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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TSM4NC50CP ROG

TSM4NC50CP ROG

MOSFET N-CHANNEL 500V 4A TO252

Taiwan Semiconductor Corporation

9895 1.95
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TSM4NC50CP ROG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 4A (Tc) 10V 2.7Ohm @ 1.7A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 453 pF @ 50 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CSD17313Q2Q1T

CSD17313Q2Q1T

MOSFET N-CH 30V 5A 6WSON

Texas Instruments

2250 0.95
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CSD17313Q2Q1T

Datenblatt

Tape & Reel (TR) NexFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 3V, 8V 30mOhm @ 4A, 8V 1.8V @ 250µA 2.7 nC @ 4.5 V +10V, -8V 340 pF @ 15 V - 2.4W (Ta), 17W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPSA70R900P7SAKMA1

IPSA70R900P7SAKMA1

MOSFET N-CH 700V 6A TO251-3

Infineon Technologies

1488 0.97
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IPSA70R900P7SAKMA1

Datenblatt

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 6A (Tc) 10V 900mOhm @ 1.1A, 10V 3.5V @ 60µA 6.8 nC @ 400 V ±16V 211 pF @ 400 V - 30.5W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPS70R900P7SAKMA1

IPS70R900P7SAKMA1

MOSFET N-CH 700V 6A TO251-3

Infineon Technologies

1107 0.97
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IPS70R900P7SAKMA1

Datenblatt

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 6A (Tc) 10V 900mOhm @ 1.1A, 10V 3.5V @ 60µA 6.8 nC @ 10 V ±16V 211 pF @ 400 V - 30.5W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRFR110PBF

IRFR110PBF

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix

1235 1.05
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IRFR110PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 2.6A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMFS006N08MC

NTMFS006N08MC

MOSFET N-CH 80V 9.3A/82A 8PQFN

onsemi

3011 2.31
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NTMFS006N08MC

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 80 V 9.3A (Ta), 82A (Tc) 6V, 10V 6mOhm @ 32A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 2300 pF @ 40 V - 1W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR440DP-T1-GE3

SIR440DP-T1-GE3

MOSFET N-CH 20V 60A PPAK SO-8

Vishay Siliconix

9978 2.11
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SIR440DP-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 1.55mOhm @ 20A, 10V 2.5V @ 250µA 150 nC @ 10 V ±20V 6000 pF @ 10 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPU80R4K5P7AKMA1

IPU80R4K5P7AKMA1

MOSFET N-CH 800V 1.5A TO251-3

Infineon Technologies

2122 1.08
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IPU80R4K5P7AKMA1

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 1.5A (Tc) 10V 4.5Ohm @ 400mA, 10V 3.5V @ 200µA 4 nC @ 10 V ±20V 250 pF @ 500 V Super Junction 13W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD80R600P7ATMA1

IPD80R600P7ATMA1

MOSFET N-CH 800V 8A TO252-3

Infineon Technologies

9642 2.19
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IPD80R600P7ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 600mOhm @ 3.4A, 10V 3.5V @ 170µA 20 nC @ 10 V ±20V 570 pF @ 500 V - 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC0803LSATMA1

BSC0803LSATMA1

MOSFET N-CH 100V 10A/44A TDSON-6

Infineon Technologies

4745 1.78
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BSC0803LSATMA1

Datenblatt

Cut Tape (CT) OptiMOS™ 5 Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta), 44A (Tc) 4.5V, 10V 14.6mOhm @ 22A, 10V 2.3V @ 23µA 10 nC @ 4.5 V ±20V 1300 pF @ 50 V - 2.5W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4124DY-T1-GE3

SI4124DY-T1-GE3

MOSFET N-CH 40V 20.5A 8SO

Vishay Siliconix

4191 2.17
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SI4124DY-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 20.5A (Tc) 4.5V, 10V 7.5mOhm @ 14A, 10V 3V @ 250µA 77 nC @ 10 V ±20V 3540 pF @ 20 V - 2.5W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU120PBF

IRFU120PBF

MOSFET N-CH 100V 7.7A TO251AA

Vishay Siliconix

2980 1.11
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IRFU120PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 10V 270mOhm @ 4.6A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
STD2NC45-1

STD2NC45-1

MOSFET N-CH 450V 1.5A IPAK

STMicroelectronics

1059 1.14
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STD2NC45-1

Datenblatt

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 450 V 1.5A (Tc) 10V 4.5Ohm @ 500mA, 10V 3.7V @ 250µA 7 nC @ 10 V ±30V 160 pF @ 25 V - 30W (Tc) -65°C ~ 150°C (TJ) Through Hole
PSMN2R7-30BL,118

PSMN2R7-30BL,118

MOSFET N-CH 30V 100A D2PAK

Nexperia USA Inc.

2649 1.94
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PSMN2R7-30BL,118

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 3mOhm @ 25A, 10V 2.15V @ 1mA 66 nC @ 10 V ±20V 3954 pF @ 15 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR9014PBF

IRFR9014PBF

MOSFET P-CH 60V 5.1A DPAK

Vishay Siliconix

2985 1.16
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IRFR9014PBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RS1E321GNTB1

RS1E321GNTB1

MOSFET N-CH 30V 32A/80A 8HSOP

Rohm Semiconductor

4990 2.52
- +

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RS1E321GNTB1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 80A (Tc) 4.5V, 10V 2.1mOhm @ 32A, 10V 2.5V @ 1mA 42.8 nC @ 10 V ±20V 2850 pF @ 15 V - 3W (Ta) 150°C (TJ) Surface Mount
MCB85N06Y-TP

MCB85N06Y-TP

MOSFET N-CH 60V 85A D2PAK

Micro Commercial Co

30104 1.99
- +

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MCB85N06Y-TP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 85A (Tc) 10V 13mOhm @ 30A, 10V 2.4V @ 250µA 36 nC @ 10 V ±20V 2498 pF @ 25 V - 85W -55°C ~ 175°C (TJ) Surface Mount
STP3NK50Z

STP3NK50Z

MOSFET N-CH 500V 2.3A TO220AB

STMicroelectronics

8306 0.84
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STP3NK50Z

Datenblatt

Tube SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 2.3A (Tc) 10V 3.3Ohm @ 1.15A, 10V 4.5V @ 50µA 15 nC @ 10 V ±30V 280 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFH5007TRPBF

IRFH5007TRPBF

MOSFET N-CH 75V 17A/100A 8PQFN

Infineon Technologies

12000 2.42
- +

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Немедленный

IRFH5007TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 17A (Ta), 100A (Tc) 10V 5.9mOhm @ 50A, 10V 4V @ 150µA 98 nC @ 10 V ±20V 4290 pF @ 25 V - 3.6W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR210PBF

IRFR210PBF

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix

2970 1.23
- +

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Немедленный

IRFR210PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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