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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDP120N10

FDP120N10

MOSFET N-CH 100V 74A TO220-3

onsemi

102 2.71
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FDP120N10

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Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 74A (Tc) 10V 12mOhm @ 74A, 10V 4.5V @ 250µA 86 nC @ 10 V ±20V 5605 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP12NK30Z

STP12NK30Z

MOSFET N-CH 300V 9A TO220AB

STMicroelectronics

956 2.72
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STP12NK30Z

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Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 300 V 9A (Tc) 10V 400mOhm @ 4.5A, 10V 4.5V @ 50µA 35 nC @ 10 V ±30V 670 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP190N65S3

FCP190N65S3

MOSFET N-CH 650V 17A TO220-3

onsemi

876 2.72
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FCP190N65S3

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Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 4.5V @ 1.7mA 33 nC @ 10 V ±30V 1350 pF @ 400 V - 144W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z30PBF-BE3

IRF9Z30PBF-BE3

MOSFET P-CH 50V 18A TO220AB

Vishay Siliconix

898 2.74
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Tube - Active P-Channel MOSFET (Metal Oxide) 50 V 18A (Tc) 10V 140mOhm @ 9.3A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 900 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF18N60M6

STF18N60M6

MOSFET N-CH 600V 13A TO220FP

STMicroelectronics

2641 2.76
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STF18N60M6

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Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 280mOhm @ 6.5A, 10V 4.75V @ 250µA 16.8 nC @ 10 V ±25V 650 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP6NK60ZFP

STP6NK60ZFP

MOSFET N-CH 600V 6A TO220FP

STMicroelectronics

812 2.77
- +

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STP6NK60ZFP

Datenblatt

Tube SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 905 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP114N12N3GXKSA1

IPP114N12N3GXKSA1

MOSFET N-CH 120V 75A TO220-3

Infineon Technologies

220 2.77
- +

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IPP114N12N3GXKSA1

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Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 75A (Tc) 10V 11.4mOhm @ 75A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 4310 pF @ 60 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP15N80AE-GE3

SIHP15N80AE-GE3

MOSFET N-CH 800V 13A TO220AB

Vishay Siliconix

2616 2.77
- +

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Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 350mOhm @ 7.5A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1093 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP4N65X2

IXTP4N65X2

MOSFET N-CH 650V 4A TO220

IXYS

266 2.80
- +

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IXTP4N65X2

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Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 850mOhm @ 2A, 10V 5V @ 250µA 8.3 nC @ 10 V ±30V 455 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA32N20C

FQA32N20C

MOSFET N-CH 200V 32A TO3PN

onsemi

216 2.80
- +

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FQA32N20C

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 200 V 32A (Tc) 10V 82mOhm @ 16A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2220 pF @ 25 V - 204W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF8N80K5

STF8N80K5

MOSFET N-CH 800V 6A TO220FP

STMicroelectronics

3339 2.81
- +

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STF8N80K5

Datenblatt

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 950mOhm @ 3A, 10V 5V @ 100µA 16.5 nC @ 10 V ±30V 450 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF70N10

FQPF70N10

MOSFET N-CH 100V 35A TO220F

onsemi

1000 2.83
- +

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FQPF70N10

Datenblatt

Tube QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 23mOhm @ 17.5A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 3300 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL540SPBF

IRL540SPBF

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix

594 2.83
- +

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IRL540SPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4V, 5V 77mOhm @ 17A, 5V 2V @ 250µA 64 nC @ 5 V ±10V 2200 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2204PBF

IRF2204PBF

MOSFET N-CH 40V 210A TO220AB

Infineon Technologies

401 2.84
- +

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IRF2204PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 210A (Tc) 10V 3.6mOhm @ 130A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 5890 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIBC20GPBF

IRFIBC20GPBF

MOSFET N-CH 600V 1.7A TO220-3

Vishay Siliconix

2081 2.86
- +

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Немедленный

IRFIBC20GPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 1.7A (Tc) 10V 4.4Ohm @ 1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI9630GPBF

IRFI9630GPBF

MOSFET P-CH 200V 4.3A TO220-3

Vishay Siliconix

148 2.88
- +

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Немедленный

IRFI9630GPBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 4.3A (Tc) 10V 800mOhm @ 2.6A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA17N80AE-GE3

SIHA17N80AE-GE3

MOSFET N-CH 800V 7A TO220

Vishay Siliconix

2875 2.91
- +

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Немедленный

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 1260 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ44RPBF

IRFZ44RPBF

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix

2456 2.92
- +

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Немедленный

IRFZ44RPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF740SPBF

IRF740SPBF

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix

423 2.93
- +

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Немедленный

IRF740SPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDPF10N60ZUT

FDPF10N60ZUT

MOSFET N-CH 600V 9A TO220F

onsemi

1000 2.96
- +

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Немедленный

FDPF10N60ZUT

Datenblatt

Tube UniFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 800mOhm @ 4.5A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1980 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
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