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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPD06N60C3ATMA1

SPD06N60C3ATMA1

MOSFET N-CH 600V 6.2A TO252-3

Infineon Technologies

2580 1.00
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SPD06N60C3ATMA1

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Tape & Reel (TR),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 750mOhm @ 3.9A, 10V 3.9V @ 260µA 31 nC @ 10 V ±20V 620 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOTF2142L

AOTF2142L

MOSFET N-CH 40V 112A TO220F

Alpha & Omega Semiconductor Inc.

2666 1.36
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AOTF2142L

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Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 112A (Tc) 4.5V, 10V 1.9mOhm @ 20A, 10V 2.3V @ 250µA 100 nC @ 10 V ±20V 8320 pF @ 20 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB80N04S306ATMA1

IPB80N04S306ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies

3588 1.00
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IPB80N04S306ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 5.4mOhm @ 80A, 10V 4V @ 52µA 47 nC @ 10 V ±20V 3250 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCPF1300N80ZYD

FCPF1300N80ZYD

MOSFET N-CH 800V 4A TO220F-3

onsemi

3942 1.36
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FCPF1300N80ZYD

Datenblatt

Tube SuperFET® II Last Time Buy N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.3Ohm @ 2A, 10V 4.5V @ 400µA 21 nC @ 10 V ±20V 880 pF @ 100 V - 24W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOWF11S65

AOWF11S65

MOSFET N-CH 650V 11A TO262F

Alpha & Omega Semiconductor Inc.

2948 1.36
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AOWF11S65

Datenblatt

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 399mOhm @ 5.5A, 10V 4V @ 250µA 13.2 nC @ 10 V ±30V 646 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFR8403TRL

AUIRFR8403TRL

MOSFET N-CH 40V 100A DPAK

Infineon Technologies

2913 1.36
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AUIRFR8403TRL

Datenblatt

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.1mOhm @ 76A, 10V 3.9V @ 100µA 99 nC @ 10 V ±20V 3171 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK560A60Y,S4X

TK560A60Y,S4X

MOSFET N-CH 600V 7A TO220SIS

Toshiba Semiconductor and Storage

3719 1.36
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TK560A60Y,S4X

Datenblatt

Tube DTMOSV Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 560mOhm @ 3.5A, 10V 4V @ 240µA 14.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W 150°C (TJ) Through Hole
IRF9Z24STRLPBF

IRF9Z24STRLPBF

MOSFET P-CH 60V 11A D2PAK

Vishay Siliconix

3858 1.36
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IRF9Z24STRLPBF

Datenblatt

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) 10V 280mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z24STRRPBF

IRF9Z24STRRPBF

MOSFET P-CH 60V 11A D2PAK

Vishay Siliconix

2132 1.36
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IRF9Z24STRRPBF

Datenblatt

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) 10V 280mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA060N06NXKSA1

IPA060N06NXKSA1

MOSFET N-CH 60V 45A TO220-FP

Infineon Technologies

12251 0.87
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IPA060N06NXKSA1

Datenblatt

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 6V, 10V 6mOhm @ 45A, 10V 3.3V @ 36µA 32 nC @ 10 V ±20V 2500 pF @ 30 V - 33W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHJ7N65E-T1-GE3

SIHJ7N65E-T1-GE3

MOSFET N-CH 650V 7.9A PPAK SO-8

Vishay Siliconix

3088 2.69
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SIHJ7N65E-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 7.9A (Tc) 10V 598mOhm @ 3.5A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 820 pF @ 100 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN0R9-30ULDX

PSMN0R9-30ULDX

MOSFET N-CH 30V 300A LFPAK56

Nexperia USA Inc.

3042 1.37
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PSMN0R9-30ULDX

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 300A (Ta) 4.5V, 10V 0.87mOhm @ 25A, 10V 2.2V @ 1mA 109 nC @ 10 V ±20V 7668 pF @ 15 V - 227W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK9Y1R9-40HX

BUK9Y1R9-40HX

BUK9Y1R9-40H/SOT669/LFPAK

Nexperia USA Inc.

3945 1.37
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BUK9Y1R9-40HX

Datenblatt

Tape & Reel (TR) - Active - - - 120A (Tj) - - - - - - - - - -
2SK3793-AZ

2SK3793-AZ

MOSFET N-CH 100V 12A TO220

Renesas Electronics America Inc

2600 1.37
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2SK3793-AZ

Datenblatt

Bulk - Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 4.5V, 10V 125mOhm @ 6A, 10V - 21 nC @ 10 V ±20V 900 pF @ 10 V - 2W (Ta), 20W (Tc) 150°C (TJ) Through Hole
STD95NH02LT4

STD95NH02LT4

MOSFET N-CH 24V 80A DPAK

STMicroelectronics

3051 1.37
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STD95NH02LT4

Datenblatt

Tape & Reel (TR),Cut Tape (CT) STripFET™ Obsolete N-Channel MOSFET (Metal Oxide) 24 V 80A (Tc) 5V, 10V 5mOhm @ 40A, 10V 1V @ 250µA 17 nC @ 5 V ±20V 2070 pF @ 15 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMT4003SCT

DMT4003SCT

MOSFET N-CH 40V 205A TO220AB

Diodes Incorporated

3164 1.37
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DMT4003SCT

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 205A (Tc) 10V 3mOhm @ 90A, 10V 4V @ 250µA 75.6 nC @ 10 V ±20V 6865 pF @ 20 V - 156W -55°C ~ 150°C (TJ) Through Hole
TN0620N3-G-P014

TN0620N3-G-P014

MOSFET N-CH 200V 250MA TO92-3

Microchip Technology

2022 1.38
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TN0620N3-G-P014

Datenblatt

Tape & Box (TB) - Active N-Channel MOSFET (Metal Oxide) 200 V 250mA (Tj) 5V, 10V 6Ohm @ 500mA, 10V 1.6V @ 1mA - ±20V 150 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB042N10NF2SATMA1

IPB042N10NF2SATMA1

TRENCH >=100V

Infineon Technologies

2616 1.38
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Tape & Reel (TR) * Active - - - - - - - - - - - - - -
AOTF9N90

AOTF9N90

MOSFET N-CH 900V 9A TO220-3F

Alpha & Omega Semiconductor Inc.

3016 1.38
- +

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AOTF9N90

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 9A (Tc) 10V 1.3Ohm @ 4.5A, 10V 4.5V @ 250µA 58 nC @ 10 V ±30V 2560 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA65R660CFDXKSA2

IPA65R660CFDXKSA2

MOSFET N-CH 700V 6A TO220

Infineon Technologies

3232 1.34
- +

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IPA65R660CFDXKSA2

Datenblatt

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 700 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 27.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
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