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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTA230N075T2

IXTA230N075T2

MOSFET N-CH 75V 230A TO263

IXYS

150 7.10
- +

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IXTA230N075T2

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Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 230A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 178 nC @ 10 V ±20V 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTQ110N10P

IXTQ110N10P

MOSFET N-CH 100V 110A TO3P

IXYS

3427 7.14
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IXTQ110N10P

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Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 15mOhm @ 500mA, 10V 5V @ 250µA 110 nC @ 10 V ±20V 3550 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQL50N40

FQL50N40

MOSFET N-CH 400V 50A TO264-3

Fairchild Semiconductor

338 7.16
- +

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FQL50N40

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 50A (Tc) 10V 75mOhm @ 25A, 10V 5V @ 250µA 210 nC @ 10 V ±30V 7500 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTK102N30P

IXTK102N30P

MOSFET N-CH 300V 102A TO264

IXYS

2165 15.69
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IXTK102N30P

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Tube Polar Active N-Channel MOSFET (Metal Oxide) 300 V 102A (Tc) 10V 33mOhm @ 500mA, 10V 5V @ 500µA 224 nC @ 10 V ±20V 7500 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMW65R057M1HXKSA1

IMW65R057M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies

2038 15.77
- +

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IMW65R057M1HXKSA1

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Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 35A (Tc) 18V 74mOhm @ 16.7A, 18V 5.7V @ 5mA 28 nC @ 18 V +20V, -2V 930 pF @ 400 V - 133W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT6025BVRG

APT6025BVRG

MOSFET N-CH 600V 25A TO247

Microchip Technology

3243 15.95
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APT6025BVRG

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Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) - 250mOhm @ 500mA, 10V 4V @ 1mA 275 nC @ 10 V - 5160 pF @ 25 V - - - Through Hole
NTE454

NTE454

MOSFET-DUAL GATE N-CH

NTE Electronics, Inc

3380 16.36
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NTE454

Datenblatt

Bag - Active N-Channel MOSFET (Metal Oxide) 20 V 60mA - - - - - 3300 pF @ 15 V Standard 1.2W -65°C ~ 175°C (TJ) Through Hole
2N6760TXV

2N6760TXV

5.5A, 400V, 1OHM, N-CHANNEL

Harris Corporation

471 7.76
- +

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2N6760TXV

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.5A, 10V 4V @ 1mA - ±20V 800 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH44P15T

IXTH44P15T

MOSFET P-CH 150V 44A TO247

IXYS

3128 7.94
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IXTH44P15T

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Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 150 V 44A (Tc) 10V 65mOhm @ 500mA, 10V 4V @ 250µA 175 nC @ 10 V ±15V 13400 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMZA65R057M1HXKSA1

IMZA65R057M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies

3723 16.62
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IMZA65R057M1HXKSA1

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Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 35A (Tc) 18V 74mOhm @ 16.7A, 18V 5.7V @ 5mA 28 nC @ 18 V +20V, -2V 930 pF @ 400 V - 133W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK2371-A

2SK2371-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

302 8.10
- +

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2SK2371-A

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
2SK1285-AZ

2SK1285-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

700 8.28
- +

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2SK1285-AZ

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
TW048N65C,S1F

TW048N65C,S1F

G3 650V SIC-MOSFET TO-247 48MOH

Toshiba Semiconductor and Storage

2174 17.09
- +

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TW048N65C,S1F

Datenblatt

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 40A (Tc) 18V 65mOhm @ 20A, 18V 5V @ 1.6mA 41 nC @ 18 V +25V, -10V 1362 pF @ 400 V - 132W (Tc) 175°C Through Hole
NTE464

NTE464

MOSFET-P CHANNEL AMP/SW

NTE Electronics, Inc

3957 17.84
- +

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NTE464

Datenblatt

Bag - Active P-Channel MOSFET (Metal Oxide) 25 V 10A 10V 600Ohm @ 0A, 10V 5V @ 10A - ±30V 5000 pF @ 10 V Standard 800mW (Tc) 175°C (TJ) Through Hole
IRF362

IRF362

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier

160 9.17
- +

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IRF362

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
APT38F80B2

APT38F80B2

MOSFET N-CH 800V 41A T-MAX

Microchip Technology

2446 19.14
- +

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APT38F80B2

Datenblatt

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 41A (Tc) 10V 240mOhm @ 20A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8070 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH60N20L2

IXTH60N20L2

MOSFET N-CH 200V 60A TO247

IXYS

3261 19.77
- +

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IXTH60N20L2

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Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 45mOhm @ 30A, 10V 4.5V @ 250µA 255 nC @ 10 V ±20V 10500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDH50N50

FDH50N50

MOSFET N-CH 500V 48A TO247-3

Fairchild Semiconductor

761 10.37
- +

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FDH50N50

Datenblatt

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 48A (Tc) 10V 105mOhm @ 24A, 10V 5V @ 250µA 137 nC @ 10 V ±30V 6460 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
4AM14

4AM14

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

202 11.45
- +

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4AM14

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IXFR44N80P

IXFR44N80P

MOSFET N-CH 800V 25A ISOPLUS247

IXYS

2481 22.13
- +

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IXFR44N80P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 25A (Tc) 10V 200mOhm @ 22A, 10V 5V @ 8mA 200 nC @ 10 V ±30V 12000 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
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