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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF1405ZSTRLPBF

IRF1405ZSTRLPBF

PFET, 75A I(D), 55V, 0.0049OHM

International Rectifier

437 437.00
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IRF1405ZSTRLPBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ)
STU6N90K5

STU6N90K5

MOSFET N-CH 900V 6A IPAK

STMicroelectronics

182 2.27
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STU6N90K5

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Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 900 V 6A (Tc) 10V 1.1Ohm @ 3A, 10V 5V @ 100µA - ±30V - - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF1405ZSPBF

IRF1405ZSPBF

MOSFET N-CH 55V 75A TO263-3-2

International Rectifier

250 1.20
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IRF1405ZSPBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK2378

2SK2378

N-CHANNEL POWER MOSFET

onsemi

5612 1.21
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2SK2378

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Bulk * Active - - - - - - - - - - - - - -
2SJ651

2SJ651

MOSFET P-CH 60V 20A TO220ML

onsemi

4569 1.21
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2SJ651

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Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 20A (Ta) - 60mOhm @ 10A, 10V - 45 nC @ 10 V - 2200 pF @ 20 V - 2W (Ta), 25W (Tc) 150°C (TJ) Through Hole
2SK1283-AZ

2SK1283-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

1431 1.21
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2SK1283-AZ

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Bulk * Active - - - - - - - - - - - - - -
IPP019N06NF2SAKMA1

IPP019N06NF2SAKMA1

TRENCH 40<-<100V PG-TO220-3

Infineon Technologies

998 2.31
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IPP019N06NF2SAKMA1

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Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 33A (Ta), 185A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.3V @ 129µA 162 nC @ 10 V ±20V 7300 pF @ 30 V - 3.8W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK1283(1)-AZ

2SK1283(1)-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

961 1.21
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RFP7N40

RFP7N40

N-CHANNEL POWER MOSFET

Harris Corporation

471 1.21
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RFP7N40

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Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 7A (Tc) 10V 750mOhm @ 3.5A, 10V 4V @ 1mA - ±20V 1600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDI9406_F085

FDI9406_F085

110A, 40V, 0.0022OHM, N-CHANNEL

Fairchild Semiconductor

400 1.21
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FDI9406_F085

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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 2.2mOhm @ 80A, 10V 4V @ 250µA 138 nC @ 10 V ±20V 7710 pF @ 25 V - 176W (Tj) -55°C ~ 175°C (TJ) Through Hole
STP7LN80K5

STP7LN80K5

MOSFET N-CH 800V 5A TO220

STMicroelectronics

955 2.33
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STP7LN80K5

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Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 1.15Ohm @ 2.5A, 10V 5V @ 100µA 12 nC @ 10 V ±30V 270 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBE30PBF-BE3

IRFBE30PBF-BE3

MOSFET N-CH 800V 4.1A TO220AB

Vishay Siliconix

944 2.35
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IRFBE30PBF-BE3

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Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) - 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW07N60CFD

SPW07N60CFD

N-CHANNEL POWER MOSFET

Infineon Technologies

2922 1.23
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RJK4007DPP-00#T2

RJK4007DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

393 1.23
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RJK4007DPP-00#T2

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Bulk * Active - - - - - - - - - - - - - -
RCJ331N25TL

RCJ331N25TL

250V 33A, NCH, TO-263S, POWER MO

Rohm Semiconductor

1000 4.54
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RCJ331N25TL

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 33A (Tc) 10V 105mOhm @ 16.5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 4500 pF @ 25 V - 1.56W (Ta), 211W (Tc) 150°C (TJ) Surface Mount
RCJ451N20TL

RCJ451N20TL

200V 45A, NCH, TO-263S, POWER MO

Rohm Semiconductor

1000 4.55
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RCJ451N20TL

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 45A (Tc) 10V 55mOhm @ 22.5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 4200 pF @ 25 V - 1.56W (Ta), 211W (Tc) 150°C (TJ) Surface Mount
IPW50R299CP

IPW50R299CP

N-CHANNEL POWER MOSFET

Infineon Technologies

9838 1.25
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IPW50R299CP

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Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 31 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP12N60

FQP12N60

MOSFET N-CH 600V 10.5A TO220-3

Fairchild Semiconductor

9664 1.25
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FQP12N60

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.5A (Tc) 10V 700mOhm @ 5.3A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1900 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF250N65S3R0L-F154

FCPF250N65S3R0L-F154

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

972 2.44
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FCPF250N65S3R0L-F154

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Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tj) 10V 250mOhm @ 6A, 10V 4.5V @ 290µA 24 nC @ 10 V ±30V 1010 pF @ 400 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF13N50

FQPF13N50

MOSFET N-CH 500V 12.5A TO220F

Fairchild Semiconductor

2475 1.25
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FQPF13N50

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12.5A (Tc) 10V 430mOhm @ 6.25A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2300 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Through Hole
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