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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK28N65W5,S1F

TK28N65W5,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2719 6.35
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TK28N65W5,S1F

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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 130mOhm @ 13.8A, 10V 4.5V @ 1.6mA 90 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C Through Hole
IXTP34N65X2

IXTP34N65X2

MOSFET N-CH 650V 34A TO220AB

IXYS

3777 6.70
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IXTP34N65X2

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Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 96mOhm @ 17A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 3000 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG30N60E-GE3

SIHG30N60E-GE3

MOSFET N-CH 600V 29A TO247AC

Vishay Siliconix

2691 6.70
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SIHG30N60E-GE3

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK065N65Z,S1F

TK065N65Z,S1F

MOSFET N-CH 650V 38A TO247

Toshiba Semiconductor and Storage

3205 6.81
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TK065N65Z,S1F

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Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Ta) 10V 65mOhm @ 19A, 10V 4V @ 1.69mA 62 nC @ 10 V ±30V 3650 pF @ 300 V - 270W (Tc) 150°C Through Hole
IXFH220N06T3

IXFH220N06T3

MOSFET N-CH 60V 220A TO247

IXYS

3612 6.81
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IXFH220N06T3

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Tube HiperFET™, TrenchT3™ Active N-Channel MOSFET (Metal Oxide) 60 V 220A (Tc) 10V 4mOhm @ 100A, 10V 4V @ 250µA 136 nC @ 10 V ±20V 8500 pF @ 25 V - 440W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP85N10-10-GE3

SUP85N10-10-GE3

MOSFET N-CH 100V 85A TO220AB

Vishay Siliconix

2306 6.94
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SUP85N10-10-GE3

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Tube TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 85A (Tc) 4.5V, 10V 10.5mOhm @ 30A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 6550 pF @ 25 V - 3.75W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH22N50P

IXFH22N50P

MOSFET N-CH 500V 22A TO247AD

IXYS

3552 6.94
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IXFH22N50P

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Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 270mOhm @ 11A, 10V 5.5V @ 2.5mA 50 nC @ 10 V ±30V 2630 pF @ 25 V - 350W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW7N95K3

STW7N95K3

MOSFET N-CH 950V 7.2A TO247-3

STMicroelectronics

3692 6.95
- +

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STW7N95K3

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Tube SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 950 V 7.2A (Tc) 10V 1.35Ohm @ 3.6A, 10V 5V @ 100µA 34 nC @ 10 V ±30V 1031 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT37F50B

APT37F50B

MOSFET N-CH 500V 37A TO247

Microchip Technology

2932 7.08
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APT37F50B

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 37A (Tc) 10V 150mOhm @ 18A, 10V 5V @ 1mA 145 nC @ 10 V ±30V 5710 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH76N25T

IXTH76N25T

MOSFET N-CH 250V 76A TO247

IXYS

3352 7.10
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IXTH76N25T

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Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 76A (Tc) 10V 39mOhm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 4500 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP13N95K3

STP13N95K3

MOSFET N-CH 950V 10A TO220

STMicroelectronics

2342 7.44
- +

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STP13N95K3

Datenblatt

Tube SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 950 V 10A (Tc) 10V 850mOhm @ 5A, 10V 5V @ 100µA 51 nC @ 10 V ±30V 1620 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC090SMA070B

MSC090SMA070B

SICFET N-CH 700V TO247-3

Microchip Technology

2951 8.12
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MSC090SMA070B

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Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V - - - - - - - - - -55°C ~ 175°C (TJ) Through Hole
IXFP56N30X3M

IXFP56N30X3M

MOSFET N-CH 300V 56A TO220

IXYS

2994 8.56
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IXFP56N30X3M

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 56A (Tc) 10V 27mOhm @ 28A, 10V 4.5V @ 1.5mA 56 nC @ 10 V ±20V 3750 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH96N20P

IXTH96N20P

MOSFET N-CH 200V 96A TO247

IXYS

3458 9.73
- +

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IXTH96N20P

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Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 96A (Tc) 10V 24mOhm @ 500mA, 10V 5V @ 250µA 145 nC @ 10 V ±20V 4800 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH150N17T2

IXFH150N17T2

MOSFET N-CH 175V 150A TO247AD

IXYS

3515 10.11
- +

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IXFH150N17T2

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Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 175 V 150A (Tc) 10V 12mOhm @ 75A, 10V 4.5V @ 1mA 233 nC @ 10 V ±20V 14600 pF @ 25 V - 880W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDPF12N50T

FDPF12N50T

MOSFET N-CH 500V 11.5A TO220F

onsemi

1000 2.87
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FDPF12N50T

Datenblatt

Tube UniFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Tc) 10V 650mOhm @ 6A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1315 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC060SMA070B

MSC060SMA070B

SICFET N-CH 700V 39A TO247-3

Microchip Technology

2037 10.30
- +

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MSC060SMA070B

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 39A (Tc) 20V 75mOhm @ 20A, 20V 2.4V @ 1mA 56 nC @ 20 V +23V, -10V 1175 pF @ 700 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK49N65W5,S1F

TK49N65W5,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2442 11.26
- +

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TK49N65W5,S1F

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 49.2A (Ta) 10V 57mOhm @ 24.6A, 10V 4.5V @ 2.5mA 185 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C Through Hole
MSC060SMA070S

MSC060SMA070S

SICFET N-CH 700V 37A D3PAK

Microchip Technology

2341 11.29
- +

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Немедленный

MSC060SMA070S

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 37A (Tc) 20V 75mOhm @ 20A, 20V 2.4V @ 1mA 56 nC @ 20 V +23V, -10V 1175 pF @ 700 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK39J60W5,S1VQ

TK39J60W5,S1VQ

MOSFET N-CH 600V 38.8A TO3P

Toshiba Semiconductor and Storage

2908 11.57
- +

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Немедленный

TK39J60W5,S1VQ

Datenblatt

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 135 nC @ 10 V ±30V 4100 pF @ 300 V Super Junction 270W (Tc) 150°C (TJ) Through Hole
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