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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDH5500

FDH5500

MOSFET N-CH 55V 75A TO247-3

Fairchild Semiconductor

3835 1.56
- +

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FDH5500

Datenblatt

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 268 nC @ 20 V ±30V 3565 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFM6P10

RFM6P10

P-CHANNEL POWER MOSFET

Harris Corporation

3064 1.56
- +

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RFM6P10

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 6A (Tc) 10V 600mOhm @ 6A, 10V 4V @ 250µA - ±20V 800 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD322

IRFD322

N-CHANNEL POWER MOSFET

Harris Corporation

1111 1.56
- +

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IRFD322

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 400mA (Tc) 10V 2.5Ohm @ 250mA, 10V 4V @ 250µA 15 nC @ 10 V ±20V 455 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF151

IRF151

N-CHANNEL POWER MOSFET

Harris Corporation

512 1.56
- +

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IRF151

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Tc) 10V 55mOhm @ 20A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF242

IRF242

MOSFET N-CH 200V 16A TO3

International Rectifier

277 1.56
- +

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IRF242

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 16A - - - - - - - 125W - Through Hole
2SK3480-S12-AZ

2SK3480-S12-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc

5387 1.57
- +

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2SK3480-S12-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
UPA2732T1A-E1-AY

UPA2732T1A-E1-AY

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

3000 1.57
- +

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Немедленный

Bulk * Active - - - - - - - - - - - - - -
NDB6030L

NDB6030L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

580 1.58
- +

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NDB6030L

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 52A (Tc) 4.5V, 10V 13.5mOhm @ 26A, 10V 3V @ 250µA 60 nC @ 10 V ±16V 1350 pF @ 15 V - 75W (Tc) -65°C ~ 175°C (TJ) Surface Mount
FQA17N40

FQA17N40

MOSFET N-CH 400V 17.2A TO3P

Fairchild Semiconductor

398 1.58
- +

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FQA17N40

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 17.2A (Tc) 10V 270mOhm @ 8.6A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2300 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK4097LS

2SK4097LS

MOSFET N-CH 500V 8.3A TO220FI

onsemi

334 1.58
- +

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2SK4097LS

Datenblatt

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8.3A (Tc) - 650mOhm @ 5A, 10V - 30 nC @ 10 V - 750 pF @ 30 V - 2W (Ta), 35W (Tc) 150°C (TJ) Through Hole
2SK4097LS

2SK4097LS

MOSFET N-CH 500V 9.5A TO220FI

Sanyo

213 1.58
- +

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Немедленный

2SK4097LS

Datenblatt

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9.5A (Ta), 8.3A (Tc) - 650mOhm @ 5A, 10V 5V @ 1mA 30 nC @ 10 V ±30V 750 pF @ 30 V - 2W (Ta), 35W (Tc) 150°C Through Hole
NDB7051

NDB7051

MOSFET N-CH 50V 70A D2PAK

Fairchild Semiconductor

2394 1.59
- +

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NDB7051

Datenblatt

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 70A (Tc) 10V 13mOhm @ 35A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 1930 pF @ 25 V - 130W (Tc) -65°C ~ 175°C (TJ) Surface Mount
R6014YNXC7G

R6014YNXC7G

600V 9A TO-220FM, FAST SWITCHING

Rohm Semiconductor

3889 3.59
- +

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R6014YNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V, 12V 260mOhm @ 5A, 12V 6V @ 1.4mA 20 nC @ 10 V ±30V 890 pF @ 100 V - 54W (Tc) 150°C (TJ) Through Hole
FDB5680

FDB5680

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

7838 1.60
- +

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FDB5680

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Tc) 6V, 10V 20mOhm @ 20A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1850 pF @ 25 V - 65W (Tc) -65°C ~ 175°C (TJ) Surface Mount
IPP80N06S2-07AKSA4

IPP80N06S2-07AKSA4

N-CHANNEL POWER MOSFET

Infineon Technologies

7220 1.60
- +

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IPP80N06S2-07AKSA4

Datenblatt

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.6mOhm @ 68A, 10V 4V @ 180µA 110 nC @ 10 V ±20V 3400 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R280P6FKSA1

IPW60R280P6FKSA1

MOSFET N-CH 600V 13.8A TO247-3

Infineon Technologies

100 3.64
- +

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Немедленный

IPW60R280P6FKSA1

Datenblatt

Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 5.2A, 10V 4.5V @ 430µA 25.5 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF6N80

FQAF6N80

MOSFET N-CH 800V 4.4A TO3PF

Fairchild Semiconductor

892 1.60
- +

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Немедленный

FQAF6N80

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.4A (Tc) 10V 1.95Ohm @ 2.2A, 10V 5V @ 250µA 31 nC @ 10 V ±30V 1500 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF34N25

FQAF34N25

MOSFET N-CH 250V 21.7A TO3PF

Fairchild Semiconductor

610 1.60
- +

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Немедленный

FQAF34N25

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 21.7A (Tc) 10V 85mOhm @ 10.9A, 10V 5V @ 250µA 80 nC @ 10 V ±30V 2750 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB14N30TM

FQB14N30TM

MOSFET N-CH 300V 14.4A D2PAK

Fairchild Semiconductor

602 1.60
- +

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Немедленный

FQB14N30TM

Datenblatt

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 14.4A (Tc) 10V 290mOhm @ 7.2A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1360 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDA16N50

FDA16N50

MOSFET N-CH 500V 16.5A TO3PN

Fairchild Semiconductor

384 1.60
- +

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Немедленный

FDA16N50

Datenblatt

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 16.5A (Tc) 10V 380mOhm @ 8.3A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1945 pF @ 25 V - 205W (Tc) -55°C ~ 150°C (TJ) Through Hole
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