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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTBS9D0N10MC

NTBS9D0N10MC

MOSFET N-CH 100V 14A/60A TO263

onsemi

3755 3.07
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NTBS9D0N10MC

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Ta), 60A (Tc) 6V, 10V 9mOhm @ 23A, 10V 4V @ 131µA 23 nC @ 10 V ±20V 1695 pF @ 50 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF634PBF

IRF634PBF

MOSFET N-CH 250V 8.1A TO220AB

Vishay Siliconix

1893 1.83
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IRF634PBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tc) 10V 450mOhm @ 5.1A, 10V 4V @ 250µA 41 nC @ 10 V ±20V 770 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU024PBF

IRFU024PBF

MOSFET N-CH 60V 14A TO251AA

Vishay Siliconix

1272 1.84
- +

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IRFU024PBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 8.4A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF10N60DM2

STF10N60DM2

MOSFET N-CH 600V 8A TO220FP

STMicroelectronics

1498 1.89
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STF10N60DM2

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Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 530mOhm @ 4A, 10V 5V @ 250µA 15 nC @ 10 V ±25V 529 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF6785MTRPBF

IRF6785MTRPBF

MOSFET N-CH 200V 3.4A DIRECTFET

Infineon Technologies

9600 1.95
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IRF6785MTRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 3.4A (Ta), 19A (Tc) 10V 100mOhm @ 4.2A, 10V 5V @ 100µA 36 nC @ 10 V ±20V 1500 pF @ 25 V - 2.8W (Ta), 57W (Tc) -40°C ~ 150°C (TJ) Surface Mount
TK200F04N1L,LXGQ

TK200F04N1L,LXGQ

MOSFET N-CH 40V 200A TO220SM

Toshiba Semiconductor and Storage

1999 3.73
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TK200F04N1L,LXGQ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Ta) 6V, 10V 0.9mOhm @ 100A, 10V 3V @ 1mA 214 nC @ 10 V ±20V 14920 pF @ 10 V - 375W (Tc) 175°C Surface Mount
IRF840APBF-BE3

IRF840APBF-BE3

MOSFET N-CH 500V 8A TO220AB

Vishay Siliconix

1034 2.03
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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN7R6-60PS,127

PSMN7R6-60PS,127

MOSFET N-CH 60V 92A TO220AB

Nexperia USA Inc.

4829 2.05
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PSMN7R6-60PS,127

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 92A (Tc) 10V 7.8mOhm @ 25A, 10V 4V @ 1mA 38.7 nC @ 10 V ±20V 2651 pF @ 30 V - 149W (Tc) -55°C ~ 175°C (TJ) Through Hole
STD3NK80Z-1

STD3NK80Z-1

MOSFET N-CH 800V 2.5A IPAK

STMicroelectronics

2635 2.06
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STD3NK80Z-1

Datenblatt

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 800 V 2.5A (Tc) 10V 4.5Ohm @ 1.25A, 10V 4.5V @ 50µA 19 nC @ 10 V ±30V 485 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP5NK50ZFP

STP5NK50ZFP

MOSFET N-CH 500V 4.4A TO220FP

STMicroelectronics

1029 2.06
- +

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STP5NK50ZFP

Datenblatt

Tube SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 4.4A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4.5V @ 50µA 28 nC @ 10 V ±30V 535 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT66920L

AOT66920L

MOSFET N-CH 100V 22.5A/80A TO220

Alpha & Omega Semiconductor Inc.

2197 2.08
- +

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AOT66920L

Datenblatt

Tube AlphaSGT™ Active N-Channel MOSFET (Metal Oxide) 100 V 22.5A (Ta), 80A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 2500 pF @ 50 V - 8.3W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF296L

AOTF296L

MOSFET N-CH 100V 10A/41A TO220F

Alpha & Omega Semiconductor Inc.

1920 2.08
- +

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AOTF296L

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta), 41A (Tc) 6V, 10V 10mOhm @ 20A, 10V 3.4V @ 250µA 52 nC @ 10 V ±20V 2785 pF @ 50 V - 2.2W (Ta), 36.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP3682

FDP3682

MOSFET N-CH 100V 6A/32A TO220-3

onsemi

17598 2.09
- +

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FDP3682

Datenblatt

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 6A (Ta), 32A (Tc) 6V, 10V 36mOhm @ 32A, 10V 4V @ 250µA 28 nC @ 10 V ±20V 1250 pF @ 25 V - 95W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCPF380N60

FCPF380N60

MOSFET N-CH 600V 10.2A TO220F

onsemi

3284 2.10
- +

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FCPF380N60

Datenblatt

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 10.2A (Tc) 10V 380mOhm @ 5A, 10V 3.5V @ 250µA 40 nC @ 10 V ±20V 1665 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF360A70L

AOTF360A70L

MOSFET N-CH 700V 12A TO220F

Alpha & Omega Semiconductor Inc.

1561 2.10
- +

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Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 700 V 12A (Tj) 10V 360mOhm @ 6A, 10V 4V @ 250µA 22.5 nC @ 10 V ±20V 1360 pF @ 100 V - 29.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP80N06

FDP80N06

MOSFET N-CH 60V 80A TO220-3

onsemi

865 2.10
- +

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FDP80N06

Datenblatt

Tube UniFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 10mOhm @ 40A, 10V 4V @ 250µA 74 nC @ 10 V ±20V 3190 pF @ 25 V - 176W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOB20S60L

AOB20S60L

MOSFET N-CH 600V 20A TO263

Alpha & Omega Semiconductor Inc.

1115 3.39
- +

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AOB20S60L

Datenblatt

Tape & Reel (TR),Cut Tape (CT) aMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 199mOhm @ 10A, 10V 4.1V @ 250µA 19.8 nC @ 10 V ±30V 1038 pF @ 100 V - 266W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOTF286L

AOTF286L

MOSFET N-CH 80V 13.5A/56A TO220

Alpha & Omega Semiconductor Inc.

2349 2.16
- +

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AOTF286L

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 80 V 13.5A (Ta), 56A (Tc) 6V, 10V 6mOhm @ 20A, 10V 3.3V @ 250µA 63 nC @ 10 V ±20V 3142 pF @ 40 V - 2.2W (Ta), 37.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL7833PBF

IRL7833PBF

MOSFET N-CH 30V 150A TO220AB

Infineon Technologies

1970 2.20
- +

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Немедленный

IRL7833PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 3.8mOhm @ 38A, 10V 2.3V @ 250µA 47 nC @ 4.5 V ±20V 4170 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF840SPBF

IRF840SPBF

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix

1205 2.20
- +

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Немедленный

IRF840SPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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