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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TSM033NB04CR RLG

TSM033NB04CR RLG

MOSFET N-CH 40V 21A/121A 8PDFN

Taiwan Semiconductor Corporation

3650 3.08
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TSM033NB04CR RLG

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 121A (Tc) 10V 3.3mOhm @ 21A, 10V 4V @ 250µA 77 nC @ 10 V ±20V 5022 pF @ 20 V - 3.1W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7108DN-T1-E3

SI7108DN-T1-E3

MOSFET N-CH 20V 14A PPAK1212-8

Vishay Siliconix

2739 2.09
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SI7108DN-T1-E3

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Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 14A (Ta) 4.5V, 10V 4.9mOhm @ 22A, 10V 2V @ 250µA 30 nC @ 4.5 V ±16V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF830APBF

IRF830APBF

MOSFET N-CH 500V 5A TO220AB

Vishay Siliconix

7518 1.64
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IRF830APBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 620 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF2HNK60Z

STF2HNK60Z

MOSFET N-CH 600V 2A TO220FP

STMicroelectronics

1188 1.65
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STF2HNK60Z

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Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.8Ohm @ 1A, 10V 4.5V @ 50µA 15 nC @ 10 V ±30V 280 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD020PBF

IRFD020PBF

MOSFET N-CH 50V 2.4A 4DIP

Vishay Siliconix

4991 1.67
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IRFD020PBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 50 V 2.4A (Tc) 10V 100mOhm @ 1.4A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 400 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9110PBF

IRFU9110PBF

MOSFET P-CH 100V 3.1A TO251AA

Vishay Siliconix

1734 1.67
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IRFU9110PBF

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Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) 10V 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF55N06

FDPF55N06

MOSFET N-CH 60V 55A TO220F

onsemi

1933 1.68
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FDPF55N06

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Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 10V 22mOhm @ 27.5A, 10V 4V @ 250µA 37 nC @ 10 V ±25V 1510 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP5NK50Z

STP5NK50Z

MOSFET N-CH 500V 4.4A TO220AB

STMicroelectronics

1980 1.69
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STP5NK50Z

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Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 500 V 4.4A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4.5V @ 50µA 28 nC @ 10 V ±30V 535 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLZ14SPBF

IRLZ14SPBF

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix

949 1.70
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IRLZ14SPBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR5305TRL

AUIRFR5305TRL

MOSFET P-CH 55V 31A DPAK

Infineon Technologies

23481 3.46
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AUIRFR5305TRL

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Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC042NE7NS3GATMA1

BSC042NE7NS3GATMA1

MOSFET N-CH 75V 19A/100A TDSON

Infineon Technologies

32506 3.52
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BSC042NE7NS3GATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 19A (Ta), 100A (Tc) 10V 4.2mOhm @ 50A, 10V 3.8V @ 91µA 69 nC @ 10 V ±20V 4800 pF @ 37.5 V - 2.5W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP24NF10

STP24NF10

MOSFET N-CH 100V 26A TO220AB

STMicroelectronics

2804 1.75
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STP24NF10

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Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 100 V 26A (Tc) 10V 60mOhm @ 12A, 10V 4V @ 250µA 41 nC @ 10 V ±20V 870 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU9210PBF

IRFU9210PBF

MOSFET P-CH 200V 1.9A TO251AA

Vishay Siliconix

2789 1.75
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IRFU9210PBF

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Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 1.9A (Tc) 10V 3Ohm @ 1.1A, 10V 4V @ 250µA 8.9 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF6N60M2

STF6N60M2

MOSFET N-CH 600V 4.5A TO220FP

STMicroelectronics

1889 1.75
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STF6N60M2

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Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Ta) 10V 1.2Ohm @ 2.25A, 10V 4V @ 250µA 8 nC @ 10 V ±25V 232 pF @ 100 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL1404ZSTRLPBF

IRL1404ZSTRLPBF

MOSFET N-CH 40V 75A D2PAK

Infineon Technologies

7675 2.95
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IRL1404ZSTRLPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR9310PBF

IRFR9310PBF

MOSFET P-CH 400V 1.8A DPAK

Vishay Siliconix

1895 1.76
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IRFR9310PBF

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Tube - Active P-Channel MOSFET (Metal Oxide) 400 V 1.8A (Tc) 10V 7Ohm @ 1.1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 270 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOB190A60CL

AOB190A60CL

MOSFET N-CH 600V 20A TO263

Alpha & Omega Semiconductor Inc.

3200 2.97
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Tape & Reel (TR),Cut Tape (CT) aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 7.6A, 10V 4.6V @ 250µA 34 nC @ 10 V ±30V 1935 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R210CFD7ATMA1

IPD60R210CFD7ATMA1

MOSFET N CH

Infineon Technologies

4996 3.21
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IPD60R210CFD7ATMA1

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Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 210mOhm @ 4.9A, 10V 4.5V @ 240µA 23 nC @ 10 V ±20V 1015 pF @ 400 V - 64W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS039N08B

FDMS039N08B

MOSFET N-CH 80V 19.4A/100A 8PQFN

onsemi

12863 2.56
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FDMS039N08B

Datenblatt

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 19.4A (Ta), 100A (Tc) 10V 3.9mOhm @ 50A, 10V 4.5V @ 250µA 100 nC @ 10 V ±20V 7600 pF @ 40 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP4NK60Z

STP4NK60Z

MOSFET N-CH 600V 4A TO220AB

STMicroelectronics

1012 1.80
- +

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Немедленный

STP4NK60Z

Datenblatt

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2Ohm @ 2A, 10V 4.5V @ 50µA 26 nC @ 10 V ±30V 510 pF @ 25 V - 70W (Tc) 150°C (TJ) Through Hole
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