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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPAN80R450P7XKSA1

IPAN80R450P7XKSA1

MOSFET N-CH 800V 11A TO220-3-31

Infineon Technologies

145 2.97
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IPAN80R450P7XKSA1

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Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 450mOhm @ 4.5A, 10V 3.5V @ 220µA 24 nC @ 10 V ±20V 770 pF @ 500 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP141NF55

STP141NF55

MOSFET N-CH 55V 80A TO220AB

STMicroelectronics

2190 2.98
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STP141NF55

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Tube STripFET™ II Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 40A, 10V 4V @ 250µA 142 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFBF30PBF

IRFBF30PBF

MOSFET N-CH 900V 3.6A TO220AB

Vishay Siliconix

980 3.01
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IRFBF30PBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP650N80Z

FCP650N80Z

MOSFET N-CH 800V 10A TO220

onsemi

574 3.02
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FCP650N80Z

Datenblatt

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 650mOhm @ 4A, 10V 4.5V @ 800µA 35 nC @ 10 V ±20V 1565 pF @ 100 V - 162W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP085N10A-F102

FDP085N10A-F102

MOSFET N-CH 100V 96A TO220-3

onsemi

2200 3.03
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FDP085N10A-F102

Datenblatt

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 96A (Tc) 10V 8.5mOhm @ 96A, 10V 4V @ 250µA 40 nC @ 10 V ±20V 2695 pF @ 50 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N03S4L03AKSA1

IPP80N03S4L03AKSA1

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies

560 3.08
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IPP80N03S4L03AKSA1

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 2.7mOhm @ 80A, 10V 2.2V @ 90µA 140 nC @ 10 V ±16V 9750 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI630GPBF

IRFI630GPBF

MOSFET N-CH 200V 5.9A TO220-3

Vishay Siliconix

580 3.09
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IRFI630GPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 5.9A (Tc) 10V 400mOhm @ 3.5A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6006JNXC7G

R6006JNXC7G

MOSFET N-CH 600V 6A TO220FM

Rohm Semiconductor

894 3.12
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R6006JNXC7G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 15V 936mOhm @ 3A, 15V 7V @ 800µA 15.5 nC @ 15 V ±30V 410 pF @ 100 V - 43W (Tc) 150°C (TJ) Through Hole
HUF75344P3

HUF75344P3

MOSFET N-CH 55V 75A TO220-3

onsemi

201 3.13
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HUF75344P3

Datenblatt

Tube UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 285W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCP165N65S3

FCP165N65S3

MOSFET N-CH 650V 19A TO220-3

onsemi

736 3.15
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FCP165N65S3

Datenblatt

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 165mOhm @ 9.5A, 10V 4.5V @ 1.9mA 39 nC @ 10 V ±30V 1500 pF @ 400 V - 154W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN3R9-60PSQ

PSMN3R9-60PSQ

MOSFET N-CH 60V 130A TO220AB

Nexperia USA Inc.

3323 3.15
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PSMN3R9-60PSQ

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 130A (Tc) 10V 3.9mOhm @ 25A, 10V 4V @ 1mA 103 nC @ 10 V ±20V 5600 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA1R6N50D2

IXTA1R6N50D2

MOSFET N-CH 500V 1.6A TO263

IXYS

2486 3.16
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IXTA1R6N50D2

Datenblatt

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 1.6A (Tc) 10V 2.3Ohm @ 800mA, 0V - 23.7 nC @ 5 V ±20V 645 pF @ 25 V Depletion Mode 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RCX450N20

RCX450N20

MOSFET N-CH 200V 45A TO220FM

Rohm Semiconductor

157 3.18
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RCX450N20

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 45A (Tc) 10V 55mOhm @ 22.5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 4200 pF @ 25 V - 2.23W (Ta), 40W (Tc) 150°C (TJ) Through Hole
IRFB9N60APBF

IRFB9N60APBF

MOSFET N-CH 600V 9.2A TO220AB

Vishay Siliconix

990 3.22
- +

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IRFB9N60APBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
STFH24N60M2

STFH24N60M2

MOSFET N-CH 600V 18A TO220FP

STMicroelectronics

920 3.24
- +

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STFH24N60M2

Datenblatt

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 9A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 1060 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI9634GPBF

IRFI9634GPBF

MOSFET P-CH 250V 4.1A TO220-3

Vishay Siliconix

2014 3.24
- +

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IRFI9634GPBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 250 V 4.1A (Tc) 10V 1Ohm @ 2.5A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 680 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN3R3-60PLQ

PSMN3R3-60PLQ

MOSFET N-CH 60V 130A TO220AB

Nexperia USA Inc.

3935 3.31
- +

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PSMN3R3-60PLQ

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 130A (Tc) 4.5V, 10V 3.4mOhm @ 25A, 10V 2.1V @ 1mA 95 nC @ 5 V ±20V 10115 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOTF160A60L

AOTF160A60L

MOSFET N-CH 600V 24A TO220F

Alpha & Omega Semiconductor Inc.

243 3.40
- +

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AOTF160A60L

Datenblatt

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tj) 10V 160mOhm @ 12A, 10V 3.6V @ 250µA 46 nC @ 10 V ±20V 2340 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF16N65M5

STF16N65M5

MOSFET N-CH 650V 12A TO220FP

STMicroelectronics

1048 3.41
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Немедленный

STF16N65M5

Datenblatt

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 299mOhm @ 6A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 1250 pF @ 100 V - 25W (Tc) 150°C (TJ) Through Hole
R6020ENX

R6020ENX

MOSFET N-CH 600V 20A TO220FM

Rohm Semiconductor

3583 3.66
- +

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Немедленный

R6020ENX

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 10A, 10V 4V @ 1mA 60 nC @ 10 V ±20V 1400 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
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