Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FQAF6N90MOSFET N-CH 900V 4.5A TO3PF |
1785 | 1.25 |
ДобавитьНемедленный |
Datenblatt |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 4.5A (Tc) | 10V | 1.9Ohm @ 2.3A, 10V | 5V @ 250µA | 52 nC @ 10 V | ±30V | 1880 pF @ 25 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FQAF27N25N-CHANNEL POWER MOSFET |
1440 | 1.25 |
ДобавитьНемедленный |
Datenblatt |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 19A (Tc) | 10V | 110mOhm @ 9.5A, 10V | 5V @ 250µA | 65 nC @ 10 V | ±30V | 2450 pF @ 25 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRL630PBF-BE3MOSFET N-CH 200V 9A TO220AB |
1000 | 2.46 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | - | 400mOhm @ 5.4A, 5V | 2V @ 250µA | 40 nC @ 10 V | ±10V | 1100 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRFP141N-CHANNEL POWER MOSFET |
288 | 1.25 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 31A (Tc) | 10V | 77mOhm @ 19A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1275 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
SIHP14N60E-BE3N-CHANNEL 600V |
995 | 2.48 |
ДобавитьНемедленный |
Datenblatt |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 309mOhm @ 7A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±30V | 1205 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
RJK03L3DNS-WS#J5N CHANNEL POWER MOS FET |
4950 | 1.26 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
UPA1728G-E1-ATN-CHANNEL POWER MOSFET |
2284 | 1.26 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 9A (Ta) | - | 26mOhm @ 4.5A, 10V | 2.5V @ 1mA | 31 nC @ 10 V | - | 1700 pF @ 10 V | - | - | - | Surface Mount | |
NP36N055HLE-AYN-CHANNEL POWER MOSFET |
1000 | 1.26 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
IPAN60R180P7SXKSA1MOSFET 600V TO220 FULL PACK |
500 | 2.50 |
ДобавитьНемедленный |
Tube | CoolMOS™ | Active | - | - | 600 V | 18A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | ||
IRFBF20PBF-BE3MOSFET N-CH 900V 1.7A TO220AB |
975 | 2.52 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 1.7A (Tc) | - | 8Ohm @ 1A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
SIHP6N80E-BE3N-CHANNEL 800V |
1000 | 2.55 |
ДобавитьНемедленный |
Datenblatt |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.4A (Tc) | 10V | 940mOhm @ 3A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±30V | 827 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FDU6688MOSFET N-CH 30V 84A IPAK |
8025 | 1.28 |
ДобавитьНемедленный |
Datenblatt |
Tube | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 84A (Ta) | 4.5V, 10V | 5mOhm @ 18A, 10V | 3V @ 250µA | 56 nC @ 5 V | ±20V | 3845 pF @ 15 V | - | 83W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | |
H7N1004FN-E-A9#B0FN-CHANNEL POWER MOSFET |
7000 | 1.28 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
FQB12N60TMN-CHANNEL POWER MOSFET |
6990 | 1.28 |
ДобавитьНемедленный |
Datenblatt |
Bulk | QFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.5A (Tc) | 10V | 700mOhm @ 5.3A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 3.13W (Ta), 180W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
FDD6688SMOSFET N-CH 30V 88A DPAK |
6966 | 1.28 |
ДобавитьНемедленный |
Datenblatt |
Bulk | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 88A (Ta) | 4.5V, 10V | 5.1mOhm @ 18.5A, 10V | 3V @ 1mA | 81 nC @ 10 V | ±20V | 3290 pF @ 15 V | - | 69W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
FDZ7064NMOSFET N-CH 30V 13.5A 30BGA |
6000 | 1.28 |
ДобавитьНемедленный |
Datenblatt |
Bulk | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.5A (Ta) | 4.5V, 10V | 7mOhm @ 14.5A, 10V | 2V @ 250µA | 43 nC @ 4.5 V | ±12V | 3843 pF @ 15 V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
NTPF450N80S3ZMOSFET N-CH 800V 11A TO220-3 |
958 | 2.56 |
ДобавитьНемедленный |
Datenblatt |
Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tj) | - | 450mOhm @ 5.5A, 10V | 3.8V @ 240µA | 19.3 nC @ 10 V | ±20V | 885 pF @ 400 V | - | 29.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
RJK0392DPA-WS#J53POWER TRANSISTOR, MOSFET |
2150 | 1.28 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
2SK3367-Z-E2-AZSMALL SIGNAL N-CHANNEL MOSFET |
2000 | 1.28 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
RJK0348DPA-WS#J0N-CHANNEL POWER MOSFET |
2000 | 1.28 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |