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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AOB600A70FL

AOB600A70FL

MOSFET N-CH 700V 8.5A TO263

Alpha & Omega Semiconductor Inc.

2669 1.33
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Tape & Reel (TR),Cut Tape (CT) aMOS5™ Active N-Channel MOSFET (Metal Oxide) 700 V 8.5A (Tc) 10V 600mOhm @ 2.5A, 10V 4V @ 250µA 14.5 nC @ 10 V ±20V 900 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STI6N80K5

STI6N80K5

MOSFET N-CH 800V 4.5A I2PAK

STMicroelectronics

2086 1.33
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STI6N80K5

Datenblatt

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.6Ohm @ 2A, 10V 5V @ 100µA 7.5 nC @ 10 V 30V 255 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP20N60M2-EP

STP20N60M2-EP

MOSFET N-CHANNEL 600V 13A TO220

STMicroelectronics

2424 1.33
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Tube MDmesh™ M2-EP Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V - - - - - - 110W (Tc) - Through Hole
STD13N60M6

STD13N60M6

MOSFET N-CH 600V 10A DPAK

STMicroelectronics

3863 1.33
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Tape & Reel (TR) MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 380mOhm @ 5A, 10V 4.75V @ 250µA 13 nC @ 10 V ±25V 509 pF @ 100 V - 92W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP95N4F3

STP95N4F3

MOSFET N-CH 40V 80A TO220AB

STMicroelectronics

2042 1.33
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STP95N4F3

Datenblatt

Tube STripFET™ III Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 6.2mOhm @ 40A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 2200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOB480L

AOB480L

MOSFET N-CH 80V 15A/180A TO263

Alpha & Omega Semiconductor Inc.

3731 1.33
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AOB480L

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SDMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 15A (Ta), 180A (Tc) 7V, 10V 4.2mOhm @ 20A, 10V 4V @ 250µA 140 nC @ 10 V ±25V 7820 pF @ 40 V - 1.9W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2807STRRPBF

IRF2807STRRPBF

MOSFET N-CH 75V 82A D2PAK

Infineon Technologies

2620 1.33
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IRF2807STRRPBF

Datenblatt

Tape & Reel (TR) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 82A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3820 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK6A53D(STA4,Q,M)

TK6A53D(STA4,Q,M)

MOSFET N-CH 525V 6A TO220SIS

Toshiba Semiconductor and Storage

2974 1.33
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TK6A53D(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 525 V 6A (Ta) 10V 1.3Ohm @ 3A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK7A50D(STA4,Q,M)

TK7A50D(STA4,Q,M)

MOSFET N-CH 500V 7A TO220SIS

Toshiba Semiconductor and Storage

3010 1.33
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TK7A50D(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 7A (Ta) 10V 1.22Ohm @ 3.5A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
FCP260N65S3

FCP260N65S3

MOSFET N-CH 650V 12A TO220-3

onsemi

2127 1.33
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FCP260N65S3

Datenblatt

Tape & Reel (TR) SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 260mOhm @ 6A, 10V 4.5V @ 1.2mA 24 nC @ 10 V ±30V 1010 pF @ 400 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB80P04P407ATMA1

IPB80P04P407ATMA1

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies

3608 1.33
- +

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IPB80P04P407ATMA1

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 150µA 89 nC @ 10 V ±20V 6085 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80P04P4L06ATMA1

IPB80P04P4L06ATMA1

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies

3657 1.00
- +

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Немедленный

IPB80P04P4L06ATMA1

Datenblatt

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 6.4mOhm @ 80A, 10V 2.2V @ 150µA 104 nC @ 10 V ±16V 6580 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB70N12S311ATMA1

IPB70N12S311ATMA1

MOSFET N-CHANNEL_100+

Infineon Technologies

3461 1.00
- +

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Немедленный

IPB70N12S311ATMA1

Datenblatt

Tape & Reel (TR),Bulk * Not For New Designs - - - - - - - - - - - - - -
IPD90N04S3H4ATMA1

IPD90N04S3H4ATMA1

MOSFET N-CH 40V 90A TO252-3

Infineon Technologies

2335 1.00
- +

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Немедленный

IPD90N04S3H4ATMA1

Datenblatt

Tape & Reel (TR),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 4.3mOhm @ 90A, 10V 4V @ 65µA 60 nC @ 10 V ±20V 3900 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIE882DF-T1-GE3

SIE882DF-T1-GE3

MOSFET N-CH 25V 60A 10POLARPAK

Vishay Siliconix

3291 2.63
- +

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SIE882DF-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 25 V 60A (Tc) 4.5V, 10V 1.4mOhm @ 20A, 10V 2.2V @ 250µA 145 nC @ 10 V ±20V 6400 pF @ 12.5 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK5A90E,S4X

TK5A90E,S4X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

3450 1.29
- +

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Немедленный

TK5A90E,S4X

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 4.5A (Ta) 10V 3.1Ohm @ 2.3A, 10V 4V @ 450µA 20 nC @ 10 V ±30V 950 pF @ 25 V - 40W (Tc) 150°C Through Hole
AOI11S60

AOI11S60

MOSFET N-CH 600V 11A TO251A

Alpha & Omega Semiconductor Inc.

3377 1.34
- +

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Немедленный

AOI11S60

Datenblatt

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 399mOhm @ 3.8A, 10V 4.1V @ 250µA 11 nC @ 10 V ±30V 545 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB80P03P4L07ATMA2

IPB80P03P4L07ATMA2

MOSFET_(20V 40V) PG-TO263-3

Infineon Technologies

2535 1.31
- +

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Немедленный

IPB80P03P4L07ATMA2

Datenblatt

Tape & Reel (TR) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 6.9mOhm @ 80A, 10V 2V @ 130µA 80 nC @ 10 V +5V, -16V 5700 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1010NSTRRPBF

IRF1010NSTRRPBF

MOSFET N-CH 55V 85A D2PAK

Infineon Technologies

2545 1.34
- +

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Немедленный

IRF1010NSTRRPBF

Datenblatt

Tape & Reel (TR) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TPW2900ENH,L1Q

TPW2900ENH,L1Q

PB-F POWER MOSFET TRANSISTOR DSO

Toshiba Semiconductor and Storage

3119 1.31
- +

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Немедленный

TPW2900ENH,L1Q

Datenblatt

Tape & Reel (TR) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 200 V 33A (Tc) 10V 29mOhm @ 16.5A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 2200 pF @ 100 V - 800mW (Ta), 142W (Tc) 150°C Surface Mount
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