Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IPB22N03S4L-15ATMA1N-CHANNEL POWER MOSFET |
8000 | 1.13 |
ДобавитьНемедленный |
Datenblatt |
Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Tc) | 4.5V, 10V | 14.6mOhm @ 22A, 10V | 2.2V @ 10µA | 14 nC @ 10 V | ±16V | 980 pF @ 25 V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IRF9Z24PBF-BE3MOSFET P-CH 60V 11A TO220AB |
953 | 2.03 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Tc) | - | 280mOhm @ 6.6A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 570 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IPW50R350CPN-CHANNEL POWER MOSFET |
4320 | 1.13 |
ДобавитьНемедленный |
Datenblatt |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 350mOhm @ 5.6A, 10V | 3.5V @ 370µA | 25 nC @ 10 V | ±20V | 1020 pF @ 100 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
HUF75842S3STMOSFET N-CH 150V 43A D2PAK |
3809 | 1.13 |
ДобавитьНемедленный |
Datenblatt |
Bulk | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 43A (Tc) | 10V | 42mOhm @ 43A, 10V | 4V @ 250µA | 175 nC @ 20 V | ±20V | 2730 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
MTP8N50EN-CHANNEL POWER MOSFET |
746 | 1.13 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
HUF75639S3_NLN-CHANNEL POWER MOSFET |
655 | 1.13 |
ДобавитьНемедленный |
Datenblatt |
Bulk | UltraFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
FQPF46N15MOSFET N-CH 150V 25.6A TO220F |
6151 | 1.14 |
ДобавитьНемедленный |
Datenblatt |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 25.6A (Tc) | 10V | 42mOhm @ 12.8A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±25V | 3250 pF @ 25 V | - | 66W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
FQA6N70MOSFET N-CH 700V 6.4A TO3P |
4865 | 1.14 |
ДобавитьНемедленный |
Datenblatt |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 6.4A (Tc) | 10V | 1.5Ohm @ 3.2A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 152W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRFD3100.4A 400V 3.600 OHM N-CHANNEL |
3189 | 1.14 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 350mA (Ta) | 10V | 3.6Ohm @ 210mA, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | |
RQM2201DNSWS#P1N CH MOS FET POWER SWITCHING |
1970 | 1.14 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
FQPF34N20LMOSFET N-CH 200V 17.5A TO220F |
764 | 1.14 |
ДобавитьНемедленный |
Datenblatt |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 17.5A (Tc) | 5V, 10V | 75mOhm @ 8.75A, 10V | 2V @ 250µA | 72 nC @ 5 V | ±20V | 3900 pF @ 25 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FCPF360N65S3R0L-F154POWER MOSFET, N-CHANNEL, SUPERFE |
769 | 2.09 |
ДобавитьНемедленный |
Datenblatt |
Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tj) | 10V | 360mOhm @ 5A, 10V | 4.5V @ 200µA | 18 nC @ 10 V | ±30V | 730 pF @ 400 V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IPI034NE7N3GN-CHANNEL POWER MOSFET |
7234 | 1.15 |
ДобавитьНемедленный |
Datenblatt |
Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | - | 3.4mOhm @ 100A, 10V | 3.8V @ 155µA | 117 nC @ 10 V | - | 8130 pF @ 37.5 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IRF431MOSFET N-CH 450V 4.5A TO3 |
1201 | 1.15 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 4.5A | - | 1.5Ohm @ 2.5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 800 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
NP89N06PDK-E1-AYP-TRS2 AUTOMOTIVE MOS |
768 | 2.10 |
ДобавитьНемедленный |
Datenblatt |
Tray | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 5.3mOhm @ 45A, 10V | 2.5V @ 250µA | 95 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 1.8W (Ta), 147W (Tc) | 175°C | Surface Mount | |
R8002KNXC7G800V 1.6A, TO-220FM, HIGH-SPEED |
965 | 2.13 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.6A (Ta) | 10V | 4.2Ohm @ 800mA, 10V | 4.5V @ 150µA | 7.5 nC @ 10 V | ±20V | 140 pF @ 100 V | - | 28W (Tc) | 150°C (TJ) | Through Hole | |
STF16N60M2MOSFET N-CH 600V 12A TO220FP |
231 | 2.13 |
ДобавитьНемедленный |
Datenblatt |
Tube | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 320mOhm @ 6A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±25V | 700 pF @ 100 V | - | 25W (Tc) | 150°C (TJ) | Through Hole | |
HUF76437P3N-CHANNEL POWER MOSFET |
3200 | 1.16 |
ДобавитьНемедленный |
Datenblatt |
Bulk | UltraFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 71A (Tc) | 4.5V, 10V | 14mOhm @ 71A, 10V | 3V @ 250µA | 71 nC @ 10 V | ±16V | 2230 pF @ 25 V | - | 155W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
HUFA75339P3MOSFET N-CH 55V 75A TO220-3 |
2440 | 1.16 |
ДобавитьНемедленный |
Datenblatt |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 12mOhm @ 75A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
SPP80N06S-08N-CHANNEL POWER MOSFET |
2000 | 1.16 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |