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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTP14N60P

IXTP14N60P

MOSFET N-CH 600V 14A TO220AB

IXYS

3056 4.71
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IXTP14N60P

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Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 550mOhm @ 7A, 10V 5.5V @ 250µA 36 nC @ 10 V ±30V 2500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK1636STR-E

2SK1636STR-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

940 4.73
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2SK1636STR-E

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2SJ555-90-E

2SJ555-90-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

347 4.76
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RFG50N05

RFG50N05

N-CHANNEL POWER MOSFET

Harris Corporation

145 4.82
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RFG50N05

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Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 50A (Tc) 10V 22mOhm @ 50A, 10V 4V @ 250nA 160 nC @ 20 V ±20V - - 132W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6055VNZ4C13

R6055VNZ4C13

600V 55A TO-247, PRESTOMOS WITH

Rohm Semiconductor

2179 12.31
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R6055VNZ4C13

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 55A (Tc) 10V, 15V 71mOhm @ 16A, 15V 6.5V @ 1.5mA 80 nC @ 10 V ±30V 3700 pF @ 100 V - 543W (Tc) 150°C (TJ) Through Hole
IXFT340N075T2

IXFT340N075T2

MOSFET N-CH 75V 340A TO268

IXYS

2146 12.31
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IXFT340N075T2

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Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 340A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 3mA 300 nC @ 10 V - 19000 pF @ 25 V - 935W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RJL5014DPP-00#T2

RJL5014DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

788 5.03
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2SK1157-E

2SK1157-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

339 5.03
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2SK1157-E

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FQA15N70

FQA15N70

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

379 5.17
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FQA15N70

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 700 V 15A (Tc) 10V 560mOhm @ 7.5A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 3630 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2387

NTE2387

MOSFET N-CHANNEL 800V 4.1A TO220

NTE Electronics, Inc

2873 13.07
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NTE2387

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Bag - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQH35N40

FQH35N40

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

846 5.34
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FQH35N40

Datenblatt

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 400 V 35A (Tc) 10V 105mOhm @ 17.5A, 10V 5V @ 250µA 140 nC @ 10 V ±30V 5600 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK2372(2)-A

2SK2372(2)-A

DISCRETE / POWER MOSFET

Renesas Electronics America Inc

171 5.64
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APT10M19SVRG

APT10M19SVRG

MOSFET N-CH 100V 75A D3PAK

Microchip Technology

2536 13.72
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APT10M19SVRG

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Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) - 19mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 6120 pF @ 25 V - - - Surface Mount
2SK3060-Z-E1-AZ

2SK3060-Z-E1-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc

1000 5.80
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2SK3060-Z-E1-AZ

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2SK2370(2)-A

2SK2370(2)-A

N-CHANNEL SWITCHING POWER MOSFET

Renesas Electronics America Inc

106 6.04
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IXFT140N20X3HV

IXFT140N20X3HV

MOSFET N-CH 200V 140A TO268HV

IXYS

2323 14.46
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IXFT140N20X3HV

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Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 140A (Tc) 10V 9.6mOhm @ 70A, 10V 4.5V @ 4mA 127 nC @ 10 V ±20V 7660 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFM10N50

RFM10N50

N-CHANNEL POWER MOSFET

Harris Corporation

143 6.45
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RFM10N50

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Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 600mOhm @ 5A, 10V 4V @ 1mA - ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFAF52

IRFAF52

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier

172 6.53
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IRFAF52

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IXFR44N50P

IXFR44N50P

MOSFET N-CH 500V 24A ISOPLUS247

IXYS

2014 14.91
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IXFR44N50P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 150mOhm @ 22A, 10V 5V @ 4mA 98 nC @ 10 V ±30V 5440 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK5020DPK01-E

RJK5020DPK01-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

559 6.57
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