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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB22N03S4L-15ATMA1

IPB22N03S4L-15ATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies

8000 1.13
- +

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IPB22N03S4L-15ATMA1

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Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Tc) 4.5V, 10V 14.6mOhm @ 22A, 10V 2.2V @ 10µA 14 nC @ 10 V ±16V 980 pF @ 25 V - 31W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z24PBF-BE3

IRF9Z24PBF-BE3

MOSFET P-CH 60V 11A TO220AB

Vishay Siliconix

953 2.03
- +

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IRF9Z24PBF-BE3

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Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) - 280mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW50R350CP

IPW50R350CP

N-CHANNEL POWER MOSFET

Infineon Technologies

4320 1.13
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IPW50R350CP

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Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 350mOhm @ 5.6A, 10V 3.5V @ 370µA 25 nC @ 10 V ±20V 1020 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75842S3ST

HUF75842S3ST

MOSFET N-CH 150V 43A D2PAK

Fairchild Semiconductor

3809 1.13
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HUF75842S3ST

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Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 43A, 10V 4V @ 250µA 175 nC @ 20 V ±20V 2730 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MTP8N50E

MTP8N50E

N-CHANNEL POWER MOSFET

onsemi

746 1.13
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MTP8N50E

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Bulk * Active - - - - - - - - - - - - - -
HUF75639S3_NL

HUF75639S3_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

655 1.13
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HUF75639S3_NL

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Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF46N15

FQPF46N15

MOSFET N-CH 150V 25.6A TO220F

Fairchild Semiconductor

6151 1.14
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FQPF46N15

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 25.6A (Tc) 10V 42mOhm @ 12.8A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 3250 pF @ 25 V - 66W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQA6N70

FQA6N70

MOSFET N-CH 700V 6.4A TO3P

Fairchild Semiconductor

4865 1.14
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FQA6N70

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 700 V 6.4A (Tc) 10V 1.5Ohm @ 3.2A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1400 pF @ 25 V - 152W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD310

IRFD310

0.4A 400V 3.600 OHM N-CHANNEL

Harris Corporation

3189 1.14
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IRFD310

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Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 350mA (Ta) 10V 3.6Ohm @ 210mA, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
RQM2201DNSWS#P1

RQM2201DNSWS#P1

N CH MOS FET POWER SWITCHING

Renesas Electronics America Inc

1970 1.14
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Bulk * Active - - - - - - - - - - - - - -
FQPF34N20L

FQPF34N20L

MOSFET N-CH 200V 17.5A TO220F

Fairchild Semiconductor

764 1.14
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FQPF34N20L

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 17.5A (Tc) 5V, 10V 75mOhm @ 8.75A, 10V 2V @ 250µA 72 nC @ 5 V ±20V 3900 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF360N65S3R0L-F154

FCPF360N65S3R0L-F154

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

769 2.09
- +

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FCPF360N65S3R0L-F154

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Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tj) 10V 360mOhm @ 5A, 10V 4.5V @ 200µA 18 nC @ 10 V ±30V 730 pF @ 400 V - 27W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI034NE7N3G

IPI034NE7N3G

N-CHANNEL POWER MOSFET

Infineon Technologies

7234 1.15
- +

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IPI034NE7N3G

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Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) - 3.4mOhm @ 100A, 10V 3.8V @ 155µA 117 nC @ 10 V - 8130 pF @ 37.5 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF431

IRF431

MOSFET N-CH 450V 4.5A TO3

International Rectifier

1201 1.15
- +

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IRF431

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Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 4.5A - 1.5Ohm @ 2.5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 800 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
NP89N06PDK-E1-AY

NP89N06PDK-E1-AY

P-TRS2 AUTOMOTIVE MOS

Renesas Electronics America Inc

768 2.10
- +

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NP89N06PDK-E1-AY

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Tray Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 5.3mOhm @ 45A, 10V 2.5V @ 250µA 95 nC @ 10 V ±20V 6000 pF @ 25 V - 1.8W (Ta), 147W (Tc) 175°C Surface Mount
R8002KNXC7G

R8002KNXC7G

800V 1.6A, TO-220FM, HIGH-SPEED

Rohm Semiconductor

965 2.13
- +

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R8002KNXC7G

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Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 1.6A (Ta) 10V 4.2Ohm @ 800mA, 10V 4.5V @ 150µA 7.5 nC @ 10 V ±20V 140 pF @ 100 V - 28W (Tc) 150°C (TJ) Through Hole
STF16N60M2

STF16N60M2

MOSFET N-CH 600V 12A TO220FP

STMicroelectronics

231 2.13
- +

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STF16N60M2

Datenblatt

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 320mOhm @ 6A, 10V 4V @ 250µA 19 nC @ 10 V ±25V 700 pF @ 100 V - 25W (Tc) 150°C (TJ) Through Hole
HUF76437P3

HUF76437P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3200 1.16
- +

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HUF76437P3

Datenblatt

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V 3V @ 250µA 71 nC @ 10 V ±16V 2230 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA75339P3

HUFA75339P3

MOSFET N-CH 55V 75A TO220-3

Fairchild Semiconductor

2440 1.16
- +

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HUFA75339P3

Datenblatt

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 12mOhm @ 75A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP80N06S-08

SPP80N06S-08

N-CHANNEL POWER MOSFET

Infineon Technologies

2000 1.16
- +

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SPP80N06S-08

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
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