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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQAF6N90

FQAF6N90

MOSFET N-CH 900V 4.5A TO3PF

Fairchild Semiconductor

1785 1.25
- +

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FQAF6N90

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 4.5A (Tc) 10V 1.9Ohm @ 2.3A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1880 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF27N25

FQAF27N25

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1440 1.25
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FQAF27N25

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Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 250 V 19A (Tc) 10V 110mOhm @ 9.5A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 2450 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL630PBF-BE3

IRL630PBF-BE3

MOSFET N-CH 200V 9A TO220AB

Vishay Siliconix

1000 2.46
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IRL630PBF-BE3

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Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) - 400mOhm @ 5.4A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 1100 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP141

IRFP141

N-CHANNEL POWER MOSFET

Harris Corporation

288 1.25
- +

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IRFP141

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Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 31A (Tc) 10V 77mOhm @ 19A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1275 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP14N60E-BE3

SIHP14N60E-BE3

N-CHANNEL 600V

Vishay Siliconix

995 2.48
- +

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SIHP14N60E-BE3

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Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK03L3DNS-WS#J5

RJK03L3DNS-WS#J5

N CHANNEL POWER MOS FET

Renesas Electronics America Inc

4950 1.26
- +

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Bulk * Active - - - - - - - - - - - - - -
UPA1728G-E1-AT

UPA1728G-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

2284 1.26
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UPA1728G-E1-AT

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 9A (Ta) - 26mOhm @ 4.5A, 10V 2.5V @ 1mA 31 nC @ 10 V - 1700 pF @ 10 V - - - Surface Mount
NP36N055HLE-AY

NP36N055HLE-AY

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

1000 1.26
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NP36N055HLE-AY

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Bulk * Active - - - - - - - - - - - - - -
IPAN60R180P7SXKSA1

IPAN60R180P7SXKSA1

MOSFET 600V TO220 FULL PACK

Infineon Technologies

500 2.50
- +

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Tube CoolMOS™ Active - - 600 V 18A (Tc) - - - - - - - - - Through Hole
IRFBF20PBF-BE3

IRFBF20PBF-BE3

MOSFET N-CH 900V 1.7A TO220AB

Vishay Siliconix

975 2.52
- +

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IRFBF20PBF-BE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) - 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP6N80E-BE3

SIHP6N80E-BE3

N-CHANNEL 800V

Vishay Siliconix

1000 2.55
- +

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SIHP6N80E-BE3

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Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 940mOhm @ 3A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 827 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDU6688

FDU6688

MOSFET N-CH 30V 84A IPAK

Fairchild Semiconductor

8025 1.28
- +

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FDU6688

Datenblatt

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 84A (Ta) 4.5V, 10V 5mOhm @ 18A, 10V 3V @ 250µA 56 nC @ 5 V ±20V 3845 pF @ 15 V - 83W (Ta) -55°C ~ 175°C (TJ) Through Hole
H7N1004FN-E-A9#B0F

H7N1004FN-E-A9#B0F

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

7000 1.28
- +

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FQB12N60TM

FQB12N60TM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

6990 1.28
- +

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FQB12N60TM

Datenblatt

Bulk QFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 10.5A (Tc) 10V 700mOhm @ 5.3A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1900 pF @ 25 V - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD6688S

FDD6688S

MOSFET N-CH 30V 88A DPAK

Fairchild Semiconductor

6966 1.28
- +

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FDD6688S

Datenblatt

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 88A (Ta) 4.5V, 10V 5.1mOhm @ 18.5A, 10V 3V @ 1mA 81 nC @ 10 V ±20V 3290 pF @ 15 V - 69W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDZ7064N

FDZ7064N

MOSFET N-CH 30V 13.5A 30BGA

Fairchild Semiconductor

6000 1.28
- +

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FDZ7064N

Datenblatt

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta) 4.5V, 10V 7mOhm @ 14.5A, 10V 2V @ 250µA 43 nC @ 4.5 V ±12V 3843 pF @ 15 V - 2.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTPF450N80S3Z

NTPF450N80S3Z

MOSFET N-CH 800V 11A TO220-3

onsemi

958 2.56
- +

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NTPF450N80S3Z

Datenblatt

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tj) - 450mOhm @ 5.5A, 10V 3.8V @ 240µA 19.3 nC @ 10 V ±20V 885 pF @ 400 V - 29.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK0392DPA-WS#J53

RJK0392DPA-WS#J53

POWER TRANSISTOR, MOSFET

Renesas Electronics America Inc

2150 1.28
- +

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Bulk * Active - - - - - - - - - - - - - -
2SK3367-Z-E2-AZ

2SK3367-Z-E2-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc

2000 1.28
- +

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2SK3367-Z-E2-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
RJK0348DPA-WS#J0

RJK0348DPA-WS#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

2000 1.28
- +

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Немедленный

Bulk * Active - - - - - - - - - - - - - -
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