Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXTA12N50PMOSFET N-CH 500V 12A TO263 |
3444 | 3.98 |
ДобавитьНемедленный |
Datenblatt |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 500mOhm @ 6A, 10V | 5.5V @ 250µA | 29 nC @ 10 V | ±30V | 1830 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IXTP220N04T2MOSFET N-CH 40V 220A TO220AB |
2511 | 3.98 |
ДобавитьНемедленный |
Datenblatt |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 220A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 4V @ 250µA | 112 nC @ 10 V | ±20V | 6820 pF @ 25 V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
SPI15N65C3N-CHANNEL POWER MOSFET |
400 | 1.66 |
ДобавитьНемедленный |
Datenblatt |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63 nC @ 10 V | ±20V | 1600 pF @ 25 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FQAF10N80MOSFET N-CH 800V 6.7A TO3PF |
7549 | 1.67 |
ДобавитьНемедленный |
Datenblatt |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 6.7A (Tc) | 10V | 1.05Ohm @ 3.35A, 10V | 5V @ 250µA | 71 nC @ 10 V | ±30V | 2700 pF @ 25 V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
R6515KNXC7G650V 15A TO-220FM, HIGH-SPEED SW |
1000 | 4.02 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Ta) | 10V | 315mOhm @ 6.5A, 10V | 5V @ 430µA | 27.5 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 60W (Tc) | 150°C (TJ) | Through Hole | |
R6015ENXC7G600V 15A TO-220FM, LOW-NOISE POW |
1000 | 4.02 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Ta) | 10V | 290mOhm @ 6.5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±20V | 910 pF @ 25 V | - | 60W (Tc) | 150°C (TJ) | Through Hole | |
R6515ENXC7G650V 15A TO-220FM, LOW-NOISE POW |
1000 | 4.02 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Ta) | 10V | 315mOhm @ 6.5A, 10V | 4V @ 430µA | 40 nC @ 10 V | ±20V | 910 pF @ 25 V | - | 60W (Tc) | 150°C (TJ) | Through Hole | |
R6015KNXC7G600V 15A TO-220FM, HIGH-SPEED SW |
999 | 4.02 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 290mOhm @ 6.5A, 10V | 5V @ 1mA | 27.5 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 60W (Tc) | 150°C (TJ) | Through Hole | |
FQA8N90CMOSFET N-CH 900V 8A TO3P |
3483 | 1.67 |
ДобавитьНемедленный |
Datenblatt |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 8A (Tc) | 10V | 1.9Ohm @ 4A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 2080 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
UPA1572BH(1)-AZN-CHANNEL POWER MOSFET |
2018 | 1.67 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
FQAF8N80MOSFET N-CH 800V 5.9A TO3PF |
557 | 1.67 |
ДобавитьНемедленный |
Datenblatt |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.9A (Tc) | 10V | 1.2Ohm @ 2.95A, 10V | 5V @ 250µA | 57 nC @ 10 V | ±30V | 2350 pF @ 25 V | - | 107W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
NP90N04VDG-E1-AYMOSFET N-CH 40V 90A TO252 |
2500 | 1.68 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | - | 4mOhm @ 45A, 10V | 2.5V @ 250µA | 135 nC @ 10 V | - | 6900 pF @ 25 V | - | 1.2W (Ta), 105W (Tc) | 175°C (TJ) | Surface Mount | |
NP90N04VLG-E1-AYMOSFET N-CH 40V 90A TO252 |
2500 | 1.68 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | - | 4mOhm @ 45A, 10V | 2.5V @ 250µA | 135 nC @ 10 V | - | 6900 pF @ 25 V | - | 1.2W (Ta), 105W (Tc) | 175°C (TJ) | Surface Mount | |
FDMS2506SDCMOSFET N-CH 25V 39A/49A DLCOOL56 |
3205 | 1.70 |
ДобавитьНемедленный |
Datenblatt |
Bulk | Dual Cool™, PowerTrench®, SyncFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 39A (Ta), 49A (Tc) | 4.5V, 10V | 1.45mOhm @ 30A, 10V | 3V @ 1mA | 93 nC @ 10 V | ±20V | 5945 pF @ 13 V | - | 3.3W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
UPA2715GR-E1-ATP-CHANNEL POWER MOSFET |
9739 | 1.71 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
HUF76443P3MOSFET N-CH 60V 75A TO220-3 |
7300 | 1.71 |
ДобавитьНемедленный |
Datenblatt |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 75A, 10V | 3V @ 250µA | 129 nC @ 10 V | ±16V | 4115 pF @ 25 V | - | 260W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
2SK3322(1)-ZK-E2-AZN-CHANNEL POWER MOSFET |
6400 | 1.71 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
UPA2746UT1A-E2-AYN-CHANNEL POWER MOSFET |
6000 | 1.71 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
FS3KM-9A#B00N-CHANNEL POWER MOSFET |
3399 | 1.71 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
RJK03C5DPA-WS#J5AN-CHANNEL POWER MOSFET |
2900 | 1.71 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |