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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTA12N50P

IXTA12N50P

MOSFET N-CH 500V 12A TO263

IXYS

3444 3.98
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IXTA12N50P

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Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 500mOhm @ 6A, 10V 5.5V @ 250µA 29 nC @ 10 V ±30V 1830 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP220N04T2

IXTP220N04T2

MOSFET N-CH 40V 220A TO220AB

IXYS

2511 3.98
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IXTP220N04T2

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Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 220A (Tc) 10V 3.5mOhm @ 50A, 10V 4V @ 250µA 112 nC @ 10 V ±20V 6820 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPI15N65C3

SPI15N65C3

N-CHANNEL POWER MOSFET

Infineon Technologies

400 1.66
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SPI15N65C3

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Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1600 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF10N80

FQAF10N80

MOSFET N-CH 800V 6.7A TO3PF

Fairchild Semiconductor

7549 1.67
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FQAF10N80

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 6.7A (Tc) 10V 1.05Ohm @ 3.35A, 10V 5V @ 250µA 71 nC @ 10 V ±30V 2700 pF @ 25 V - 113W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6515KNXC7G

R6515KNXC7G

650V 15A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

1000 4.02
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R6515KNXC7G

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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 315mOhm @ 6.5A, 10V 5V @ 430µA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
R6015ENXC7G

R6015ENXC7G

600V 15A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

1000 4.02
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R6015ENXC7G

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 290mOhm @ 6.5A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 910 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
R6515ENXC7G

R6515ENXC7G

650V 15A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

1000 4.02
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R6515ENXC7G

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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 315mOhm @ 6.5A, 10V 4V @ 430µA 40 nC @ 10 V ±20V 910 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
R6015KNXC7G

R6015KNXC7G

600V 15A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

999 4.02
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R6015KNXC7G

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 6.5A, 10V 5V @ 1mA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
FQA8N90C

FQA8N90C

MOSFET N-CH 900V 8A TO3P

Fairchild Semiconductor

3483 1.67
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FQA8N90C

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 8A (Tc) 10V 1.9Ohm @ 4A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 2080 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
UPA1572BH(1)-AZ

UPA1572BH(1)-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

2018 1.67
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FQAF8N80

FQAF8N80

MOSFET N-CH 800V 5.9A TO3PF

Fairchild Semiconductor

557 1.67
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FQAF8N80

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5.9A (Tc) 10V 1.2Ohm @ 2.95A, 10V 5V @ 250µA 57 nC @ 10 V ±30V 2350 pF @ 25 V - 107W (Tc) -55°C ~ 150°C (TJ) Through Hole
NP90N04VDG-E1-AY

NP90N04VDG-E1-AY

MOSFET N-CH 40V 90A TO252

Renesas Electronics America Inc

2500 1.68
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NP90N04VDG-E1-AY

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Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) - 4mOhm @ 45A, 10V 2.5V @ 250µA 135 nC @ 10 V - 6900 pF @ 25 V - 1.2W (Ta), 105W (Tc) 175°C (TJ) Surface Mount
NP90N04VLG-E1-AY

NP90N04VLG-E1-AY

MOSFET N-CH 40V 90A TO252

Renesas Electronics America Inc

2500 1.68
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NP90N04VLG-E1-AY

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Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) - 4mOhm @ 45A, 10V 2.5V @ 250µA 135 nC @ 10 V - 6900 pF @ 25 V - 1.2W (Ta), 105W (Tc) 175°C (TJ) Surface Mount
FDMS2506SDC

FDMS2506SDC

MOSFET N-CH 25V 39A/49A DLCOOL56

Fairchild Semiconductor

3205 1.70
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FDMS2506SDC

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Bulk Dual Cool™, PowerTrench®, SyncFET™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 39A (Ta), 49A (Tc) 4.5V, 10V 1.45mOhm @ 30A, 10V 3V @ 1mA 93 nC @ 10 V ±20V 5945 pF @ 13 V - 3.3W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UPA2715GR-E1-AT

UPA2715GR-E1-AT

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

9739 1.71
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HUF76443P3

HUF76443P3

MOSFET N-CH 60V 75A TO220-3

Fairchild Semiconductor

7300 1.71
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HUF76443P3

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Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 8mOhm @ 75A, 10V 3V @ 250µA 129 nC @ 10 V ±16V 4115 pF @ 25 V - 260W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK3322(1)-ZK-E2-AZ

2SK3322(1)-ZK-E2-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

6400 1.71
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UPA2746UT1A-E2-AY

UPA2746UT1A-E2-AY

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

6000 1.71
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FS3KM-9A#B00

FS3KM-9A#B00

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

3399 1.71
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RJK03C5DPA-WS#J5A

RJK03C5DPA-WS#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

2900 1.71
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