Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
DMT10H9M9SCT

DMT10H9M9SCT

MOSFET BVDSS: 61V~100V TO220AB T

Diodes Incorporated

2691 1.23
- +

Добавить

Немедленный

DMT10H9M9SCT

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 99A (Tc) 6V, 10V 8.8mOhm @ 20A, 10V 3.9V @ 250µA 30 nC @ 10 V ±20V 2085 pF @ 50 V - 2.3W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
DMT10H9M9LCT

DMT10H9M9LCT

MOSFET BVDSS: 61V~100V TO220AB T

Diodes Incorporated

3775 1.23
- +

Добавить

Немедленный

DMT10H9M9LCT

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 101A (Tc) 4.5V, 10V 8.5mOhm @ 20A, 10V 2.5V @ 250µA 40.2 nC @ 10 V ±20V 2309 pF @ 50 V - 2.3W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
DMTH4002SCTBQ-13

DMTH4002SCTBQ-13

MOSFET BVDSS: 31V~40V TO263 T&R

Diodes Incorporated

2800 1.24
- +

Добавить

Немедленный

DMTH4002SCTBQ-13

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 192A (Tc) 10V 3mOhm @ 90A, 10V 4V @ 250µA 77.5 nC @ 10 V ±20V 7180 pF @ 20 V - 6W (Ta), 166.7W (Tc) -55°C ~ 175°C (TJ) Surface Mount
N0439N-S19-AY

N0439N-S19-AY

MOSFET N-CH 40V 90A TO220

Renesas Electronics America Inc

2675 1.24
- +

Добавить

Немедленный

N0439N-S19-AY

Datenblatt

Tape & Reel (TR) - Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 3.3mOhm @ 45A, 10V 4V @ 250µA 102 nC @ 10 V ±20V 5850 pF @ 25 V - 1.8W (Ta), 147W (Tc) 175°C (TJ) Through Hole
NVMYS003N08LHTWG

NVMYS003N08LHTWG

T8 80V LL LFPAK

onsemi

2976 1.24
- +

Добавить

Немедленный

NVMYS003N08LHTWG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 22A (Ta), 132A (Tc) 4.5V, 10V 3.3mOhm @ 50A, 10V 2V @ 183µA 64 nC @ 10 V ±20V 3735 pF @ 40 V - 3.8W (Ta), 137W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF7732S2TR

AUIRF7732S2TR

MOSFET N-CH 40V 14A DIRECTFET SC

Infineon Technologies

2856 1.24
- +

Добавить

Немедленный

AUIRF7732S2TR

Datenblatt

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta) 10V 6.95mOhm @ 33A, 10V 4V @ 50µA 45 nC @ 10 V ±20V 1700 pF @ 25 V - 2.5W (Ta), 41W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMFS6H801NLT1G

NVMFS6H801NLT1G

MOSFET N-CH 80V 24A/160A 5DFN

onsemi

3353 1.24
- +

Добавить

Немедленный

NVMFS6H801NLT1G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 24A (Ta), 160A (Tc) 4.5V, 10V 2.7mOhm @ 50A, 10V 2V @ 250µA 90 nC @ 10 V ±20V 5126 pF @ 40 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR2905ZTRL

AUIRFR2905ZTRL

MOSFET N-CH 55V 42A DPAK

Infineon Technologies

2195 1.24
- +

Добавить

Немедленный

AUIRFR2905ZTRL

Datenblatt

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 14.5mOhm @ 36A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1380 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSF134N10NJ3GXUMA1

BSF134N10NJ3GXUMA1

MOSFET N-CH 100V 9A/40A 2WDSON

Infineon Technologies

2918 1.00
- +

Добавить

Немедленный

BSF134N10NJ3GXUMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 40A (Tc) 6V, 10V 13.4mOhm @ 30A, 10V 3.5V @ 40µA 30 nC @ 10 V ±20V 2300 pF @ 50 V - 2.2W (Ta), 43W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPA126N10NM3SXKSA1

IPA126N10NM3SXKSA1

MOSFET N-CH 100V 39A TO220

Infineon Technologies

2003 1.21
- +

Добавить

Немедленный

IPA126N10NM3SXKSA1

Datenblatt

Tube OptiMOS™3 Active N-Channel MOSFET (Metal Oxide) 100 V 39A (Tc) 6V, 10V 12.6mOhm @ 39A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 33W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOW11S60

AOW11S60

MOSFET N-CH 600V 11A TO262

Alpha & Omega Semiconductor Inc.

