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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFP6N50

RFP6N50

N-CHANNEL POWER MOSFET

Harris Corporation

1793 1.74
- +

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RFP6N50

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Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) 10V 1.25Ohm @ 3A, 10V 4V @ 1mA - ±20V 1500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R190E6

IPW65R190E6

N-CHANNEL POWER MOSFET

Infineon Technologies

539 1.74
- +

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IPW65R190E6

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
AUIRFSL3206

AUIRFSL3206

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

250 1.74
- +

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AUIRFSL3206

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) - 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V - 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPW11N60CFD

SPW11N60CFD

N-CHANNEL POWER MOSFET

Infineon Technologies

391 1.75
- +

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SPW11N60CFD

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
NP90N03VUG-E1-AY

NP90N03VUG-E1-AY

MOSFET N-CH 30V 90A TO252

Renesas Electronics America Inc

10000 1.76
- +

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NP90N03VUG-E1-AY

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Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) - 3.2mOhm @ 45A, 10V 4V @ 250µA 135 nC @ 10 V - 7500 pF @ 25 V - 1.2W (Ta), 105W (Tc) 175°C (TJ) Surface Mount
AUIRFS4410Z

AUIRFS4410Z

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

8655 1.76
- +

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AUIRFS4410Z

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UPA2731T1A-E1-AZ

UPA2731T1A-E1-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

6000 1.76
- +

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Bulk * Active - - - - - - - - - - - - - -
FDB6670AS

FDB6670AS

MOSFET N-CH 30V 62A TO263AB

Fairchild Semiconductor

5998 1.77
- +

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FDB6670AS

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Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Ta) 4.5V, 10V 8.5mOhm @ 31A, 10V 3V @ 1mA 39 nC @ 15 V ±20V 1570 pF @ 15 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9541

IRF9541

P-CHANNEL POWER MOSFET

Harris Corporation

4901 1.77
- +

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IRF9541

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Bulk - Active P-Channel MOSFET (Metal Oxide) 80 V 19A (Tc) 10V 200mOhm @ 10A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 1100 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP11N50CF

FQP11N50CF

MOSFET N-CH 500V 11A TO220-3

Fairchild Semiconductor

2116 1.77
- +

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FQP11N50CF

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Tube FRFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 550mOhm @ 5.5A, 10V 4V @ 250µA 55 nC @ 10 V ±30V 2055 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) Through Hole
HAT1139H-EL-E

HAT1139H-EL-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

1500 1.78
- +

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HAT1139H-EL-E

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Bulk * Active - - - - - - - - - - - - - -
2SK3058-Z-E1-AZ

2SK3058-Z-E1-AZ

N-CHANNEL POWER MOSFET

NEC Corporation

1000 1.78
- +

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2SK3058-Z-E1-AZ

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Bulk * Active - - - - - - - - - - - - - -
SPA11N65C3XKSA1

SPA11N65C3XKSA1

MOSFET N-CH 650V 11A TO220-FP

Infineon Technologies

3650 4.66
- +

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SPA11N65C3XKSA1

Datenblatt

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75345P3_NL

HUF75345P3_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

252 1.78
- +

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HUF75345P3_NL

Datenblatt

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 275 nC @ 20 V ±20V 4000 pF @ 25 V - 325W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRL1404S

AUIRL1404S

PFET, 160A I(D), 40V, 0.004OHM

International Rectifier

2225 2225.00
- +

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AUIRL1404S

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ)
AUIRL1404STRL

AUIRL1404STRL

AUTOMOTIVE POWER MOSFET

International Rectifier

820 1.79
- +

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AUIRL1404STRL

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SJ387L-E

2SJ387L-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

446 1.79
- +

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2SJ387L-E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
HUF76137S3S

HUF76137S3S

N-CHANNEL POWER MOSFET

Harris Corporation

197 1.79
- +

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Немедленный

HUF76137S3S

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 9mOhm @ 75A, 10V 3V @ 250µA 72 nC @ 10 V ±16V 2100 pF @ 25 V - 145W (Tc) -40°C ~ 150°C (TJ) Surface Mount
SPI20N60CFD

SPI20N60CFD

N-CHANNEL POWER MOSFET

Infineon Technologies

168 1.79
- +

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Немедленный

SPI20N60CFD

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
R6520KNX3C16

R6520KNX3C16

650V 20A, TO-220AB, HIGH-SPEED S

Rohm Semiconductor

973 4.74
- +

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Немедленный

R6520KNX3C16

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 205mOhm @9.5A, 10V 5V @ 630µA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 220W (Tc) 150°C (TJ) Through Hole
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