Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2SK3367-AZSMALL SIGNAL N-CHANNEL MOSFET |
753 | 1.28 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
FQA34N20LMOSFET N-CH 200V 34A TO3P |
669 | 1.28 |
ДобавитьНемедленный |
Datenblatt |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 34A (Tc) | 5V, 10V | 75mOhm @ 17A, 10V | 2V @ 250µA | 72 nC @ 5 V | ±20V | 3900 pF @ 25 V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
RX3G07CGNC16MOSFET N-CH 40V 70A TO220AB |
877 | 2.59 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | - | 4.7mOhm @ 70A, 10V | 2.5V @ 500µA | 32 nC @ 10 V | ±20V | 2410 pF @ 20 V | - | 78W (Tc) | 150°C (TJ) | Through Hole | |
FDB8160-F08580A, 30V, 0.0018OHM, N-CHANNEL |
9581 | 9581.00 |
ДобавитьНемедленный |
Datenblatt |
Bulk | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 10V | 1.8mOhm @ 80A, 10V | 4V @ 250µA | 243 nC @ 10 V | ±20V | 11825 pF @ 15 V | - | 254W (Tc) | -55°C ~ 175°C (TJ) | ||
AUIRFS8408TRRMOSFET N-CH 40V 195A D2PAK |
490 | 1.29 |
ДобавитьНемедленный |
Datenblatt |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | - | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324 nC @ 10 V | ±20V | 10820 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
AUIRFS8408AUTOMOTIVE HEXFET N CHANNEL |
268 | 1.29 |
ДобавитьНемедленный |
Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324 nC @ 10 V | ±20V | 10820 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
STU8N80K5MOSFET N-CH 800V 6A TO251 |
498 | 2.60 |
ДобавитьНемедленный |
Datenblatt |
Tube | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 950mOhm @ 3A, 10V | 5V @ 100µA | 16.5 nC @ 10 V | ±30V | 450 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
2SJ133-Z-E1-AZPOWER FIELD-EFFECT TRANSISTOR |
5868 | 1.30 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
IRFPC423.9A, 1000V, 4.2 OHM, N-CHANNEL |
5701 | 1.30 |
ДобавитьНемедленный |
Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.9A (Tc) | 10V | 1.6Ohm @ 3.7A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
R8003KNXC7G800V 3A, TO-220FM, HIGH-SPEED SW |
977 | 2.61 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Ta) | 10V | 1.8Ohm @ 1.5A, 10V | 4.5V @ 2mA | 11.5 nC @ 10 V | ±20V | 300 pF @ 100 V | - | 36W (Tc) | 150°C (TJ) | Through Hole | |
RJK6024DPD-00#J2N-CHANNEL POWER MOSFET |
3000 | 1.30 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 400mA (Ta) | 10V | 42Ohm @ 200mA, 10V | - | 4.3 nC @ 10 V | ±30V | 37.5 pF @ 25 V | - | 27.2W (Tc) | 150°C (TJ) | Surface Mount | |
IRFBC40APBF-BE3MOSFET N-CH 600V 6.2A TO220AB |
721 | 2.61 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | - | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±30V | 1036 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
STI6N90K5MOSFET N-CH 900V 6A I2PAK |
140 | 2.61 |
ДобавитьНемедленный |
Datenblatt |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 6A (Tc) | 10V | 1.1Ohm @ 3A, 10V | 5V @ 100µA | - | ±30V | - | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
2SK4085LS-1EMOSFET N-CH 500V 11A TO220F-3FS |
1000 | 1.30 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | - | 430mOhm @ 8A, 10V | 5V @ 1mA | 46.6 nC @ 10 V | ±30V | 1200 pF @ 30 V | - | 2W (Ta), 40W (Tc) | 150°C | Through Hole | |
2SK4085LS-1EN-CHANNEL SILICON MOSFET |
400 | 1.30 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 430mOhm @ 8A, 10V | 5V @ 1mA | 46.6 nC @ 10 V | ±30V | 1200 pF @ 30 V | - | 2W (Ta), 40W (Tc) | 150°C | Through Hole | |
2SK1420N-CHANNEL POWER MOSFET |
7532 | 1.31 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
FDP10AN06A0MOSFET N-CH 60V 12A/75A TO220-3 |
5110 | 1.31 |
ДобавитьНемедленный |
Datenblatt |
Tube | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Ta), 75A (Tc) | 6V, 10V | 10.5mOhm @ 75A, 10V | 4V @ 250µA | 37 nC @ 10 V | ±20V | 1840 pF @ 25 V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
R6504ENXC7G650V 4A TO-220FM, LOW-NOISE POWE |
1000 | 2.65 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4A (Ta) | 10V | 1.05Ohm @ 1.5A, 10V | 4V @ 130µA | 15 nC @ 10 V | ±20V | 220 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Through Hole | |
R6004ENXC7G600V 4A TO-220FM, LOW-NOISE POWE |
1000 | 2.65 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 980mOhm @ 1.5A, 10V | 4V @ 1mA | 15 nC @ 10 V | ±20V | 250 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Through Hole | |
FQP55N06MOSFET N-CH 60V 55A TO220-3 |
3427 | 1.31 |
ДобавитьНемедленный |
Datenblatt |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 55A (Tc) | 10V | 20mOhm @ 27.5A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±25V | 1690 pF @ 25 V | - | 133W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |