Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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IPB050N10NF2SATMA1TRENCH >=100V |
3661 | 1.29 |
ДобавитьНемедленный |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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NVD260N65S3T4GSF3 EASY AUTO 260MOHM DPAK |
2897 | 1.29 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 260mOhm @ 6A, 10V | 4.5V @ 290µA | 23.5 nC @ 10 V | ±30V | 1042 pF @ 400 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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AOT5N100MOSFET N-CH 1000V 4A TO220 |
3503 | 1.29 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | 10V | 4.2Ohm @ 2.5A, 10V | 4.5V @ 250µA | 23 nC @ 10 V | ±30V | 1150 pF @ 25 V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AOTF10N50FDMOSFET N-CH 500V 10A TO220-3F |
2825 | 1.29 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4.2V @ 250µA | 35 nC @ 10 V | ±30V | 1240 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NVMFS5C430NWFAFT3GMOSFET N-CH 40V 35A/185A 5DFN |
3613 | 1.29 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 35A (Ta), 185A (Tc) | 10V | 1.7mOhm @ 50A, 10V | 3.5V @ 250µA | 47 nC @ 10 V | ±20V | 3300 pF @ 25 V | - | 3.8W (Ta), 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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BSC019N04LSTATMA1DIFFERENTIATED MOSFETS |
3590 | 1.29 |
ДобавитьНемедленный |
Tape & Reel (TR) | - | Active | - | - | - | 28A (Ta), 161A (Tc) | - | - | - | - | - | - | - | - | - | - | |
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SIHB12N60ET1-GE3MOSFET N-CH 600V 12A TO263 |
3113 | 1.29 |
ДобавитьНемедленный |
Bulk | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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SIHB12N60ET5-GE3MOSFET N-CH 600V 12A TO263 |
2795 | 1.29 |
ДобавитьНемедленный |
Bulk | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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BUK7E8R3-40E,127MOSFET N-CH 40V 75A I2PAK |
3960 | 1.29 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 7.4mOhm @ 20A, 10V | 4V @ 1mA | 24 nC @ 10 V | ±20V | 1730 pF @ 25 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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STL110NS3LLH7MOSFET N-CH 30V 120A POWERFLAT |
3980 | 1.29 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | STripFET™ H7 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 120A (Tc) | 4.5V, 10V | 3.4mOhm @ 14A, 10V | 2.3V @ 1mA | 13.7 nC @ 4.5 V | ±20V | 2110 pF @ 25 V | - | 4W (Ta), 75W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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STF9HN65M2MOSFET N-CH 650V 5.5A TO220FP |
3637 | 1.29 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | MDmesh™ M2 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 5.5A (Tc) | 10V | 820mOhm @ 2.5A, 10V | 4V @ 250µA | 11.5 nC @ 10 V | ±25V | 325 pF @ 100 V | - | 20W (Tc) | 150°C (TJ) | Through Hole |
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IPI80N06S407AKSA2MOSFET N-CH 60V 80A TO262-3 |
8500 | 0.82 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 7.4mOhm @ 80A, 10V | 4V @ 40µA | 56 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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SIDR608DP-T1-RE3MOSFET N-CH 45V 51A/208A PPAK |
2636 | 1.29 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 51A (Ta), 208A (Tc) | 4.5V, 10V | 1.2mOhm @ 20A, 10V | 2.3V @ 250µA | 167 nC @ 10 V | +20V, -16V | 8900 pF @ 20 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IXTY01N100-TRLMOSFET N-CH 1000V 100MA TO252 |
2794 | 1.29 |
ДобавитьНемедленный |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 100mA (Tc) | 10V | 80Ohm @ 50mA, 10V | 4.5V @ 25µA | 6.9 nC @ 10 V | ±20V | 54 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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NVMFS5C628NLWFAFT3GMOSFET N-CH 60V 28A/150A 5DFN |
2064 | 1.30 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 28A (Ta), 150A (Tc) | 4.5V, 10V | 2.4mOhm @ 50A, 10V | 2V @ 135µA | 52 nC @ 10 V | ±20V | 3600 pF @ 25 V | - | 3.7W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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AON6260MOSFET N-CH 60V 41A/85A 8DFN |
3936 | 1.30 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | - | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 41A (Ta), 85A (Tc) | 4.5V, 10V | 2.4mOhm @ 20A, 10V | 2.5V @ 250µA | 115 nC @ 10 V | ±20V | 5578 pF @ 30 V | - | 7.3W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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DMTH61M8LPSQ-13MOSFET BVDSS: 41V~60V POWERDI506 |
3490 | 1.30 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 225A (Tc) | 4.5V, 10V | 1.6mOhm @ 30A, 10V | 3V @ 250µA | 115.5 nC @ 10 V | ±20V | 8320 pF @ 30 V | - | 3.2W (Ta), 187.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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TN2501N8-GMOSFET N-CH 18V 400MA TO243AA |
3641 | 1.30 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 18 V | 400mA (Tj) | 1.2V, 3V | 2.5Ohm @ 200mA, 3V | 1V @ 1mA | - | ±20V | 110 pF @ 15 V | - | 1.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPD50R399CPATMA1LOW POWER_LEGACY |
3736 | 1.30 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | * | Not For New Designs | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SIHP6N80E-GE3MOSFET N-CH 800V 5.4A TO220AB |
3757 | 1.30 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.4A (Tc) | 10V | 940mOhm @ 3A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±30V | 827 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |