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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R6020KNXC7G

R6020KNXC7G

600V 20A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

989 5.14
- +

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Немедленный

R6020KNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 68W (Tc) 150°C (TJ) Through Hole
R6024VNXC7G

R6024VNXC7G

600V 13A TO-220FM, PRESTOMOS WIT

Rohm Semiconductor

2078 5.19
- +

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Немедленный

R6024VNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V, 15V 153mOhm @ 6A, 15V 6.5V @ 700µA 38 nC @ 10 V ±30V 1800 pF @ 100 V - 70W (Tc) 150°C (TJ) Through Hole
FDP5500-F085

FDP5500-F085

MOSFET N-CH 55V 80A TO220-3

Fairchild Semiconductor

175 1.91
- +

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Немедленный

FDP5500-F085

Datenblatt

Bulk Automotive, AEC-Q101, UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) - 7mOhm @ 80A, 10V 4V @ 250µA 269 nC @ 20 V ±20V 3565 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK1313S-E

2SK1313S-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

1000 1.92
- +

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Немедленный

2SK1313S-E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
2SJ302-Z-AZ

2SJ302-Z-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

740 1.92
- +

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Немедленный

2SJ302-Z-AZ

Datenblatt

Bulk * Obsolete - - - - - - - - - - - - - -
SPB11N60C2

SPB11N60C2

N-CHANNEL POWER MOSFET

Infineon Technologies

300 1.92
- +

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SPB11N60C2

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
2SK1313-01L-E

2SK1313-01L-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

281 1.92
- +

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Немедленный

Bulk * Active - - - - - - - - - - - - - -
IPB80N04S2H4-ATMA2

IPB80N04S2H4-ATMA2

N-CHANNEL POWER MOSFET

Infineon Technologies

161 1.93
- +

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Немедленный

IPB80N04S2H4-ATMA2

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SJ605-ZJ-E1-AZ

2SJ605-ZJ-E1-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

652 1.97
- +

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Немедленный

2SJ605-ZJ-E1-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
NP82N055KHE-E1-AZ

NP82N055KHE-E1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

800 1.98
- +

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Немедленный

Bulk * Active - - - - - - - - - - - - - -
NP82N055MUG-S18-AY

NP82N055MUG-S18-AY

MOSFET N-CH 55V 82A TO220

NEC Corporation

500 1.98
- +

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Немедленный

NP82N055MUG-S18-AY

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 82A (Tc) - 6mOhm @ 41A, 10V 4V @ 250µA 160 nC @ 10 V - 9600 pF @ 25 V - 1.8W (Ta), 143W (Tc) 175°C (TJ) Through Hole
NP82N055NUG-S18-AY

NP82N055NUG-S18-AY

MOSFET N-CH 55V 82A TO262

Renesas Electronics America Inc

350 1.98
- +

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Немедленный

NP82N055NUG-S18-AY

Datenblatt

Tube Automotive, AEC-Q101 Obsolete N-Channel MOSFET (Metal Oxide) 55 V 82A (Tc) - 6mOhm @ 41A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 9600 pF @ 25 V - 1.8W (Ta), 143W (Tc) 175°C Through Hole
2SK3234-E

2SK3234-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

180 1.98
- +

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Немедленный

2SK3234-E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRF9233

IRF9233

MOSFET P-CH 150V 5.5A TO204AE

International Rectifier

301 2.00
- +

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Немедленный

IRF9233

Datenblatt

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 5.5A - - - - - - Standard 75W - Through Hole
FDS3170N7

FDS3170N7

MOSFET N-CH 100V 6.7A 8SO

Fairchild Semiconductor

179 2.01
- +

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Немедленный

FDS3170N7

Datenblatt

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 6.7A (Ta) 6V, 10V 26mOhm @ 6.7A, 10V 4V @ 250µA 77 nC @ 10 V ±20V 2714 pF @ 50 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
HUF76645S3ST

HUF76645S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

788 2.02
- +

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Немедленный

HUF76645S3ST

Datenblatt

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 4.5V, 10V 14mOhm @ 75A, 10V 3V @ 250µA 153 nC @ 10 V ±16V 4400 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SJ143(2)-S6-AZ

2SJ143(2)-S6-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

699 2.02
- +

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Немедленный

2SJ143(2)-S6-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IXTQ42N25P

IXTQ42N25P

MOSFET N-CH 250V 42A TO3P

IXYS

3442 5.44
- +

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Немедленный

IXTQ42N25P

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 250 V 42A (Tc) 10V 84mOhm @ 500mA, 10V 5.5V @ 250µA 70 nC @ 10 V ±20V 2300 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA030N10NF2SXKSA1

IPA030N10NF2SXKSA1

TRENCH >=100V PG-TO220-3

Infineon Technologies

3687 5.47
- +

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Немедленный

IPA030N10NF2SXKSA1

Datenblatt

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 100 V 83A (Tc) 6V, 10V 3mOhm @ 50A, 10V 3.8V @ 169µA 154 nC @ 10 V ±20V 7300 pF @ 50 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS750A

IRFS750A

MOSFET N-CH 400V 8.4A TO220F

Fairchild Semiconductor

269 2.04
- +

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Немедленный

IRFS750A

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 8.4A (Tc) 10V 300mOhm @ 4.2A, 10V 4V @ 250µA 131 nC @ 10 V ±30V 2780 pF @ 25 V - 49W (Tc) -55°C ~ 150°C (TJ) Through Hole
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