Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IPA65R660CFDXKSA1MOSFET N-CH 650V 6A TO220 |
500 | 0.89 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 660mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22 nC @ 10 V | ±20V | 615 pF @ 100 V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
DMT30M9LPS-13MOSFET BVDSS: 25V-30V POWERDI506 |
3968 | 1.37 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 1mOhm @ 25A, 10V | 3V @ 250µA | 160.5 nC @ 10 V | ±20V | 12121 pF @ 20 V | - | 2.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
AOB411LMOSFET P-CH 60V 8A/78A TO263 |
2690 | 1.41 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Ta), 78A (Tc) | 4.5V, 10V | 16.5mOhm @ 20A, 10V | 2.5V @ 250µA | 100 nC @ 10 V | ±20V | 6400 pF @ 30 V | - | 2.1W (Ta), 187W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IPI80N04S403AKSA1MOSFET N-CH 40V 80A TO262-3 |
3547 | 1.00 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 53µA | 66 nC @ 10 V | ±20V | 5260 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IPP530N15N3GXKSA1MOSFET N-CH 150V 21A TO220-3 |
500 | 2.37 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | OptiMOS™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Tc) | 8V, 10V | 53mOhm @ 18A, 10V | 4V @ 35µA | 12 nC @ 10 V | ±20V | 887 pF @ 75 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
TSM70NB1R4CP ROGMOSFET N-CHANNEL 700V 3A TO252 |
3664 | 1.41 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 3A (Tc) | 10V | 1.4Ohm @ 1.2A, 10V | 4V @ 250µA | 7.4 nC @ 10 V | ±30V | 317 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
VN3205N3-G-P002MOSFET N-CH 50V 1.2A TO92-3 |
3681 | 1.41 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 1.2A (Tj) | 4.5V, 10V | 300mOhm @ 3A, 10V | 2.4V @ 10mA | - | ±20V | 300 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
AOT22N50LMOSFET N-CH 500V 22A TO220 |
3411 | 1.41 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 260mOhm @ 11A, 10V | 4.5V @ 250µA | 83 nC @ 10 V | ±30V | 3710 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
AUIRFR3504ZTRLMOSFET N-CH 40V 42A DPAK |
2013 | 1.41 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | - | 9mOhm @ 42A, 10V | 4V @ 250µA | 45 nC @ 10 V | - | 1510 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
TK5A65DA(STA4,Q,M)MOSFET N-CH 650V 4.5A TO220SIS |
3833 | 1.41 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4.5A (Ta) | 10V | 1.67Ohm @ 2.3A, 10V | 4.4V @ 1mA | 16 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | Through Hole |
|
STP40NF12MOSFET N-CH 120V 40A TO220AB |
3126 | 1.41 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | STripFET™ II | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 120 V | 40A (Tc) | 10V | 32mOhm @ 20A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 1880 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IRF9620SPBFMOSFET P-CH 200V 3.5A D2PAK |
2132 | 1.42 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 3.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
SI4413ADY-T1-GE3MOSFET P-CH 30V 10.5A 8SO |
3282 | 1.42 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 10.5A (Ta) | 4.5V, 10V | 7.5mOhm @ 13A, 10V | 3V @ 250µA | 95 nC @ 5 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
SI4423DY-T1-GE3MOSFET P-CH 20V 10A 8SO |
2012 | 1.42 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 10A (Ta) | 1.8V, 4.5V | 7.5mOhm @ 14A, 4.5V | 900mV @ 600µA | 175 nC @ 5 V | ±8V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
SI7390DP-T1-E3MOSFET N-CH 30V 9A PPAK SO-8 |
2215 | 1.42 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4.5V, 10V | 9.5mOhm @ 15A, 10V | 3V @ 250µA | 15 nC @ 4.5 V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
SI7390DP-T1-GE3MOSFET N-CH 30V 9A PPAK SO-8 |
3037 | 1.42 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4.5V, 10V | 9.5mOhm @ 15A, 10V | 3V @ 250µA | 15 nC @ 4.5 V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
SIJH440E-T1-GE3MOSFET N-CH 40V 200A PPAK 8 X 8 |
2541 | 1.42 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 4.5V, 10V | 0.96mOhm @ 20A, 10V | 2.3V @ 250µA | 195 nC @ 4.5 V | +20V, -16V | 20330 pF @ 20 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
TK7A55D(STA4,Q,M)MOSFET N-CH 550V 7A TO220SIS |
3596 | 1.42 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 7A (Ta) | 10V | 1.25Ohm @ 3.5A, 10V | 4.4V @ 1mA | 16 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | Through Hole |
![]() |
TK5A65W,S5XMOSFET N-CH 650V 5.2A TO220SIS |
2356 | 1.42 |
ДобавитьНемедленный |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 5.2A (Ta) | 10V | 1.2Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | Through Hole | |
![]() |
FQP10N20CMOSFET N-CH 200V 9.5A TO220-3 |
2158 | 1.42 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.5A (Tc) | 10V | 360mOhm @ 4.75A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±30V | 510 pF @ 25 V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |