Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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SPD06N60C3ATMA1MOSFET N-CH 600V 6.2A TO252-3 |
2580 | 1.00 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Bulk | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 750mOhm @ 3.9A, 10V | 3.9V @ 260µA | 31 nC @ 10 V | ±20V | 620 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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AOTF2142LMOSFET N-CH 40V 112A TO220F |
2666 | 1.36 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 112A (Tc) | 4.5V, 10V | 1.9mOhm @ 20A, 10V | 2.3V @ 250µA | 100 nC @ 10 V | ±20V | 8320 pF @ 20 V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPB80N04S306ATMA1MOSFET N-CH 40V 80A TO263-3 |
3588 | 1.00 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 5.4mOhm @ 80A, 10V | 4V @ 52µA | 47 nC @ 10 V | ±20V | 3250 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FCPF1300N80ZYDMOSFET N-CH 800V 4A TO220F-3 |
3942 | 1.36 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | SuperFET® II | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 1.3Ohm @ 2A, 10V | 4.5V @ 400µA | 21 nC @ 10 V | ±20V | 880 pF @ 100 V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AOWF11S65MOSFET N-CH 650V 11A TO262F |
2948 | 1.36 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | aMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 399mOhm @ 5.5A, 10V | 4V @ 250µA | 13.2 nC @ 10 V | ±30V | 646 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AUIRFR8403TRLMOSFET N-CH 40V 100A DPAK |
2913 | 1.36 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.1mOhm @ 76A, 10V | 3.9V @ 100µA | 99 nC @ 10 V | ±20V | 3171 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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TK560A60Y,S4XMOSFET N-CH 600V 7A TO220SIS |
3719 | 1.36 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | DTMOSV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 30W | 150°C (TJ) | Through Hole |
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IRF9Z24STRLPBFMOSFET P-CH 60V 11A D2PAK |
3858 | 1.36 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Tc) | 10V | 280mOhm @ 6.6A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 570 pF @ 25 V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRF9Z24STRRPBFMOSFET P-CH 60V 11A D2PAK |
2132 | 1.36 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Tc) | 10V | 280mOhm @ 6.6A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 570 pF @ 25 V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPA060N06NXKSA1MOSFET N-CH 60V 45A TO220-FP |
12251 | 0.87 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 6V, 10V | 6mOhm @ 45A, 10V | 3.3V @ 36µA | 32 nC @ 10 V | ±20V | 2500 pF @ 30 V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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SIHJ7N65E-T1-GE3MOSFET N-CH 650V 7.9A PPAK SO-8 |
3088 | 2.69 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.9A (Tc) | 10V | 598mOhm @ 3.5A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±30V | 820 pF @ 100 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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PSMN0R9-30ULDXMOSFET N-CH 30V 300A LFPAK56 |
3042 | 1.37 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 300A (Ta) | 4.5V, 10V | 0.87mOhm @ 25A, 10V | 2.2V @ 1mA | 109 nC @ 10 V | ±20V | 7668 pF @ 15 V | - | 227W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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BUK9Y1R9-40HXBUK9Y1R9-40H/SOT669/LFPAK |
3945 | 1.37 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | - | Active | - | - | - | 120A (Tj) | - | - | - | - | - | - | - | - | - | - |
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2SK3793-AZMOSFET N-CH 100V 12A TO220 |
2600 | 1.37 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk | - | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 4.5V, 10V | 125mOhm @ 6A, 10V | - | 21 nC @ 10 V | ±20V | 900 pF @ 10 V | - | 2W (Ta), 20W (Tc) | 150°C (TJ) | Through Hole |
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STD95NH02LT4MOSFET N-CH 24V 80A DPAK |
3051 | 1.37 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | STripFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24 V | 80A (Tc) | 5V, 10V | 5mOhm @ 40A, 10V | 1V @ 250µA | 17 nC @ 5 V | ±20V | 2070 pF @ 15 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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DMT4003SCTMOSFET N-CH 40V 205A TO220AB |
3164 | 1.37 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 205A (Tc) | 10V | 3mOhm @ 90A, 10V | 4V @ 250µA | 75.6 nC @ 10 V | ±20V | 6865 pF @ 20 V | - | 156W | -55°C ~ 150°C (TJ) | Through Hole |
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TN0620N3-G-P014MOSFET N-CH 200V 250MA TO92-3 |
2022 | 1.38 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Box (TB) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 250mA (Tj) | 5V, 10V | 6Ohm @ 500mA, 10V | 1.6V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPB042N10NF2SATMA1TRENCH >=100V |
2616 | 1.38 |
ДобавитьНемедленный |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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AOTF9N90MOSFET N-CH 900V 9A TO220-3F |
3016 | 1.38 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 9A (Tc) | 10V | 1.3Ohm @ 4.5A, 10V | 4.5V @ 250µA | 58 nC @ 10 V | ±30V | 2560 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPA65R660CFDXKSA2MOSFET N-CH 700V 6A TO220 |
3232 | 1.34 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | CoolMOS™ CFD2 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 6A (Tc) | 10V | 660mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22 nC @ 10 V | ±20V | 615 pF @ 100 V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |