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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI4774DY-T1-GE3

SI4774DY-T1-GE3

MOSFET N-CHANNEL 30V 16A 8SO

Vishay Siliconix

131 0.39
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SI4774DY-T1-GE3

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Tape & Reel (TR),Cut Tape (CT) SkyFET®, TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 9.5mOhm @ 10A, 10V 2.3V @ 1mA 14.3 nC @ 4.5 V ±20V 1025 pF @ 15 V Schottky Diode (Body) 5W (Tc) -55°C ~ 150°C (TA) Surface Mount
RV2C002UNT2L

RV2C002UNT2L

MOSFET N-CH 20V 180MA DFN1006-3

Rohm Semiconductor

593 0.48
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RV2C002UNT2L

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 180mA (Ta) 1.2V, 4.5V 2Ohm @ 150mA, 4.5V 1V @ 100µA - ±10V 12 pF @ 10 V - 100mW (Ta) 150°C (TJ) Surface Mount
SSM3K59CTB,L3F

SSM3K59CTB,L3F

MOSFET N-CH 40V 2A CST3B

Toshiba Semiconductor and Storage

591 0.40
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SSM3K59CTB,L3F

Datenblatt

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 40 V 2A (Ta) 1.8V, 8V 215mOhm @ 1A, 8V 1.2V @ 1mA 1.1 nC @ 4.2 V ±12V 130 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3J36FS,LF

SSM3J36FS,LF

MOSFET P-CH 20V 330MA SSM

Toshiba Semiconductor and Storage

63173 0.30
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SSM3J36FS,LF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active P-Channel MOSFET (Metal Oxide) 20 V 330mA (Ta) 1.5V, 4.5V 1.31Ohm @ 100mA, 4.5V 1V @ 1mA 1.2 nC @ 4 V ±8V 43 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
BSS84

BSS84

-60, -0.15, SINGLE P-CHANNEL

Taiwan Semiconductor Corporation

2722 0.42
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BSS84

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 150mA (Ta) 4.5V, 10V 8Ohm @ 150mA, 10V 2V @ 250µA 1.9 nC @ 10 V ±20V 37 pF @ 30 V - 357mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMV28ENER

PMV28ENER

PMV28ENE/SOT23/TO-236AB

Nexperia USA Inc.

548 0.41
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PMV28ENER

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 4.4A (Ta) 4.5V, 10V 37mOhm @ 4.4A, 10V 2.5V @ 250µA 8 nC @ 10 V ±20V 266 pF @ 15 V - 660mW (Ta), 8.3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SSM3J118TU(TE85L)

SSM3J118TU(TE85L)

MOSFET P-CH 30V 1.4A UFM

Toshiba Semiconductor and Storage

455 0.41
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SSM3J118TU(TE85L)

Datenblatt

Tape & Reel (TR),Cut Tape (CT) U-MOSII Active P-Channel MOSFET (Metal Oxide) 30 V 1.4A (Ta) 4V, 10V 240mOhm @ 650mA, 10V - - ±20V 137 pF @ 15 V - 500mW (Ta) 150°C (TJ) Surface Mount
PMV13XNEAR

PMV13XNEAR

PMV13XNEA - 20 V, N-CHANNEL TREN

Nexperia USA Inc.

342 0.41
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PMV13XNEAR

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Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 20 V 7.3A (Ta) 2.5V, 8V 15mOhm @ 7.3A, 8V 1.3V @ 250µA 15 nC @ 4.5 V ±12V 931 pF @ 10 V - 610mW (Ta), 8.3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RUF020N02TL

RUF020N02TL

MOSFET N-CH 20V 2A TUMT3

Rohm Semiconductor

417 0.43
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RUF020N02TL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.5V, 4.5V 105mOhm @ 2A, 4.5V 1V @ 1mA 2 nC @ 4.5 V ±10V 180 pF @ 10 V - 320mW (Ta) 150°C (TJ) Surface Mount
SSM6K518NU,LF

SSM6K518NU,LF

MOSFET N-CH 20V 6A 6UDFNB

Toshiba Semiconductor and Storage

324 0.43
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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.5V, 4.5V 33mOhm @ 4A, 4.5V 1V @ 1mA 3.6 nC @ 4.5 V ±8V 410 pF @ 10 V - 1.25W (Ta) 150°C Surface Mount
SSM6K517NU,LF

SSM6K517NU,LF

MOSFET N-CH 30V 6A 6UDFNB

Toshiba Semiconductor and Storage

219 0.43
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SSM6K517NU,LF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 1.8V, 4.5V 39.1mOhm @ 2A, 4.5V 1V @ 1mA 3.2 nC @ 4.5 V +12V, -8V 310 pF @ 15 V - 1.25W (Ta) 150°C Surface Mount
AOTS21311C

AOTS21311C

MOSFET P-CH 30V 5.9A 6TSOP

Alpha & Omega Semiconductor Inc.

152 0.43
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AOTS21311C

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 5.9A (Ta) 4.5V, 10V 45mOhm @ 5.9A, 10V 2.2V @ 250µA 26 nC @ 10 V ±20V 720 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RHU002N06T106

RHU002N06T106

MOSFET N-CH 60V 200MA UMT3

Rohm Semiconductor

403 0.44
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RHU002N06T106

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4V, 10V 2.4Ohm @ 200mA, 10V - 4.4 nC @ 10 V ±20V 15 pF @ 10 V - 200mW (Ta) 150°C (TJ) Surface Mount
SSM3J114TU(TE85L)

SSM3J114TU(TE85L)

MOSFET P-CH 20V 1.8A UFM

Toshiba Semiconductor and Storage

293 0.44
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SSM3J114TU(TE85L)

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.8A (Ta) 1.5V, 4V 149mOhm @ 600mA, 4V 1V @ 1mA 7.7 nC @ 4 V ±8V 331 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SI8465DB-T2-E1

SI8465DB-T2-E1

MOSFET P-CH 20V 4MICROFOOT

Vishay Siliconix

490 0.45
- +

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SI8465DB-T2-E1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) 2.5V, 4.5V 104mOhm @ 1.5A, 4.5V 1.5V @ 250µA 18 nC @ 10 V ±12V 450 pF @ 10 V - 780mW (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8824EDB-T2-E1

SI8824EDB-T2-E1

MOSFET N-CH 20V 2.1A MICROFOOT

Vishay Siliconix

188 0.45
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Немедленный

SI8824EDB-T2-E1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 2.1A (Ta) 1.2V, 4.5V 75mOhm @ 1A, 4.5V 800mV @ 250µA 6 nC @ 4.5 V ±5V 400 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMPB20XNEAZ

PMPB20XNEAZ

MOSFET N-CH 20V 7.5A DFN2020MD-6

Nexperia USA Inc.

176 0.45
- +

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Немедленный

PMPB20XNEAZ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 20 V 7.5A (Ta) 2.5V, 4.5V 20mOhm @ 7.5A, 4.5V 1.25V @ 250µA 15 nC @ 4.5 V ±12V 930 pF @ 10 V - 460mW (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RSR030N06TL

RSR030N06TL

MOSFET N-CH 60V 3A TSMT3

Rohm Semiconductor

116 0.45
- +

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Немедленный

RSR030N06TL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 3A (Ta) 4V, 10V 85mOhm @ 3A, 10V 2.5V @ 1mA - ±20V 380 pF @ 10 V - 540mW (Ta) 150°C (TJ) Surface Mount
PMT560ENEAX

PMT560ENEAX

MOSFET N-CH 100V 1.1A SOT223

Nexperia USA Inc.

294 0.46
- +

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Немедленный

PMT560ENEAX

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 1.1A (Ta) 4.5V, 10V 715mOhm @ 1.1A, 10V 2.7V @ 250µA 4.4 nC @ 10 V ±20V 112 pF @ 50 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SSM3K341TU,LF

SSM3K341TU,LF

MOSFET N-CH 60V 6A UFM

Toshiba Semiconductor and Storage

3388 0.46
- +

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Немедленный

SSM3K341TU,LF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta) 4V, 10V 36mOhm @ 4A, 10V 2.5V @ 100µA 9.3 nC @ 10 V ±20V 550 pF @ 10 V - 1.8W (Ta) 175°C Surface Mount
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