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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STFW2N105K5

STFW2N105K5

MOSFET N-CH 1050V 2A ISOWATT

STMicroelectronics

775 3.00
- +

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Немедленный

STFW2N105K5

Datenblatt

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 1050 V 2A (Tc) 10V 8Ohm @ 750mA, 10V 5V @ 100µA 10 nC @ 10 V 30V 115 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9632

IRF9632

P-CHANNEL POWER MOSFET

Harris Corporation

455 1.42
- +

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IRF9632

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 1.2Ohm @ 3.5A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 550 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP8D5N10C

FDP8D5N10C

MOSFET N-CH 100V 76A TO220-3

onsemi

146 3.00
- +

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Немедленный

FDP8D5N10C

Datenblatt

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 76A (Tc) 10V 8.5mOhm @ 76A, 10V 4V @ 130µA 34 nC @ 10 V ±20V 2475 pF @ 50 V - 2.4W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP245

IRFP245

N-CHANNEL POWER MOSFET

Harris Corporation

400 1.42
- +

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IRFP245

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 340mOhm @ 10A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP8N65X2M

IXTP8N65X2M

MOSFET N-CH 650V 4A TO220

IXYS

3844 3.00
- +

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IXTP8N65X2M

Datenblatt

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 550mOhm @ 4A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 800 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLZ44PBF-BE3

IRLZ44PBF-BE3

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix

796 3.01
- +

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Немедленный

IRLZ44PBF-BE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI7N80TU

FQI7N80TU

MOSFET N-CH 800V 6.6A I2PAK

onsemi

970 3.02
- +

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FQI7N80TU

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 800 V 6.6A (Tc) 10V 1.5Ohm @ 3.3A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1850 pF @ 25 V - 3.13W (Ta), 167W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB7N65CTM

FQB7N65CTM

MOSFET N-CH 650V 7A D2PAK

Fairchild Semiconductor

7686 1.44
- +

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FQB7N65CTM

Datenblatt

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 1.4Ohm @ 3.5A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1245 pF @ 25 V - 173W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDU8770

FDU8770

MOSFET N-CH 25V 35A IPAK

Fairchild Semiconductor

7050 1.44
- +

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Немедленный

FDU8770

Datenblatt

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 35A (Tc) 4.5V, 10V 4mOhm @ 35A, 10V 2.5V @ 250µA 73 nC @ 10 V ±20V 3720 pF @ 13 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK974L-E

2SK974L-E

GENERAL SWITCHING POWER MOSFET

Renesas Electronics America Inc

5055 1.44
- +

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Немедленный

Bulk * Obsolete - - - - - - - - - - - - - -
FDB2570

FDB2570

MOSFET N-CH 150V 22A TO263AB

Fairchild Semiconductor

4529 1.44
- +

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FDB2570

Datenblatt

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 22A (Ta) 6V, 10V 80mOhm @ 11A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1911 pF @ 75 V - 93W (Tc) -65°C ~ 175°C (TJ) Surface Mount
2SK974-93L-E

2SK974-93L-E

GENERAL SWITCHING POWER MOSFET

Renesas Electronics America Inc

2022 1.44
- +

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Немедленный

Bulk * Obsolete - - - - - - - - - - - - - -
STB8N50ET4

STB8N50ET4

NFET D2PAK SPCL 500V TR

onsemi

1200 1.44
- +

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Немедленный

Bulk * Active - - - - - - - - - - - - - -
TPIC5403DW

TPIC5403DW

N-CHANNEL POWER MOSFET

Texas Instruments

778 1.44
- +

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Немедленный

TPIC5403DW

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
RJK4007DPP-G2#T2

RJK4007DPP-G2#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

456 1.45
- +

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Немедленный

Bulk * Active - - - - - - - - - - - - - -
AOTF266L

AOTF266L

MOSFET N-CH 60V 18A/78A TO220-3F

Alpha & Omega Semiconductor Inc.

111 3.05
- +

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Немедленный

AOTF266L

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Ta), 78A (Tc) 6V, 10V 3.5mOhm @ 20A, 10V 3.2V @ 250µA 90 nC @ 10 V ±20V 5650 pF @ 30 V - 2.1W (Ta), 45.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISL9N304AS3ST

ISL9N304AS3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

4660 1.46
- +

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ISL9N304AS3ST

Datenblatt

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 4.5mOhm @ 75A, 10V 3V @ 250µA 105 nC @ 10 V ±20V 4075 pF @ 15 V - 145W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRF541

IRF541

N-CHANNEL POWER MOSFET

Harris Corporation

4100 1.46
- +

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Немедленный

IRF541

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1450 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6507ENXC7G

R6507ENXC7G

650V 7A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor

1000 3.08
- +

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Немедленный

R6507ENXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Ta) 10V 665mOhm @ 2.4A, 10V 4V @ 200µA 20 nC @ 10 V ±20V 390 pF @ 25 V - 46W (Tc) 150°C (TJ) Through Hole
R6007KNXC7G

R6007KNXC7G

600V 7A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor

1000 3.08
- +

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Немедленный

R6007KNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 620mOhm @ 2.4A, 10V 5V @ 1mA 14.5 nC @ 10 V ±20V 470 pF @ 25 V - 46W (Tc) 150°C (TJ) Through Hole
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