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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK661R6-30C,118

BUK661R6-30C,118

MOSFET N-CH 30V 120A D2PAK

Nexperia USA Inc.

3338 1.17
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BUK661R6-30C,118

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Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 1.6mOhm @ 25A, 10V 2.8V @ 1mA 229 nC @ 10 V ±16V 14964 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMN90H8D5HCTI

DMN90H8D5HCTI

MOSFET N-CH 900V 2.5A ITO220AB

Diodes Incorporated

2024 1.17
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DMN90H8D5HCTI

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Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 2.5A (Tc) 10V 7Ohm @ 1A, 10V 5V @ 250µA 7.9 nC @ 10 V ±30V 470 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF380N60-F154

FCPF380N60-F154

MOSFET N-CH 600V 10.2A TO220F-3

onsemi

3950 1.17
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Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 10.2A (Tj) - 380mOhm @ 5A, 10V 3.5V @ 250µA 40 nC @ 10 V ±20V 1665 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4866DY-T1-GE3

SI4866DY-T1-GE3

MOSFET N-CH 12V 11A 8SO

Vishay Siliconix

3674 1.17
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SI4866DY-T1-GE3

Datenblatt

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 12 V 11A (Ta) 2.5V, 4.5V 5.5mOhm @ 17A, 4.5V 600mV @ 250µA (Min) 30 nC @ 4.5 V ±8V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHA15N50E-E3

SIHA15N50E-E3

MOSFET N-CH 500V 14.5A TO220

Vishay Siliconix

2524 1.17
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SIHA15N50E-E3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14.5A (Tc) 10V 280mOhm @ 7.5A, 10V 4V @ 250µA 66 nC @ 10 V ±30V 1162 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHFZ48S-GE3

SIHFZ48S-GE3

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix

3596 1.17
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SIHFZ48S-GE3

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Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 3.7W (Ta), 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF840LCPBF-BE3

IRF840LCPBF-BE3

MOSFET N-CHANNEL 500V

Vishay Siliconix

2407 1.17
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IRF840LCPBF-BE3

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
DMJ70H1D4SJ3

DMJ70H1D4SJ3

MOSFET BVDSS: 651V~800V TO251 TU

Diodes Incorporated

3246 1.17
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DMJ70H1D4SJ3

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Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 6.1A (Tc) 10V 1.4Ohm @ 1A, 10V 5V @ 250µA 9 nC @ 10 V ±30V 273 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN4R1-60YLX

PSMN4R1-60YLX

MOSFET N-CH 60V 100A LFPAK56

Nexperia USA Inc.

3012 1.17
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PSMN4R1-60YLX

Datenblatt

Tape & Reel (TR) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Ta) 5V, 10V 4.1mOhm @ 25A, 10V 2.1V @ 1mA 103 nC @ 10 V ±20V 7853 pF @ 25 V - 238W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FCPF380N60E-F154

FCPF380N60E-F154

MOSFET N-CH 600V 10.2A TO220F-3

onsemi

3320 1.18
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Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 10.2A (Tj) - 380mOhm @ 5A, 10V 3.5V @ 250µA 45 nC @ 10 V ±20V 1770 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP110N8F7

STP110N8F7

MOSFET N-CH 80V 80A TO220

STMicroelectronics

3565 1.18
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STP110N8F7

Datenblatt

Tube STripFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 10V 7.5mOhm @ 40A, 10V 4.5V @ 250µA 46.8 nC @ 10 V ±20V 3435 pF @ 40 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
STF10P6F6

STF10P6F6

MOSFET P-CH 60V 10A TO220FP

STMicroelectronics

3324 1.18
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STF10P6F6

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Tube DeepGATE™, STripFET™ VI Obsolete P-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 160mOhm @ 5A, 10V 4V @ 250µA 6.4 nC @ 10 V ±20V 340 pF @ 48 V - 20W (Tc) 150°C (TJ) Through Hole
AOB1404L

AOB1404L

MOSFET N-CH 40V 15A/220A TO263

Alpha & Omega Semiconductor Inc.

3867 1.18
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AOB1404L

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 15A (Ta), 220A (Tc) 10V 3.9mOhm @ 20A, 10V 3.7V @ 250µA 86 nC @ 10 V ±20V 4300 pF @ 20 V - 2.1W (Ta), 417W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD70N12S3L12ATMA1

IPD70N12S3L12ATMA1

MOSFET N-CHANNEL_100+

Infineon Technologies

2637 1.18
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IPD70N12S3L12ATMA1

Datenblatt

Tape & Reel (TR) * Not For New Designs - - - - - - - - - - - - - -
NTMFS5113PLT1G

NTMFS5113PLT1G

NFET SO8FL 60V 69A 16MOHM

onsemi

3586 1.18
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Tape & Reel (TR) - Active - - - 10A (Ta), 64A (Tc) - - - - - - - - - -
TN0604N3-G-P005

TN0604N3-G-P005

MOSFET N-CH 40V 700MA TO92-3

Microchip Technology

2018 1.19
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TN0604N3-G-P005

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 700mA (Tj) 5V, 10V 750mOhm @ 1.5A, 10V 1.6V @ 1mA - ±20V 190 pF @ 20 V - 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
TN0604N3-G-P013

TN0604N3-G-P013

MOSFET N-CH 40V 700MA TO92-3

Microchip Technology

3333 1.19
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TN0604N3-G-P013

Datenblatt

Tape & Box (TB) - Active N-Channel MOSFET (Metal Oxide) 40 V 700mA (Tj) 5V, 10V 750mOhm @ 1.5A, 10V 1.6V @ 1mA - ±20V 190 pF @ 20 V - 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
NVMYS4D1N06CLTWG

NVMYS4D1N06CLTWG

MOSFET N-CH 60V 22A/100A LFPAK4

onsemi

2608 1.19
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NVMYS4D1N06CLTWG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 22A (Ta), 100A (Tc) 4.5V, 10V 4mOhm @ 50A, 10V 2V @ 80µA 34 nC @ 10 V ±20V 2200 pF @ 25 V - 3.7W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R5005CNJTL

R5005CNJTL

MOSFET N-CH 500V 5A LPTS

Rohm Semiconductor

3044 1.19
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R5005CNJTL

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Ta) 10V 1.6Ohm @ 2.5A, 10V 4.5V @ 1mA 10.8 nC @ 10 V ±30V 320 pF @ 25 V - 40W (Tc) 150°C (TJ) Surface Mount
NTMFS5C646NLT3G

NTMFS5C646NLT3G

MOSFET N-CH 60V 20A/93A 5DFN

onsemi

3395 1.19
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NTMFS5C646NLT3G

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta), 93A (Tc) 4.5V, 10V 4.7mOhm @ 50A, 10V 2V @ 250µA 33.7 nC @ 10 V ±20V 2164 pF @ 25 V - 3.7W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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