3264 1.24
- +

Добавить

Немедленный

AOW11S60

Datenblatt

Tube - Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 399mOhm @ 3.8A, 10V 4.1V @ 250µA 11 nC @ 10 V ±30V 545 pF @ 100 V - 178W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOWF11S60

AOWF11S60

MOSFET N-CH 600V 11A TO262F

Alpha & Omega Semiconductor Inc.

2308 1.24
- +

Добавить

Немедленный

AOWF11S60

Datenblatt

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 399mOhm @ 3.8A, 10V 4.1V @ 250µA 11 nC @ 10 V ±30V 545 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF11S60L

AOTF11S60L

MOSFET N-CH 600V 11A TO220-3F

Alpha & Omega Semiconductor Inc.

3749 1.24
- +

Добавить

Немедленный

AOTF11S60L

Datenblatt

Tube aMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 399mOhm @ 3.8A, 10V 4.1V @ 250µA 11 nC @ 10 V ±30V 545 pF @ 100 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK7A45DA(STA4,Q,M)

TK7A45DA(STA4,Q,M)

MOSFET N-CH 450V 6.5A TO220SIS

Toshiba Semiconductor and Storage

3822 1.24
- +

Добавить

Немедленный

TK7A45DA(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 6.5A (Ta) 10V 1.2Ohm @ 3.3A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
IPD033N06NATMA1

IPD033N06NATMA1

MOSFET N-CH 60V 90A TO252-3

Infineon Technologies

3863 1.25
- +

Добавить

Немедленный

IPD033N06NATMA1

Datenblatt

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 6V, 10V 3.3mOhm @ 90A, 10V 3.3V @ 50µA 44 nC @ 10 V ±20V 3400 pF @ 30 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STD13N50DM2AG

STD13N50DM2AG

POWER TRANSISTORS

STMicroelectronics

3850 1.25
- +

Добавить

Немедленный

Tape & Reel (TR) - Active - - - 11A (Tc) - - - - - - - - - -
AOB600A60L

AOB600A60L

MOSFET N-CH 600V 8A TO263

Alpha & Omega Semiconductor Inc.

3659 1.25
- +

Добавить

Немедленный

AOB600A60L

Datenblatt

Tape & Reel (TR),Cut Tape (CT) aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 250µA 11.5 nC @ 10 V ±20V 608 pF @ 100 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SK3798(STA4,Q,M)

2SK3798(STA4,Q,M)

POWER MOSFET TRANSISTOR TO-220(S

Toshiba Semiconductor and Storage

2745 1.22
- +

Добавить

Немедленный

2SK3798(STA4,Q,M)

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 4A (Ta) 10V 3.5Ohm @ 2A, 10V 4V @ 1mA 26 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C Through Hole
R6006ANDTL

R6006ANDTL

MOSFET N-CH 600V 6A CPT

Rohm Semiconductor

2350 2.35
- +

Добавить

Немедленный

R6006ANDTL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
IPB45P03P4L11ATMA2

IPB45P03P4L11ATMA2

MOSFET_(20V 40V) PG-TO263-3

Infineon Technologies

2750 1.22
- +

Добавить

Немедленный

IPB45P03P4L11ATMA2

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 4.5V, 10V 10.8mOhm @ 45A, 10V 2V @ 85µA 55 nC @ 10 V +5V, -16V 3770 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 42446 Records«Prev1... 11071108110911101111111211131114...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи