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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AOB7S60L

AOB7S60L

MOSFET N-CH 600V 7A TO263

Alpha & Omega Semiconductor Inc.

3111 1.13
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AOB7S60L

Datenblatt

Tape & Reel (TR),Cut Tape (CT) aMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 3.9V @ 250µA 8.2 nC @ 10 V ±30V 372 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK4A80E,S4X

TK4A80E,S4X

PB-FPOWERMOSFETTRANSISTORTO-220S

Toshiba Semiconductor and Storage

3458 1.09
- +

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TK4A80E,S4X

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Ta) 10V 3.5Ohm @ 2A, 10V 4V @ 400µA 15 nC @ 10 V ±30V 650 pF @ 25 V - 35W (Tc) 150°C Through Hole
TK3A90E,S4X

TK3A90E,S4X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

3956 1.09
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TK3A90E,S4X

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 2.5A (Ta) 10V 4.6Ohm @ 1.3A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 650 pF @ 25 V - 35W (Tc) 150°C Through Hole
SIHA4N80E-GE3

SIHA4N80E-GE3

MOSFET N-CH 800V 4.3A TO220

Vishay Siliconix

3407 1.13
- +

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SIHA4N80E-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 622 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS4H01NT1G

NTMFS4H01NT1G

MOSFET N-CH 25V 54A/334A 5DFN

onsemi

3165 1.00
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NTMFS4H01NT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 54A (Ta), 334A (Tc) 4.5V, 10V 0.7mOhm @ 30A, 10V 2.1V @ 250µA 85 nC @ 10 V ±20V 5693 pF @ 12 V - 3.2W (Ta), 125W (Tc) 150°C (TJ) Surface Mount
SIHFS11N50A-GE3

SIHFS11N50A-GE3

MOSFET N-CH 500V 11A TO263

Vishay Siliconix

3606 1.14
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SIHFS11N50A-GE3

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFS6H858NT1G

NVMFS6H858NT1G

MOSFET N-CH 80V 8.4A/29A 5DFN

onsemi

2534 1.14
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NVMFS6H858NT1G

Datenblatt

Tape & Reel (TR),Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 8.4A (Ta), 29A (Tc) 10V 20.7mOhm @ 5A, 10V 4V @ 30µA 8.9 nC @ 10 V ±20V 510 pF @ 40 V - 3.5W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
CSD18511KTT

CSD18511KTT

MOSFET N-CH 40V 194A DDPAK

Texas Instruments

3852 1.14
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CSD18511KTT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 194A (Ta) 4.5V, 10V 2.6mOhm @ 100A, 10V 2.4V @ 250µA 64 nC @ 10 V ±20V 5940 pF @ 20 V - 188W (Ta) -55°C ~ 175°C (TJ) Surface Mount
DMTH6002LPSWQ-13

DMTH6002LPSWQ-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

3657 1.15
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DMTH6002LPSWQ-13

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 205A (Tc) 4.5V, 10V 2mOhm @ 30A, 10V 3V @ 250µA 131 nC @ 10 V ±20V 8289 pF @ 30 V - 3W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMTH6005LCT

DMTH6005LCT

MOSFET N-CH 60V 100A TO220AB

Diodes Incorporated

2728 1.15
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DMTH6005LCT

Datenblatt

Tube Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V 3V @ 250µA 47.1 nC @ 10 V ±20V 2962 pF @ 30 V - 2.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOWF412

AOWF412

MOSFET N-CH 100V 7.8A/30A

Alpha & Omega Semiconductor Inc.

2670 1.15
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AOWF412

Datenblatt

Tube SDMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 7.8A (Ta), 30A (Tc) 7V, 10V 15.8mOhm @ 20A, 10V 3.8V @ 250µA 54 nC @ 10 V ±25V 3220 pF @ 50 V - 2.1W (Ta), 33W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOTF5N100

AOTF5N100

MOSFET N-CH 1000V 4A TO220-3F

Alpha & Omega Semiconductor Inc.

3166 1.15
- +

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AOTF5N100

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 4.2Ohm @ 2.5A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 1150 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP084N06L3GXKSA1

IPP084N06L3GXKSA1

MOSFET N-CH 60V 50A TO220-3

Infineon Technologies

1664 0.73
- +

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IPP084N06L3GXKSA1

Datenblatt

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.4mOhm @ 50A, 10V 2.2V @ 34µA 29 nC @ 4.5 V ±20V 4900 pF @ 30 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP12N65M2

STP12N65M2

POWER MOSFET

STMicroelectronics

3819 1.15
- +

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Немедленный

Tube * Active - - - - - - - - - - - - - -
SIR494DP-T1-GE3

SIR494DP-T1-GE3

MOSFET N-CH 12V 60A PPAK SO-8

Vishay Siliconix

2636 1.15
- +

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Немедленный

SIR494DP-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 60A (Tc) 4.5V, 10V 1.2mOhm @ 20A, 10V 2.5V @ 250µA 150 nC @ 10 V ±20V 6900 pF @ 6 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ZDX130N50

ZDX130N50

MOSFET N-CH 500V 13A TO220FM

Rohm Semiconductor

3598 1.72
- +

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ZDX130N50

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 520mOhm @ 6.5A, 10V 4.5V @ 1mA 40 nC @ 10 V ±30V 2180 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
SI7328DN-T1-GE3

SI7328DN-T1-GE3

MOSFET N-CH 30V 35A PPAK1212-8

Vishay Siliconix

2533 1.16
- +

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Немедленный

SI7328DN-T1-GE3

Datenblatt

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 6.6mOhm @ 18.9A, 10V 1.5V @ 250µA 31.5 nC @ 4.5 V ±12V 2610 pF @ 15 V - 3.78W (Ta), 52W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SI4626ADY-T1-E3

SI4626ADY-T1-E3

MOSFET N-CH 30V 30A 8SO

Vishay Siliconix

3871 1.16
- +

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Немедленный

SI4626ADY-T1-E3

Datenblatt

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 3.3mOhm @ 15A, 10V 2.5V @ 250µA 125 nC @ 10 V ±20V 5370 pF @ 15 V - 3W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4626ADY-T1-GE3

SI4626ADY-T1-GE3

MOSFET N-CH 30V 30A 8SO

Vishay Siliconix

3756 1.16
- +

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Немедленный

SI4626ADY-T1-GE3

Datenblatt

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 3.3mOhm @ 15A, 10V 2.5V @ 250µA 125 nC @ 10 V ±20V 5370 pF @ 15 V - 3W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7104DN-T1-E3

SI7104DN-T1-E3

MOSFET N-CH 12V 35A PPAK 1212-8

Vishay Siliconix

3166 1.16
- +

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Немедленный

SI7104DN-T1-E3

Datenblatt

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 12 V 35A (Tc) 2.5V, 4.5V 3.7mOhm @ 26.1A, 4.5V 1.8V @ 250µA 70 nC @ 10 V ±12V 2800 pF @ 6 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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