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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFN90N170SK

IXFN90N170SK

SICFET N-CH 1700V 90A SOT227B

IXYS

2661 347.44
- +

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Tube - Active N-Channel SiCFET (Silicon Carbide) 1700 V 90A (Tc) 20V 35mOhm @ 100A, 20V 4V @ 36mA 376 nC @ 20 V +20V, -5V 7340 pF @ 1000 V - - -40°C ~ 150°C (TJ) Chassis Mount
VMO550-01F

VMO550-01F

MOSFET N-CH 100V 590A Y3-DCB

IXYS

3363 366.29
- +

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VMO550-01F

Datenblatt

Bulk HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 590A (Tc) 10V 2.1mOhm @ 500mA, 10V 6V @ 110mA 2000 nC @ 10 V ±20V 50000 pF @ 25 V - 2200W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
SSM6K781G,LF

SSM6K781G,LF

MOSFET N-CH 12V 7A 6WCSP6C

Toshiba Semiconductor and Storage

500 0.19
- +

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SSM6K781G,LF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 12 V 7A (Ta) 1.5V, 4.5V 18mOhm @ 1.5A, 4.5V 1V @ 250µA 5.4 nC @ 4.5 V ±8V 600 pF @ 6 V - 1.6W (Ta) 150°C (TJ) Surface Mount
PMF170XP,115

PMF170XP,115

MOSFET P-CH 20V 1A SOT323

Nexperia USA Inc.

468 0.42
- +

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PMF170XP,115

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 4.5V 200mOhm @ 1A, 4.5V 1.15V @ 250µA 3.9 nC @ 4.5 V ±12V 280 pF @ 10 V - 290mW (Ta), 1.67W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMP2130LDM-7

DMP2130LDM-7

MOSFET P-CH 20V 3.4A SOT-26

Diodes Incorporated

115 0.42
- +

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DMP2130LDM-7

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 3.4A (Ta) 2.5V, 4.5V 80mOhm @ 4.5A, 4.5V 1.25V @ 250µA 7.3 nC @ 4.5 V ±12V 443 pF @ 16 V - 1.25W -55°C ~ 150°C (TJ) Surface Mount
AO3406

AO3406

MOSFET N-CH 30V 3.6A SOT23-3L

Alpha & Omega Semiconductor Inc.

12355 0.43
- +

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AO3406

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 50mOhm @ 3.6A, 10V 2.5V @ 250µA 5 nC @ 10 V ±20V 210 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2312-TP

SI2312-TP

MOSFET N-CH 20V 5A SOT23

Micro Commercial Co

680 0.43
- +

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SI2312-TP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 4.5V 41mOhm @ 4.3A, 1.8V 1V @ 250µA - ±8V 865 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
MTM761230LBF

MTM761230LBF

MOSFET P-CH 20V 3A WSMINI6

Panasonic Electronic Components

429 0.49
- +

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MTM761230LBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4V 55mOhm @ 1A, 4V 1.3V @ 1mA - ±10V 1000 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
NTGS3441T1G

NTGS3441T1G

MOSFET P-CH 20V 1.65A 6TSOP

onsemi

321 0.49
- +

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NTGS3441T1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 1.65A (Ta) 2.5V, 4.5V 90mOhm @ 3.3A, 4.5V 1.5V @ 250µA 14 nC @ 4.5 V ±8V 480 pF @ 5 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP2045U-13

DMP2045U-13

MOSFET P-CH 20V 4.3A SOT23

Diodes Incorporated

2561 0.50
- +

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DMP2045U-13

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 4.3A (Ta) 1.8V, 4.5V 45mOhm @ 4A, 4.5V 1V @ 250µA 6.8 nC @ 4.5 V ±8V 634 pF @ 10 V - 800mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
RTM002P02T2L

RTM002P02T2L

MOSFET P-CH 20V 200MA VMT3

Rohm Semiconductor

832 0.50
- +

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RTM002P02T2L

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 200mA (Ta) 2.5V, 4.5V 1.5Ohm @ 200mA, 4.5V 2V @ 1mA - ±12V 50 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
TPIC5424LDW

TPIC5424LDW

N-CHANNEL POWER MOSFET

Texas Instruments

600 1.87
- +

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TPIC5424LDW

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRFP351

IRFP351

N-CHANNEL POWER MOSFET

Harris Corporation

323 1.87
- +

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Немедленный

IRFP351

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 16A (Tc) 10V 300mOhm @ 8.9A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
TPIC5621LDW

TPIC5621LDW

N-CHANNEL POWER MOSFET

Texas Instruments

290 1.87
- +

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Немедленный

TPIC5621LDW

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRFP251

IRFP251

N-CHANNEL POWER MOSFET

Harris Corporation

265 1.87
- +

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Немедленный

IRFP251

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 85mOhm @ 17A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP50R199CPXK

IPP50R199CPXK

N-CHANNEL POWER MOSFET

Infineon Technologies

217 1.87
- +

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Немедленный

IPP50R199CPXK

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
2SJ471-E

2SJ471-E

POWER MOSFET

Renesas Electronics America Inc

258 1.88
- +

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Немедленный

2SJ471-E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRFF9221

IRFF9221

MOSFET N-CH 150V 2.5A TO205AF

International Rectifier

194 1.89
- +

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Немедленный

IRFF9221

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 2.5A (Tc) - - - - - - - 20W - Through Hole
IXFA14N60P

IXFA14N60P

MOSFET N-CH 600V 14A TO263

IXYS

2716 5.11
- +

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Немедленный

IXFA14N60P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 550mOhm @ 7A, 10V 5.5V @ 2.5mA 36 nC @ 10 V ±30V 2500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6520KNXC7G

R6520KNXC7G

650V 20A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

999 5.14
- +

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Немедленный

R6520KNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Ta) 10V 205mOhm @ 9.5A, 10V 5V @ 630µA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 68W (Tc) 150°C (TJ) Through Hole
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