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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TPW5200FNH,L1Q

TPW5200FNH,L1Q

PB-F POWER MOSFET TRANSISTOR DSO

Toshiba Semiconductor and Storage

3962 1.31
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TPW5200FNH,L1Q

Datenblatt

Tape & Reel (TR) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 250 V 26A (Tc) 10V 52mOhm @ 13A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 2200 pF @ 100 V - 800mW (Ta), 142W (Tc) 150°C Surface Mount
TPW1500CNH,L1Q

TPW1500CNH,L1Q

PB-F POWER MOSFET TRANSISTOR DSO

Toshiba Semiconductor and Storage

2450 1.31
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TPW1500CNH,L1Q

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Tape & Reel (TR) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 150 V 38A (Tc) 10V 15.4mOhm @ 19A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 2200 pF @ 75 V - 800mW (Ta), 142W (Tc) 150°C Surface Mount
AOT264L

AOT264L

MOSFET N-CH 60V 19A/140A TO220

Alpha & Omega Semiconductor Inc.

2364 1.34
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AOT264L

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Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 19A (Ta), 140A (Tc) 6V, 10V 3.2mOhm @ 20A, 10V 3.2V @ 250µA 94 nC @ 10 V ±20V 8400 pF @ 30 V - 2.1W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOT482L

AOT482L

MOSFET N-CH 80V 11A/105A TO220

Alpha & Omega Semiconductor Inc.

2473 1.34
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AOT482L

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Tube SDMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 80 V 11A (Ta), 105A (Tc) 7V, 10V 7.2mOhm @ 20A, 10V 3.7V @ 250µA 81 nC @ 10 V ±25V 4870 pF @ 40 V - 2.1W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP033N04NF2SAKMA1

IPP033N04NF2SAKMA1

TRENCH PG-TO220-3

Infineon Technologies

3271 1.34
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Tube * Active - - - - - - - - - - - - - -
NVMFS5C430NLWFAFT1G

NVMFS5C430NLWFAFT1G

MOSFET N-CH 40V 38A/200A 5DFN

onsemi

2935 1.35
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NVMFS5C430NLWFAFT1G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 38A (Ta), 200A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V 2V @ 250µA 70 nC @ 10 V ±20V 4300 pF @ 20 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQI7N60TU

FQI7N60TU

MOSFET N-CH 600V 7.4A I2PAK

onsemi

3568 1.18
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FQI7N60TU

Datenblatt

Bulk,Tube,Tube QFET® Active N-Channel MOSFET (Metal Oxide) 600 V 7.4A (Tc) 10V 1Ohm @ 3.7A, 10V 5V @ 250µA 38 nC @ 10 V ±30V 1430 pF @ 25 V - 3.13W (Ta), 142W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS004N08C

FDMS004N08C

MOSFET N-CH 80V 126A 8PQFN

onsemi

2865 1.35
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FDMS004N08C

Datenblatt

Tape & Reel (TR) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 126A (Tc) 6V, 10V 4mOhm @ 44A, 10V 4V @ 250µA 55 nC @ 10 V ±20V 4250 pF @ 40 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9520STRRPBF

IRF9520STRRPBF

MOSFET P-CH 100V 6.8A D2PAK

Vishay Siliconix

3516 1.35
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IRF9520STRRPBF

Datenblatt

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 600mOhm @ 4.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK20G60W,RVQ

TK20G60W,RVQ

MOSFET N CH 600V 20A D2PAK

Toshiba Semiconductor and Storage

2989 1.35
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TK20G60W,RVQ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V Super Junction 165W (Tc) 150°C (TJ) Surface Mount
AOTF22N50L

AOTF22N50L

MOSFET N-CH 500V 22A TO220-3F

Alpha & Omega Semiconductor Inc.

2395 1.35
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AOTF22N50L

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 260mOhm @ 11A, 10V 4.5V @ 250µA 83 nC @ 10 V ±30V 3710 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
IAUC100N08S5N034ATMA1

IAUC100N08S5N034ATMA1

MOSFET_(75V 120V( PG-TDSON-8

Infineon Technologies

3008 1.32
- +

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IAUC100N08S5N034ATMA1

Datenblatt

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 132A (Tj) 6V, 10V 3.4mOhm @ 50A, 10V 3.8V @ 78µA 66 nC @ 10 V ±20V 4559 pF @ 40 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFD6H840NLT1G

NTMFD6H840NLT1G

T8 80V LL SO8FL DS

onsemi

3856 1.35
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NTMFD6H840NLT1G

Datenblatt

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
SKI04033

SKI04033

MOSFET N-CH 40V 80A TO263

Sanken

3635 1.35
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SKI04033

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 3.8mOhm @ 58.5A, 10V 2.5V @ 1mA 63.2 nC @ 10 V ±20V 3910 pF @ 25 V - 116W (Tc) 150°C (TJ) Surface Mount
TK3A65DA(STA4,QM)

TK3A65DA(STA4,QM)

MOSFET N-CH 650V 2.5A TO220SIS

Toshiba Semiconductor and Storage

2257 1.36
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TK3A65DA(STA4,QM)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 2.5A (Ta) 10V 2.51Ohm @ 1.3A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
STB11N65M5

STB11N65M5

MOSFET N CH 650V 9A D2PAK

STMicroelectronics

3714 1.36
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STB11N65M5

Datenblatt

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 480mOhm @ 4.5A, 10V 5V @ 250µA 17 nC @ 10 V ±25V 644 pF @ 100 V - 85W (Tc) 150°C (TJ) Surface Mount
AOW11S65

AOW11S65

MOSFET N-CH 650V 11A TO262

Alpha & Omega Semiconductor Inc.

3802 1.36
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AOW11S65

Datenblatt

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 399mOhm @ 5.5A, 10V 4V @ 250µA 13.2 nC @ 10 V ±30V 646 pF @ 100 V - 198W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIDR402DP-T1-GE3

SIDR402DP-T1-GE3

MOSFET N-CH 40V 64.6A/100A PPAK

Vishay Siliconix

3869 1.36
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SIDR402DP-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 64.6A (Ta), 100A (Tc) 4.5V, 10V 0.88mOhm @ 20A, 10V 2.3V @ 250µA 165 nC @ 10 V +20V, -16V 9100 pF @ 20 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB77N06S212ATMA2

IPB77N06S212ATMA2

MOSFET N-CH 55V 77A TO263-3

Infineon Technologies

3937 1.36
- +

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Немедленный

IPB77N06S212ATMA2

Datenblatt

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 77A (Tc) 10V 11.7mOhm @ 38A, 10V 4V @ 93µA 60 nC @ 10 V ±20V 1770 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N06S2L11ATMA2

IPB80N06S2L11ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

2078 1.00
- +

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Немедленный

IPB80N06S2L11ATMA2

Datenblatt

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 10.7mOhm @ 40A, 10V 2V @ 93µA 80 nC @ 10 V ±20V 2075 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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