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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR9110PBF

IRFR9110PBF

MOSFET P-CH 100V 3.1A DPAK

Vishay Siliconix

1125 1.23
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IRFR9110PBF

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Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) 10V 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPSA70R450P7SAKMA1

IPSA70R450P7SAKMA1

MOSFET N-CH 700V 10A TO251-3

Infineon Technologies

3066 1.25
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IPSA70R450P7SAKMA1

Datenblatt

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 10A (Tc) 10V 450mOhm @ 2.3A, 10V 3.5V @ 120µA 13.1 nC @ 400 V ±16V 424 pF @ 400 V - 50W (Tc) -40°C ~ 150°C (TJ) Through Hole
STB55NF06LT4

STB55NF06LT4

MOSFET N-CH 60V 55A D2PAK

STMicroelectronics

2947 2.34
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STB55NF06LT4

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Tape & Reel (TR),Cut Tape (CT) STripFET™ II Active N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 10V, 5V 18mOhm @ 27.5A, 10V 4.7V @ 250µA 37 nC @ 4.5 V ±16V 1700 pF @ 25 V - 95W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN0R9-30YLDX

PSMN0R9-30YLDX

MOSFET N-CH 30V 300A LFPAK56

Nexperia USA Inc.

13200 2.62
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PSMN0R9-30YLDX

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 300A (Tc) 4.5V, 10V 0.87mOhm @ 25A, 10V 2.2V @ 1mA 109 nC @ 10 V ±20V 7668 pF @ 15 V - 291W -55°C ~ 150°C (TJ) Surface Mount
NTMYS011N04CTWG

NTMYS011N04CTWG

MOSFET N-CH 40V 13A/35A 4LFPAK

onsemi

5534 2.83
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NTMYS011N04CTWG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 13A (Ta), 35A (Tc) 10V 12mOhm @ 10A, 10V 3.5V @ 20µA 7.9 nC @ 10 V ±20V 420 pF @ 25 V - 3.8W (Ta), 28W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOY66923

AOY66923

MOSFET N-CH 100V 16.5/58A TO251B

Alpha & Omega Semiconductor Inc.

6166 1.34
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AOY66923

Datenblatt

Tube AlphaSGT™ Active N-Channel MOSFET (Metal Oxide) 100 V 16.5A (Ta), 58A (Tc) 4.5V, 10V 11mOhm @ 20A, 10V 2.6V @ 250µA 35 nC @ 10 V ±20V 1725 pF @ 50 V - 6.2W (Ta), 73W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF10N20C

FQPF10N20C

MOSFET N-CH 200V 9.5A TO220F

onsemi

1651 1.34
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FQPF10N20C

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) 10V 360mOhm @ 4.75A, 10V 4V @ 250µA 26 nC @ 10 V ±30V 510 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFRC20PBF

IRFRC20PBF

MOSFET N-CH 600V 2A DPAK

Vishay Siliconix

7305 1.35
- +

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IRFRC20PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6795MTRPBF

IRF6795MTRPBF

MOSFET N-CH 25V 32A DIRECTFET

Infineon Technologies

4800 2.76
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IRF6795MTRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 160A (Tc) 4.5V, 10V 1.8mOhm @ 32A, 10V 2.35V @ 100µA 53 nC @ 4.5 V ±20V 4280 pF @ 13 V - 2.8W (Ta), 75W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRL510PBF

IRL510PBF

MOSFET N-CH 100V 5.6A TO220AB

Vishay Siliconix

680 1.41
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IRL510PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 4V, 5V 540mOhm @ 3.4A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
STU2N80K5

STU2N80K5

MOSFET N-CH 800V 2A IPAK

STMicroelectronics

1011 1.41
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STU2N80K5

Datenblatt

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 4.5Ohm @ 1A, 10V 5V @ 100µA 9.5 nC @ 10 V 30V 105 pF @ 100 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
TPHR9003NL,L1Q

TPHR9003NL,L1Q

MOSFET N-CH 30V 60A 8SOP

Toshiba Semiconductor and Storage

9900 2.11
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TPHR9003NL,L1Q

Datenblatt

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 0.9mOhm @ 30A, 10V 2.3V @ 1mA 74 nC @ 10 V ±20V 6900 pF @ 15 V - 1.6W (Ta), 78W (Tc) 150°C (TJ) Surface Mount
PHP29N08T,127

PHP29N08T,127

MOSFET N-CH 75V 27A TO220AB

Nexperia USA Inc.

4856 1.43
- +

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PHP29N08T,127

Datenblatt

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 27A (Tc) 11V 50mOhm @ 14A, 11V 5V @ 2mA 19 nC @ 10 V ±30V 810 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU214PBF

IRFU214PBF

MOSFET N-CH 250V 2.2A TO251AA

Vishay Siliconix

1898 1.45
- +

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IRFU214PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Tc) 10V 2Ohm @ 1.3A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF6775MTRPBF

IRF6775MTRPBF

MOSFET N-CH 150V 4.9A DIRECTFET

Infineon Technologies

15331 2.96
- +

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IRF6775MTRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 4.9A (Ta), 28A (Tc) 10V 56mOhm @ 5.6A, 10V 5V @ 100µA 36 nC @ 10 V ±20V 1411 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF830ASTRLPBF

IRF830ASTRLPBF

MOSFET N-CH 500V 5A D2PAK

Vishay Siliconix

4472 2.50
- +

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IRF830ASTRLPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 620 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF40B207

IRF40B207

MOSFET N-CH 40V 95A TO220AB

Infineon Technologies

2705 1.51
- +

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IRF40B207

Datenblatt

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) 6V, 10V 4.5mOhm @ 57A, 10V 3.9V @ 50µA 68 nC @ 10 V ±20V 2110 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR420APBF

IRFR420APBF

MOSFET N-CH 500V 3.3A DPAK

Vishay Siliconix

4050 1.53
- +

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IRFR420APBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 3.3A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK42A12N1,S4X

TK42A12N1,S4X

MOSFET N-CH 120V 42A TO220SIS

Toshiba Semiconductor and Storage

1082 1.56
- +

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TK42A12N1,S4X

Datenblatt

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 42A (Tc) 10V 9.4mOhm @ 21A, 10V 4V @ 1mA 52 nC @ 10 V ±20V 3100 pF @ 60 V - 35W (Tc) 150°C (TJ) Through Hole
STD2HNK60Z-1

STD2HNK60Z-1

MOSFET N-CH 600V 2A IPAK

STMicroelectronics

3118 1.57
- +

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Немедленный

STD2HNK60Z-1

Datenblatt

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.8Ohm @ 1A, 10V 4.5V @ 50µA 15 nC @ 10 V ±30V 280 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
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