Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NTBS9D0N10MCMOSFET N-CH 100V 14A/60A TO263 |
3755 | 3.07 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Ta), 60A (Tc) | 6V, 10V | 9mOhm @ 23A, 10V | 4V @ 131µA | 23 nC @ 10 V | ±20V | 1695 pF @ 50 V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IRF634PBFMOSFET N-CH 250V 8.1A TO220AB |
1893 | 1.83 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 8.1A (Tc) | 10V | 450mOhm @ 5.1A, 10V | 4V @ 250µA | 41 nC @ 10 V | ±20V | 770 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRFU024PBFMOSFET N-CH 60V 14A TO251AA |
1272 | 1.84 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
STF10N60DM2MOSFET N-CH 600V 8A TO220FP |
1498 | 1.89 |
ДобавитьНемедленный |
Datenblatt |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Tc) | 10V | 530mOhm @ 4A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±25V | 529 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRF6785MTRPBFMOSFET N-CH 200V 3.4A DIRECTFET |
9600 | 1.95 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.4A (Ta), 19A (Tc) | 10V | 100mOhm @ 4.2A, 10V | 5V @ 100µA | 36 nC @ 10 V | ±20V | 1500 pF @ 25 V | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | |
TK200F04N1L,LXGQMOSFET N-CH 40V 200A TO220SM |
1999 | 3.73 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 6V, 10V | 0.9mOhm @ 100A, 10V | 3V @ 1mA | 214 nC @ 10 V | ±20V | 14920 pF @ 10 V | - | 375W (Tc) | 175°C | Surface Mount | |
IRF840APBF-BE3MOSFET N-CH 500V 8A TO220AB |
1034 | 2.03 |
ДобавитьНемедленный |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±30V | 1018 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ||
PSMN7R6-60PS,127MOSFET N-CH 60V 92A TO220AB |
4829 | 2.05 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 92A (Tc) | 10V | 7.8mOhm @ 25A, 10V | 4V @ 1mA | 38.7 nC @ 10 V | ±20V | 2651 pF @ 30 V | - | 149W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
STD3NK80Z-1MOSFET N-CH 800V 2.5A IPAK |
2635 | 2.06 |
ДобавитьНемедленный |
Datenblatt |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.5A (Tc) | 10V | 4.5Ohm @ 1.25A, 10V | 4.5V @ 50µA | 19 nC @ 10 V | ±30V | 485 pF @ 25 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
STP5NK50ZFPMOSFET N-CH 500V 4.4A TO220FP |
1029 | 2.06 |
ДобавитьНемедленный |
Datenblatt |
Tube | SuperMESH™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.4A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4.5V @ 50µA | 28 nC @ 10 V | ±30V | 535 pF @ 25 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
AOT66920LMOSFET N-CH 100V 22.5A/80A TO220 |
2197 | 2.08 |
ДобавитьНемедленный |
Datenblatt |
Tube | AlphaSGT™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 22.5A (Ta), 80A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | ±20V | 2500 pF @ 50 V | - | 8.3W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
AOTF296LMOSFET N-CH 100V 10A/41A TO220F |
1920 | 2.08 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Ta), 41A (Tc) | 6V, 10V | 10mOhm @ 20A, 10V | 3.4V @ 250µA | 52 nC @ 10 V | ±20V | 2785 pF @ 50 V | - | 2.2W (Ta), 36.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
FDP3682MOSFET N-CH 100V 6A/32A TO220-3 |
17598 | 2.09 |
ДобавитьНемедленный |
Datenblatt |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 6A (Ta), 32A (Tc) | 6V, 10V | 36mOhm @ 32A, 10V | 4V @ 250µA | 28 nC @ 10 V | ±20V | 1250 pF @ 25 V | - | 95W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
FCPF380N60MOSFET N-CH 600V 10.2A TO220F |
3284 | 2.10 |
ДобавитьНемедленный |
Datenblatt |
Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.2A (Tc) | 10V | 380mOhm @ 5A, 10V | 3.5V @ 250µA | 40 nC @ 10 V | ±20V | 1665 pF @ 25 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
AOTF360A70LMOSFET N-CH 700V 12A TO220F |
1561 | 2.10 |
ДобавитьНемедленный |
Tube | aMOS5™ | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 12A (Tj) | 10V | 360mOhm @ 6A, 10V | 4V @ 250µA | 22.5 nC @ 10 V | ±20V | 1360 pF @ 100 V | - | 29.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ||
FDP80N06MOSFET N-CH 60V 80A TO220-3 |
865 | 2.10 |
ДобавитьНемедленный |
Datenblatt |
Tube | UniFET™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 10mOhm @ 40A, 10V | 4V @ 250µA | 74 nC @ 10 V | ±20V | 3190 pF @ 25 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
AOB20S60LMOSFET N-CH 600V 20A TO263 |
1115 | 3.39 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | aMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 199mOhm @ 10A, 10V | 4.1V @ 250µA | 19.8 nC @ 10 V | ±30V | 1038 pF @ 100 V | - | 266W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
AOTF286LMOSFET N-CH 80V 13.5A/56A TO220 |
2349 | 2.16 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 13.5A (Ta), 56A (Tc) | 6V, 10V | 6mOhm @ 20A, 10V | 3.3V @ 250µA | 63 nC @ 10 V | ±20V | 3142 pF @ 40 V | - | 2.2W (Ta), 37.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IRL7833PBFMOSFET N-CH 30V 150A TO220AB |
1970 | 2.20 |
ДобавитьНемедленный |
Datenblatt |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 150A (Tc) | 4.5V, 10V | 3.8mOhm @ 38A, 10V | 2.3V @ 250µA | 47 nC @ 4.5 V | ±20V | 4170 pF @ 15 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IRF840SPBFMOSFET N-CH 500V 8A D2PAK |
1205 | 2.20 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |