Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK3367-AZ

2SK3367-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc

753 1.28
- +

Добавить

Немедленный

2SK3367-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FQA34N20L

FQA34N20L

MOSFET N-CH 200V 34A TO3P

Fairchild Semiconductor

669 1.28
- +

Добавить

Немедленный

FQA34N20L

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 34A (Tc) 5V, 10V 75mOhm @ 17A, 10V 2V @ 250µA 72 nC @ 5 V ±20V 3900 pF @ 25 V - 210W (Tc) -55°C ~ 150°C (TJ) Through Hole
RX3G07CGNC16

RX3G07CGNC16

MOSFET N-CH 40V 70A TO220AB

Rohm Semiconductor

877 2.59
- +

Добавить

Немедленный

RX3G07CGNC16

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) - 4.7mOhm @ 70A, 10V 2.5V @ 500µA 32 nC @ 10 V ±20V 2410 pF @ 20 V - 78W (Tc) 150°C (TJ) Through Hole
FDB8160-F085

FDB8160-F085

80A, 30V, 0.0018OHM, N-CHANNEL

Fairchild Semiconductor

9581 9581.00
- +

Добавить

Немедленный

FDB8160-F085

Datenblatt

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 1.8mOhm @ 80A, 10V 4V @ 250µA 243 nC @ 10 V ±20V 11825 pF @ 15 V - 254W (Tc) -55°C ~ 175°C (TJ)
AUIRFS8408TRR

AUIRFS8408TRR

MOSFET N-CH 40V 195A D2PAK

International Rectifier

490 1.29
- +

Добавить

Немедленный

AUIRFS8408TRR

Datenblatt

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) - 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8408

AUIRFS8408

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

268 1.29
- +

Добавить

Немедленный

AUIRFS8408

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STU8N80K5

STU8N80K5

MOSFET N-CH 800V 6A TO251

STMicroelectronics

498 2.60
- +

Добавить

Немедленный

STU8N80K5

Datenblatt

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 950mOhm @ 3A, 10V 5V @ 100µA 16.5 nC @ 10 V ±30V 450 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ133-Z-E1-AZ

2SJ133-Z-E1-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc

5868 1.30
- +

Добавить

Немедленный

2SJ133-Z-E1-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRFPC42

IRFPC42

3.9A, 1000V, 4.2 OHM, N-CHANNEL

Harris Corporation

5701 1.30
- +

Добавить

Немедленный

IRFPC42

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 600 V 5.9A (Tc) 10V 1.6Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
R8003KNXC7G

R8003KNXC7G

800V 3A, TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

977 2.61
- +

Добавить

Немедленный

R8003KNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Ta) 10V 1.8Ohm @ 1.5A, 10V 4.5V @ 2mA 11.5 nC @ 10 V ±20V 300 pF @ 100 V - 36W (Tc) 150°C (TJ) Through Hole
RJK6024DPD-00#J2

RJK6024DPD-00#J2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

3000 1.30
- +

Добавить

Немедленный

RJK6024DPD-00#J2

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 400mA (Ta) 10V 42Ohm @ 200mA, 10V - 4.3 nC @ 10 V ±30V 37.5 pF @ 25 V - 27.2W (Tc) 150°C (TJ) Surface Mount
IRFBC40APBF-BE3

IRFBC40APBF-BE3

MOSFET N-CH 600V 6.2A TO220AB

Vishay Siliconix

721 2.61
- +

Добавить

Немедленный

IRFBC40APBF-BE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) - 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
STI6N90K5

STI6N90K5

MOSFET N-CH 900V 6A I2PAK

STMicroelectronics

140 2.61
- +

Добавить

Немедленный

STI6N90K5

Datenblatt

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 900 V 6A (Tc) 10V 1.1Ohm @ 3A, 10V 5V @ 100µA - ±30V - - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK4085LS-1E

2SK4085LS-1E

MOSFET N-CH 500V 11A TO220F-3FS

Fairchild Semiconductor

1000 1.30
- +

Добавить

Немедленный

2SK4085LS-1E

Datenblatt

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) - 430mOhm @ 8A, 10V 5V @ 1mA 46.6 nC @ 10 V ±30V 1200 pF @ 30 V - 2W (Ta), 40W (Tc) 150°C Through Hole
2SK4085LS-1E

2SK4085LS-1E

N-CHANNEL SILICON MOSFET

Sanyo

400 1.30
- +

Добавить

Немедленный

2SK4085LS-1E

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 430mOhm @ 8A, 10V 5V @ 1mA 46.6 nC @ 10 V ±30V 1200 pF @ 30 V - 2W (Ta), 40W (Tc) 150°C Through Hole
2SK1420

2SK1420

N-CHANNEL POWER MOSFET

onsemi

7532 1.31
- +

Добавить

Немедленный

2SK1420

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDP10AN06A0

FDP10AN06A0

MOSFET N-CH 60V 12A/75A TO220-3

Fairchild Semiconductor

5110 1.31
- +

Добавить

Немедленный

FDP10AN06A0

Datenblatt

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Ta), 75A (Tc) 6V, 10V 10.5mOhm @ 75A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 1840 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6504ENXC7G

R6504ENXC7G

650V 4A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor

1000 2.65
- +

Добавить

Немедленный

R6504ENXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Ta) 10V 1.05Ohm @ 1.5A, 10V 4V @ 130µA 15 nC @ 10 V ±20V 220 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
R6004ENXC7G

R6004ENXC7G

600V 4A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor

1000 2.65
- +

Добавить

Немедленный

R6004ENXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 980mOhm @ 1.5A, 10V 4V @ 1mA 15 nC @ 10 V ±20V 250 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
FQP55N06

FQP55N06

MOSFET N-CH 60V 55A TO220-3

Fairchild Semiconductor

3427 1.31
- +

Добавить

Немедленный

FQP55N06

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 10V 20mOhm @ 27.5A, 10V 4V @ 250µA 46 nC @ 10 V ±25V 1690 pF @ 25 V - 133W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 42446 Records«Prev1... 376377378379380381382383...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи