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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB050N10NF2SATMA1

IPB050N10NF2SATMA1

TRENCH >=100V

Infineon Technologies

3661 1.29
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Немедленный

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
NVD260N65S3T4G

NVD260N65S3T4G

SF3 EASY AUTO 260MOHM DPAK

onsemi

2897 1.29
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NVD260N65S3T4G

Datenblatt

Tape & Reel (TR) SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 260mOhm @ 6A, 10V 4.5V @ 290µA 23.5 nC @ 10 V ±30V 1042 pF @ 400 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOT5N100

AOT5N100

MOSFET N-CH 1000V 4A TO220

Alpha & Omega Semiconductor Inc.

3503 1.29
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AOT5N100

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 4.2Ohm @ 2.5A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 1150 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF10N50FD

AOTF10N50FD

MOSFET N-CH 500V 10A TO220-3F

Alpha & Omega Semiconductor Inc.

2825 1.29
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AOTF10N50FD

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4.2V @ 250µA 35 nC @ 10 V ±30V 1240 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS5C430NWFAFT3G

NVMFS5C430NWFAFT3G

MOSFET N-CH 40V 35A/185A 5DFN

onsemi

3613 1.29
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NVMFS5C430NWFAFT3G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 185A (Tc) 10V 1.7mOhm @ 50A, 10V 3.5V @ 250µA 47 nC @ 10 V ±20V 3300 pF @ 25 V - 3.8W (Ta), 106W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC019N04LSTATMA1

BSC019N04LSTATMA1

DIFFERENTIATED MOSFETS

Infineon Technologies

3590 1.29
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Tape & Reel (TR) - Active - - - 28A (Ta), 161A (Tc) - - - - - - - - - -
SIHB12N60ET1-GE3

SIHB12N60ET1-GE3

MOSFET N-CH 600V 12A TO263

Vishay Siliconix

3113 1.29
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Bulk E Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB12N60ET5-GE3

SIHB12N60ET5-GE3

MOSFET N-CH 600V 12A TO263

Vishay Siliconix

2795 1.29
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Bulk E Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK7E8R3-40E,127

BUK7E8R3-40E,127

MOSFET N-CH 40V 75A I2PAK

Nexperia USA Inc.

3960 1.29
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Немедленный

BUK7E8R3-40E,127

Datenblatt

Tube Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 7.4mOhm @ 20A, 10V 4V @ 1mA 24 nC @ 10 V ±20V 1730 pF @ 25 V - 96W (Tc) -55°C ~ 175°C (TJ) Through Hole
STL110NS3LLH7

STL110NS3LLH7

MOSFET N-CH 30V 120A POWERFLAT

STMicroelectronics

3980 1.29
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STL110NS3LLH7

Datenblatt

Tape & Reel (TR),Cut Tape (CT) STripFET™ H7 Obsolete N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 4.5V, 10V 3.4mOhm @ 14A, 10V 2.3V @ 1mA 13.7 nC @ 4.5 V ±20V 2110 pF @ 25 V - 4W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STF9HN65M2

STF9HN65M2

MOSFET N-CH 650V 5.5A TO220FP

STMicroelectronics

3637 1.29
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STF9HN65M2

Datenblatt

Tube MDmesh™ M2 Obsolete N-Channel MOSFET (Metal Oxide) 650 V 5.5A (Tc) 10V 820mOhm @ 2.5A, 10V 4V @ 250µA 11.5 nC @ 10 V ±25V 325 pF @ 100 V - 20W (Tc) 150°C (TJ) Through Hole
IPI80N06S407AKSA2

IPI80N06S407AKSA2

MOSFET N-CH 60V 80A TO262-3

Infineon Technologies

8500 0.82
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IPI80N06S407AKSA2

Datenblatt

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 40µA 56 nC @ 10 V ±20V 4500 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIDR608DP-T1-RE3

SIDR608DP-T1-RE3

MOSFET N-CH 45V 51A/208A PPAK

Vishay Siliconix

2636 1.29
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SIDR608DP-T1-RE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 45 V 51A (Ta), 208A (Tc) 4.5V, 10V 1.2mOhm @ 20A, 10V 2.3V @ 250µA 167 nC @ 10 V +20V, -16V 8900 pF @ 20 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY01N100-TRL

IXTY01N100-TRL

MOSFET N-CH 1000V 100MA TO252

IXYS

2794 1.29
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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 1000 V 100mA (Tc) 10V 80Ohm @ 50mA, 10V 4.5V @ 25µA 6.9 nC @ 10 V ±20V 54 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFS5C628NLWFAFT3G

NVMFS5C628NLWFAFT3G

MOSFET N-CH 60V 28A/150A 5DFN

onsemi

2064 1.30
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Немедленный

NVMFS5C628NLWFAFT3G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 28A (Ta), 150A (Tc) 4.5V, 10V 2.4mOhm @ 50A, 10V 2V @ 135µA 52 nC @ 10 V ±20V 3600 pF @ 25 V - 3.7W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AON6260

AON6260

MOSFET N-CH 60V 41A/85A 8DFN

Alpha & Omega Semiconductor Inc.

3936 1.30
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Немедленный

AON6260

Datenblatt

Tape & Reel (TR) - Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 41A (Ta), 85A (Tc) 4.5V, 10V 2.4mOhm @ 20A, 10V 2.5V @ 250µA 115 nC @ 10 V ±20V 5578 pF @ 30 V - 7.3W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMTH61M8LPSQ-13

DMTH61M8LPSQ-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

3490 1.30
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DMTH61M8LPSQ-13

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 225A (Tc) 4.5V, 10V 1.6mOhm @ 30A, 10V 3V @ 250µA 115.5 nC @ 10 V ±20V 8320 pF @ 30 V - 3.2W (Ta), 187.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TN2501N8-G

TN2501N8-G

MOSFET N-CH 18V 400MA TO243AA

Microchip Technology

3641 1.30
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TN2501N8-G

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 18 V 400mA (Tj) 1.2V, 3V 2.5Ohm @ 200mA, 3V 1V @ 1mA - ±20V 110 pF @ 15 V - 1.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50R399CPATMA1

IPD50R399CPATMA1

LOW POWER_LEGACY

Infineon Technologies

3736 1.30
- +

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Немедленный

IPD50R399CPATMA1

Datenblatt

Tape & Reel (TR) * Not For New Designs - - - - - - - - - - - - - -
SIHP6N80E-GE3

SIHP6N80E-GE3

MOSFET N-CH 800V 5.4A TO220AB

Vishay Siliconix

3757 1.30
- +

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Немедленный

SIHP6N80E-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 940mOhm @ 3A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 827 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
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