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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK380A65Y,S4X

TK380A65Y,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

200 1.91
- +

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TK380A65Y,S4X

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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 9.7A (Tc) 10V 380mOhm @ 4.9A, 10V 4V @ 360µA 20 nC @ 10 V ±30V 590 pF @ 300 V - 30W (Tc) 150°C Through Hole
IRFBG20PBF-BE3

IRFBG20PBF-BE3

MOSFET N-CH 1000V 1.4A TO220AB

Vishay Siliconix

902 1.92
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 1.4A (Tc) 10V 11Ohm @ 840mA, 10V 4V @ 250µA 38 nC @ 10 V ±20V 500 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN0550N3-G

VN0550N3-G

MOSFET N-CH 500V 50MA TO92-3

Microchip Technology

369 1.93
- +

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VN0550N3-G

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Bag - Active N-Channel MOSFET (Metal Oxide) 500 V 50mA (Tj) 5V, 10V 60Ohm @ 50mA, 10V 4V @ 1mA - ±20V 55 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP600N60Z

FCP600N60Z

MOSFET N-CH 600V 7.4A TO220-3

onsemi

372 1.93
- +

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FCP600N60Z

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Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 7.4A (Tc) 10V 600mOhm @ 3.7A, 10V 3.5V @ 250µA 26 nC @ 10 V ±20V 1120 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD18510Q5BT

CSD18510Q5BT

MOSFET N-CH 40V 300A 8VSON

Texas Instruments

319 2.87
- +

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CSD18510Q5BT

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Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 4.5V, 10V 0.96mOhm @ 32A, 10V 2.3V @ 250µA 153 nC @ 10 V ±20V 11400 pF @ 20 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP12N50E-GE3

SIHP12N50E-GE3

MOSFET N-CH 500V 10.5A TO220AB

Vishay Siliconix

998 1.95
- +

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SIHP12N50E-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 10.5A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 886 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD320PBF

IRFD320PBF

MOSFET N-CH 400V 490MA 4DIP

Vishay Siliconix

484 1.95
- +

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Немедленный

IRFD320PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 490mA (Ta) 10V 1.8Ohm @ 210mA, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
STP5N80K5

STP5N80K5

MOSFET N-CH 800V 4A TO220

STMicroelectronics

760 1.96
- +

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STP5N80K5

Datenblatt

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.75Ohm @ 2A, 10V 5V @ 100µA 5 nC @ 10 V ±30V 177 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD18503KCS

CSD18503KCS

MOSFET N-CH 40V 100A TO220-3

Texas Instruments

157 1.96
- +

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CSD18503KCS

Datenblatt

Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 4.5mOhm @ 75A, 10V 2.3V @ 250µA 36 nC @ 10 V ±20V 3150 pF @ 20 V - 188W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF9P25

FQPF9P25

MOSFET P-CH 250V 6A TO220F-3

onsemi

320 1.97
- +

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FQPF9P25

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Tube QFET® Active P-Channel MOSFET (Metal Oxide) 250 V 6A (Tc) 10V 620mOhm @ 3A, 10V 5V @ 250µA 38 nC @ 10 V ±30V 1180 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R600P7XKSA1

IPP60R600P7XKSA1

MOSFET N-CH 650V 6A TO220-3

Infineon Technologies

118 2.01
- +

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Немедленный

IPP60R600P7XKSA1

Datenblatt

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK10A50W,S5X

TK10A50W,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

152 2.01
- +

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Немедленный

TK10A50W,S5X

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 9.7A (Ta) 10V 380mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 30W (Tc) 150°C Through Hole
IRF9610SPBF

IRF9610SPBF

MOSFET P-CH 200V 1.8A D2PAK

Vishay Siliconix

978 2.04
- +

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Немедленный

IRF9610SPBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 1.8A (Tc) 10V 3Ohm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 170 pF @ 25 V - 3W (Ta), 20W (Tc) -55°C ~ 150°C (TJ) Surface Mount
VN4012L-G

VN4012L-G

MOSFET N-CH 400V 160MA TO92-3

Microchip Technology

804 2.08
- +

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Немедленный

VN4012L-G

Datenblatt

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 160mA (Tj) 4.5V 12Ohm @ 100mA, 4.5V 1.8V @ 1mA - ±20V 110 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z24SPBF

IRF9Z24SPBF

MOSFET P-CH 60V 11A D2PAK

Vishay Siliconix

180 2.09
- +

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Немедленный

IRF9Z24SPBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) 10V 280mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDPF12N50NZ

FDPF12N50NZ

MOSFET N-CH 500V 11.5A TO220F

onsemi

185 2.10
- +

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Немедленный

FDPF12N50NZ

Datenblatt

Tube UniFET-II™ Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Tc) 10V 520mOhm @ 5.75A, 10V 5V @ 250µA 30 nC @ 10 V ±25V 1235 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHD7N60E-GE3

SIHD7N60E-GE3

MOSFET N-CH 600V 7A DPAK

Vishay Siliconix

169 2.10
- +

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Немедленный

SIHD7N60E-GE3

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 680 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
VP2450N3-G

VP2450N3-G

MOSFET P-CH 500V 100MA TO92-3

Microchip Technology

328 2.12
- +

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Немедленный

VP2450N3-G

Datenblatt

Bag - Active P-Channel MOSFET (Metal Oxide) 500 V 100mA (Tj) 4.5V, 10V 30Ohm @ 100mA, 10V 3.5V @ 1mA - ±20V 190 pF @ 25 V - 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
SIHP11N80AE-GE3

SIHP11N80AE-GE3

MOSFET N-CH 800V 8A TO220AB

Vishay Siliconix

921 2.12
- +

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Немедленный

SIHP11N80AE-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 450mOhm @ 5.5A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 804 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTP6412ANG

NTP6412ANG

MOSFET N-CH 100V 58A TO220AB

onsemi

2577 2.13
- +

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Немедленный

NTP6412ANG

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) 10V 18.2mOhm @ 58A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3500 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
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