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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPA65R660CFDXKSA1

IPA65R660CFDXKSA1

MOSFET N-CH 650V 6A TO220

Infineon Technologies

500 0.89
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IPA65R660CFDXKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 27.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
DMT30M9LPS-13

DMT30M9LPS-13

MOSFET BVDSS: 25V-30V POWERDI506

Diodes Incorporated

3968 1.37
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DMT30M9LPS-13

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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 1mOhm @ 25A, 10V 3V @ 250µA 160.5 nC @ 10 V ±20V 12121 pF @ 20 V - 2.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AOB411L

AOB411L

MOSFET P-CH 60V 8A/78A TO263

Alpha & Omega Semiconductor Inc.

2690 1.41
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AOB411L

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Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 8A (Ta), 78A (Tc) 4.5V, 10V 16.5mOhm @ 20A, 10V 2.5V @ 250µA 100 nC @ 10 V ±20V 6400 pF @ 30 V - 2.1W (Ta), 187W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI80N04S403AKSA1

IPI80N04S403AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies

3547 1.00
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IPI80N04S403AKSA1

Datenblatt

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 53µA 66 nC @ 10 V ±20V 5260 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP530N15N3GXKSA1

IPP530N15N3GXKSA1

MOSFET N-CH 150V 21A TO220-3

Infineon Technologies

500 2.37
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IPP530N15N3GXKSA1

Datenblatt

Tube OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 8V, 10V 53mOhm @ 18A, 10V 4V @ 35µA 12 nC @ 10 V ±20V 887 pF @ 75 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
TSM70NB1R4CP ROG

TSM70NB1R4CP ROG

MOSFET N-CHANNEL 700V 3A TO252

Taiwan Semiconductor Corporation

3664 1.41
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TSM70NB1R4CP ROG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 700 V 3A (Tc) 10V 1.4Ohm @ 1.2A, 10V 4V @ 250µA 7.4 nC @ 10 V ±30V 317 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
VN3205N3-G-P002

VN3205N3-G-P002

MOSFET N-CH 50V 1.2A TO92-3

Microchip Technology

3681 1.41
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VN3205N3-G-P002

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 50 V 1.2A (Tj) 4.5V, 10V 300mOhm @ 3A, 10V 2.4V @ 10mA - ±20V 300 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT22N50L

AOT22N50L

MOSFET N-CH 500V 22A TO220

Alpha & Omega Semiconductor Inc.

3411 1.41
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AOT22N50L

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 260mOhm @ 11A, 10V 4.5V @ 250µA 83 nC @ 10 V ±30V 3710 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFR3504ZTRL

AUIRFR3504ZTRL

MOSFET N-CH 40V 42A DPAK

Infineon Technologies

2013 1.41
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AUIRFR3504ZTRL

Datenblatt

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) - 9mOhm @ 42A, 10V 4V @ 250µA 45 nC @ 10 V - 1510 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK5A65DA(STA4,Q,M)

TK5A65DA(STA4,Q,M)

MOSFET N-CH 650V 4.5A TO220SIS

Toshiba Semiconductor and Storage

3833 1.41
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TK5A65DA(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Ta) 10V 1.67Ohm @ 2.3A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
STP40NF12

STP40NF12

MOSFET N-CH 120V 40A TO220AB

STMicroelectronics

3126 1.41
- +

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STP40NF12

Datenblatt

Tube STripFET™ II Last Time Buy N-Channel MOSFET (Metal Oxide) 120 V 40A (Tc) 10V 32mOhm @ 20A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 1880 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9620SPBF

IRF9620SPBF

MOSFET P-CH 200V 3.5A D2PAK

Vishay Siliconix

2132 1.42
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IRF9620SPBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4413ADY-T1-GE3

SI4413ADY-T1-GE3

MOSFET P-CH 30V 10.5A 8SO

Vishay Siliconix

3282 1.42
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SI4413ADY-T1-GE3

Datenblatt

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 10.5A (Ta) 4.5V, 10V 7.5mOhm @ 13A, 10V 3V @ 250µA 95 nC @ 5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4423DY-T1-GE3

SI4423DY-T1-GE3

MOSFET P-CH 20V 10A 8SO

Vishay Siliconix

2012 1.42
- +

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SI4423DY-T1-GE3

Datenblatt

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 1.8V, 4.5V 7.5mOhm @ 14A, 4.5V 900mV @ 600µA 175 nC @ 5 V ±8V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7390DP-T1-E3

SI7390DP-T1-E3

MOSFET N-CH 30V 9A PPAK SO-8

Vishay Siliconix

2215 1.42
- +

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SI7390DP-T1-E3

Datenblatt

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 9.5mOhm @ 15A, 10V 3V @ 250µA 15 nC @ 4.5 V ±20V - - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7390DP-T1-GE3

SI7390DP-T1-GE3

MOSFET N-CH 30V 9A PPAK SO-8

Vishay Siliconix

3037 1.42
- +

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Немедленный

SI7390DP-T1-GE3

Datenblatt

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 9.5mOhm @ 15A, 10V 3V @ 250µA 15 nC @ 4.5 V ±20V - - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIJH440E-T1-GE3

SIJH440E-T1-GE3

MOSFET N-CH 40V 200A PPAK 8 X 8

Vishay Siliconix

2541 1.42
- +

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SIJH440E-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 4.5V, 10V 0.96mOhm @ 20A, 10V 2.3V @ 250µA 195 nC @ 4.5 V +20V, -16V 20330 pF @ 20 V - 158W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK7A55D(STA4,Q,M)

TK7A55D(STA4,Q,M)

MOSFET N-CH 550V 7A TO220SIS

Toshiba Semiconductor and Storage

3596 1.42
- +

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TK7A55D(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 7A (Ta) 10V 1.25Ohm @ 3.5A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK5A65W,S5X

TK5A65W,S5X

MOSFET N-CH 650V 5.2A TO220SIS

Toshiba Semiconductor and Storage

2356 1.42
- +

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Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 5.2A (Ta) 10V 1.2Ohm @ 2.6A, 10V 3.5V @ 170µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
FQP10N20C

FQP10N20C

MOSFET N-CH 200V 9.5A TO220-3

onsemi

2158 1.42
- +

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Немедленный

FQP10N20C

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) 10V 360mOhm @ 4.75A, 10V 4V @ 250µA 26 nC @ 10 V ±30V 510 pF @ 25 V - 72W (Tc) -55°C ~ 150°C (TJ) Through Hole
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