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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK2738-E

2SK2738-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

289 2.05
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2SK2738-E

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AUIRFS3206

AUIRFS3206

AUTOMOTIVE POWER MOSFET

International Rectifier

300 2.06
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AUIRFS3206

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R6520ENXC7G

R6520ENXC7G

650V 20A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

999 5.59
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R6520ENXC7G

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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Ta) 10V 205mOhm @ 9.5A, 10V 4V @ 630µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 68W (Tc) 150°C (TJ) Through Hole
R6020ENXC7G

R6020ENXC7G

600V 20A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

996 5.59
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R6020ENXC7G

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 196mOhm @ 9.5A, 10V 4V @ 1mA 60 nC @ 10 V ±20V 1400 pF @ 25 V - 68W (Tc) 150°C (TJ) Through Hole
NP82N06NLG-S18-AY

NP82N06NLG-S18-AY

MOSFET N-CH 60V 82A TO262

Renesas Electronics America Inc

400 2.07
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NP82N06NLG-S18-AY

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Tube Automotive, AEC-Q101 Obsolete N-Channel MOSFET (Metal Oxide) 60 V 82A (Tc) - 7.4mOhm @ 41A, 10V 2.5V @ 250µA 160 nC @ 10 V ±20V 8550 pF @ 25 V - 1.8W (Ta), 143W (Tc) 175°C Through Hole
2SK2341-AZ

2SK2341-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

258 2.13
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2SK2341-AZ

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SPB160N04S2-03

SPB160N04S2-03

160A, 40V N-CHANNEL, MOSFET

Infineon Technologies

393 2.14
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SPB160N04S2-03

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IXTA1R4N120P

IXTA1R4N120P

MOSFET N-CH 1200V 1.4A TO263

IXYS

2847 5.84
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IXTA1R4N120P

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Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 1.4A (Tc) 10V 13Ohm @ 500mA, 10V 4.5V @ 100µA 24.8 nC @ 10 V ±20V 666 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6024ENXC7G

R6024ENXC7G

600V 24A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

1000 5.85
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R6024ENXC7G

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Ta) 10V 165mOhm @ 11.3A, 10V 4V @ 1mA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 74W (Tc) 150°C (TJ) Through Hole
R6024KNXC7G

R6024KNXC7G

600V 24A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

1000 5.85
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R6024KNXC7G

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Ta) 10V 165mOhm @ 11.3A, 10V 5V @ 1mA 45 nC @ 10 V ±20V 2000 pF @ 25 V - 74W (Tc) 150°C (TJ) Through Hole
R6524ENXC7G

R6524ENXC7G

650V 24A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

1000 5.85
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R6524ENXC7G

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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 185mOhm @ 11.3A, 10V 4V @ 750µA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 74W (Tc) 150°C (TJ) Through Hole
R6524KNXC7G

R6524KNXC7G

650V 24A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

990 5.85
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R6524KNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 185mOhm @ 11.3A, 10V 5V @ 750µA 45 nC @ 10 V ±20V 1850 pF @ 25 V - 74W (Tc) 150°C (TJ) Through Hole
NP82N04MDG-S18-AY

NP82N04MDG-S18-AY

MOSFET N-CH 40V 82A TO220-3

Renesas Electronics America Inc

700 2.16
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NP82N04MDG-S18-AY

Datenblatt

Tube Automotive, AEC-Q101 Obsolete N-Channel MOSFET (Metal Oxide) 40 V 82A (Tc) - 4.2mOhm @ 41A, 10V 2.5V @ 250µA 150 nC @ 10 V ±20V 9000 pF @ 25 V - 1.8W (Ta), 143W (Tc) 175°C Through Hole
R6024VNX3C16

R6024VNX3C16

600V 24A TO-220AB, PRESTOMOS WIT

Rohm Semiconductor

2501 5.91
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R6024VNX3C16

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V, 15V 153mOhm @ 6A, 15V 6.5V @ 700µA 38 nC @ 10 V ±30V 1800 pF @ 100 V - 245W (Tc) 150°C (TJ) Through Hole
2SK3116-S-AZ

2SK3116-S-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

465 2.20
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2SK3116-S-AZ

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RJK2017DPE-WS#J3

RJK2017DPE-WS#J3

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

680 2.22
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BUZ331

BUZ331

N-CHANNEL POWER MOSFET

Infineon Technologies

215 2.28
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BUZ331

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IRFS350A

IRFS350A

MOSFET N-CH 400V 11.5A TO3PF

Fairchild Semiconductor

188 2.28
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IRFS350A

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Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 11.5A (Tc) 10V 300mOhm @ 5.75A, 10V 4V @ 250µA 131 nC @ 10 V ±30V 2780 pF @ 25 V - 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6524ENZ4C13

R6524ENZ4C13

650V 24A TO-247, LOW-NOISE POWER

Rohm Semiconductor

495 6.27
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R6524ENZ4C13

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 185mOhm @ 11.3A, 10V 4V @ 750µA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 245W (Tc) 150°C (TJ) Through Hole
2SK2133-Z-E1-AZ

2SK2133-Z-E1-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc

481 2.30
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2SK2133-Z-E1-AZ

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