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SIHA4N80E-GE3MOSFET N-CH 800V 4.3A TO220 |
3407 | 1.13 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±30V | 622 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NTMFS4H01NT1GMOSFET N-CH 25V 54A/334A 5DFN |
3165 | 1.00 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT),Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 54A (Ta), 334A (Tc) | 4.5V, 10V | 0.7mOhm @ 30A, 10V | 2.1V @ 250µA | 85 nC @ 10 V | ±20V | 5693 pF @ 12 V | - | 3.2W (Ta), 125W (Tc) | 150°C (TJ) | Surface Mount |
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SIHFS11N50A-GE3MOSFET N-CH 500V 11A TO263 |
3606 | 1.14 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±30V | 1423 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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NVMFS6H858NT1GMOSFET N-CH 80V 8.4A/29A 5DFN |
2534 | 1.14 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 8.4A (Ta), 29A (Tc) | 10V | 20.7mOhm @ 5A, 10V | 4V @ 30µA | 8.9 nC @ 10 V | ±20V | 510 pF @ 40 V | - | 3.5W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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CSD18511KTTMOSFET N-CH 40V 194A DDPAK |
3852 | 1.14 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 194A (Ta) | 4.5V, 10V | 2.6mOhm @ 100A, 10V | 2.4V @ 250µA | 64 nC @ 10 V | ±20V | 5940 pF @ 20 V | - | 188W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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DMTH6002LPSWQ-13MOSFET BVDSS: 41V~60V POWERDI506 |
3657 | 1.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 205A (Tc) | 4.5V, 10V | 2mOhm @ 30A, 10V | 3V @ 250µA | 131 nC @ 10 V | ±20V | 8289 pF @ 30 V | - | 3W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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DMTH6005LCTMOSFET N-CH 60V 100A TO220AB |
2728 | 1.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 3V @ 250µA | 47.1 nC @ 10 V | ±20V | 2962 pF @ 30 V | - | 2.8W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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AOWF412MOSFET N-CH 100V 7.8A/30A |
2670 | 1.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | SDMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.8A (Ta), 30A (Tc) | 7V, 10V | 15.8mOhm @ 20A, 10V | 3.8V @ 250µA | 54 nC @ 10 V | ±25V | 3220 pF @ 50 V | - | 2.1W (Ta), 33W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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AOTF5N100MOSFET N-CH 1000V 4A TO220-3F |
3166 | 1.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | 10V | 4.2Ohm @ 2.5A, 10V | 4.5V @ 250µA | 23 nC @ 10 V | ±30V | 1150 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPP084N06L3GXKSA1MOSFET N-CH 60V 50A TO220-3 |
1664 | 0.73 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 8.4mOhm @ 50A, 10V | 2.2V @ 34µA | 29 nC @ 4.5 V | ±20V | 4900 pF @ 30 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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STP12N65M2POWER MOSFET |
3819 | 1.15 |
ДобавитьНемедленный |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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SIR494DP-T1-GE3MOSFET N-CH 12V 60A PPAK SO-8 |
2636 | 1.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12 V | 60A (Tc) | 4.5V, 10V | 1.2mOhm @ 20A, 10V | 2.5V @ 250µA | 150 nC @ 10 V | ±20V | 6900 pF @ 6 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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ZDX130N50MOSFET N-CH 500V 13A TO220FM |
3598 | 1.72 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 10V | 520mOhm @ 6.5A, 10V | 4.5V @ 1mA | 40 nC @ 10 V | ±30V | 2180 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Through Hole |
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SI7328DN-T1-GE3MOSFET N-CH 30V 35A PPAK1212-8 |
2533 | 1.16 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 6.6mOhm @ 18.9A, 10V | 1.5V @ 250µA | 31.5 nC @ 4.5 V | ±12V | 2610 pF @ 15 V | - | 3.78W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount |
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SI4626ADY-T1-E3MOSFET N-CH 30V 30A 8SO |
3871 | 1.16 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.5V @ 250µA | 125 nC @ 10 V | ±20V | 5370 pF @ 15 V | - | 3W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI4626ADY-T1-GE3MOSFET N-CH 30V 30A 8SO |
3756 | 1.16 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.5V @ 250µA | 125 nC @ 10 V | ±20V | 5370 pF @ 15 V | - | 3W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI7104DN-T1-E3MOSFET N-CH 12V 35A PPAK 1212-8 |
3166 | 1.16 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 35A (Tc) | 2.5V, 4.5V | 3.7mOhm @ 26.1A, 4.5V | 1.8V @ 250µA | 70 nC @ 10 V | ±12V | 2800 pF @ 6 V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |