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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HAT1130RWS-E

HAT1130RWS-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

2170 1.08
- +

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Bulk * Active - - - - - - - - - - - - - -
BUK753R8-80E,127

BUK753R8-80E,127

TRANSISTOR >30MHZ

NXP USA Inc.

1749 1.08
- +

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BUK753R8-80E,127

Datenblatt

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 169 nC @ 10 V ±20V 12030 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF18N20V2

FQPF18N20V2

MOSFET N-CH 200V 18A TO220F

Fairchild Semiconductor

1234 1.08
- +

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FQPF18N20V2

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 140mOhm @ 9A, 10V 5V @ 250µA 26 nC @ 10 V ±30V 1080 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK3635-Z-E1-AZ

2SK3635-Z-E1-AZ

MOSFET N-CH 200V 8A TO252

Renesas Electronics America Inc

8000 1.09
- +

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2SK3635-Z-E1-AZ

Datenblatt

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 8A (Tc) - 430mOhm @ 4A, 10V 4.5V @ 1mA 12 nC @ 10 V - 390 pF @ 10 V - - - Surface Mount
HAT1041T-EL-E

HAT1041T-EL-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

2900 1.09
- +

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2SK3113-ZK-E2-AZ

2SK3113-ZK-E2-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

2500 1.09
- +

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2SK3113-ZK-E2-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRF9Z34PBF-BE3

IRF9Z34PBF-BE3

MOSFET P-CH 60V 18A TO220AB

Vishay Siliconix

123 1.92
- +

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IRF9Z34PBF-BE3

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) - 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP3205

FDP3205

MOSFET N-CH 55V 100A TO220-3

Fairchild Semiconductor

2301 1.09
- +

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FDP3205

Datenblatt

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 10V 7.5mOhm @ 59A, 10V 5.5V @ 250µA 120 nC @ 10 V ±20V 7730 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK3113-AZ

2SK3113-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc

1828 1.09
- +

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2SK3113-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FQA6N80

FQA6N80

MOSFET N-CH 800V 6.3A TO3P

Fairchild Semiconductor

1562 1.09
- +

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FQA6N80

Datenblatt

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 6.3A (Tc) 10V 1.95Ohm @ 3.15A, 10V 5V @ 250µA 31 nC @ 10 V ±30V 1500 pF @ 25 V - 185W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISL9N302AP3

ISL9N302AP3

MOSFET N-CH 30V 75A TO220-3

Fairchild Semiconductor

1344 1.09
- +

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ISL9N302AP3

Datenblatt

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 2.5mOhm @ 75A, 10V 3V @ 250µA 300 nC @ 10 V ±20V 11000 pF @ 15 V - 345W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK3635-Z-AZ

2SK3635-Z-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc

1293 1.09
- +

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2SK3635-Z-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
2SK3433-ZJ-E1-AZ

2SK3433-ZJ-E1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

800 1.09
- +

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2SK3433-ZJ-E1-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRFB7540PBF

IRFB7540PBF

MOSFET N-CH 60V 110A TO220

Infineon Technologies

560 1.93
- +

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IRFB7540PBF

Datenblatt

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 6V, 10V 5.1mOhm @ 65A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4555 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLR3705Z

AUIRLR3705Z

AUTOMOTIVE HEXFET N-CHANNEL

International Rectifier

449 1.09
- +

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AUIRLR3705Z

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8407TRR

AUIRFS8407TRR

MOSFET N-CH 40V 195A D2PAK

International Rectifier

395 1.09
- +

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AUIRFS8407TRR

Datenblatt

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) - 1.8mOhm @ 100A, 10V 4V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75344P3_NL

HUF75344P3_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

312 1.09
- +

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HUF75344P3_NL

Datenblatt

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 285W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTU02N50D

IXTU02N50D

MOSFET N-CH 500V 200MA TO251

IXYS

2077 1.94
- +

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IXTU02N50D

Datenblatt

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 200mA (Tc) 10V 30Ohm @ 50mA, 0V 5V @ 25µA - ±20V 120 pF @ 25 V Depletion Mode 1.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP12N50E-BE3

SIHP12N50E-BE3

N-CHANNEL 500V

Vishay Siliconix

1000 1.95
- +

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SIHP12N50E-BE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 10.5A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 886 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP129N10NF2SAKMA1

IPP129N10NF2SAKMA1

TRENCH >=100V

Infineon Technologies

915 1.95
- +

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IPP129N10NF2SAKMA1

Datenblatt

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Ta), 52A (Tc) 6V, 10V 12.9mOhm @ 30A, 10V 3.8V @ 30µA 28 nC @ 10 V ±20V 1300 pF @ 50 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
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