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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFB5615PBF

IRFB5615PBF

MOSFET N-CH 150V 35A TO220AB

Infineon Technologies

580 2.42
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IRFB5615PBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 35A (Tc) 10V 39mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPAW60R180P7SXKSA1

IPAW60R180P7SXKSA1

MOSFET N-CHANNEL 650V 18A TO220

Infineon Technologies

553 2.45
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IPAW60R180P7SXKSA1

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Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 26W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD18510KCS

CSD18510KCS

MOSFET N-CH 40V 200A TO220-3

Texas Instruments

400 2.46
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CSD18510KCS

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Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Ta) 4.5V, 10V 1.7mOhm @ 100A, 10V 2.3V @ 250µA 75 nC @ 4.5 V ±20V 11400 pF @ 20 V - 250W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRF540SPBF

IRF540SPBF

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix

360 2.46
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IRF540SPBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP13N50C

FQP13N50C

MOSFET N-CH 500V 13A TO220-3

onsemi

210 2.47
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FQP13N50C

Datenblatt

Tube QFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 480mOhm @ 6.5A, 10V 4V @ 250µA 56 nC @ 10 V ±30V 2055 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP62NS04Z

STP62NS04Z

MOSFET N-CH 33V 62A TO220AB

STMicroelectronics

505 2.47
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STP62NS04Z

Datenblatt

Tube MESH OVERLAY™ Active N-Channel MOSFET (Metal Oxide) 33 V 62A (Tc) 10V 15mOhm @ 30A, 10V 4V @ 250µA 47 nC @ 10 V Clamped 1330 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK8A65D(STA4,Q,M)

TK8A65D(STA4,Q,M)

MOSFET N-CH 650V 8A TO220SIS

Toshiba Semiconductor and Storage

2444 2.51
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TK8A65D(STA4,Q,M)

Datenblatt

Bulk π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Ta) 10V 840mOhm @ 4A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
IRL640PBF-BE3

IRL640PBF-BE3

MOSFET N-CH 200V 17A TO220AB

Vishay Siliconix

317 2.60
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 4V, 5V 180mOhm @ 10A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 1800 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLI3705NPBF

IRLI3705NPBF

MOSFET N-CH 55V 52A TO220AB FP

Infineon Technologies

547 2.61
- +

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IRLI3705NPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 52A (Tc) 4V, 10V 10mOhm @ 28A, 10V 2V @ 250µA 98 nC @ 5 V ±16V 3600 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75639P3

HUF75639P3

MOSFET N-CH 100V 56A TO220-3

onsemi

259 2.71
- +

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HUF75639P3

Datenblatt

Tube UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z30PBF

IRF9Z30PBF

MOSFET P-CH 50V 18A TO220AB

Vishay Siliconix

187 2.74
- +

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IRF9Z30PBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 50 V 18A (Tc) 10V 140mOhm @ 9.3A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 900 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP150N10A-F102

FDP150N10A-F102

MOSFET N-CH 100V 50A TO220-3

onsemi

354 2.76
- +

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FDP150N10A-F102

Datenblatt

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 10V 15mOhm @ 50A, 10V 4V @ 250µA 21 nC @ 10 V ±20V 1440 pF @ 50 V - 91W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK65E10N1,S1X

TK65E10N1,S1X

MOSFET N CH 100V 148A TO220

Toshiba Semiconductor and Storage

134 2.78
- +

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TK65E10N1,S1X

Datenblatt

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 148A (Ta) 10V 4.8mOhm @ 32.5A, 10V 4V @ 1mA 81 nC @ 10 V ±20V 5400 pF @ 50 V - 192W (Tc) 150°C (TJ) Through Hole
IRLIZ34GPBF

IRLIZ34GPBF

MOSFET N-CH 60V 20A TO220-3

Vishay Siliconix

320 2.79
- +

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Немедленный

IRLIZ34GPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4V, 5V 50mOhm @ 12A, 5V 2V @ 250µA 35 nC @ 5 V ±10V 1600 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP9NK50Z

STP9NK50Z

MOSFET N-CH 500V 7.2A TO220AB

STMicroelectronics

2696 2.89
- +

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STP9NK50Z

Datenblatt

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 500 V 7.2A (Tc) 10V 850mOhm @ 3.6A, 10V 4.5V @ 100µA 32 nC @ 10 V ±30V 910 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF740APBF-BE3

IRF740APBF-BE3

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix

3387 2.92
- +

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Немедленный

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF100N10F7

STF100N10F7

MOSFET N CH 100V 45A TO-220FP

STMicroelectronics

9220 2.92
- +

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STF100N10F7

Datenblatt

Tube DeepGATE™, STripFET™ VII Active N-Channel MOSFET (Metal Oxide) 100 V 45A (Tc) 10V 8mOhm @ 22.5A, 10V 4.5V @ 250µA 61 nC @ 10 V ±20V 4369 pF @ 50 V - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP85N06

FQP85N06

MOSFET N-CH 60V 85A TO220-3

onsemi

284 2.94
- +

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Немедленный

FQP85N06

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 85A (Tc) 10V 10mOhm @ 42.5A, 10V 4V @ 250µA 112 nC @ 10 V ±25V 4120 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
STF24N60M2

STF24N60M2

MOSFET N-CH 600V 18A TO220FP

STMicroelectronics

1409 2.95
- +

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Немедленный

STF24N60M2

Datenblatt

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 9A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 1060 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP110N10F7

STP110N10F7

MOSFET N CH 100V 110A TO-220

STMicroelectronics

1521 2.97
- +

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Немедленный

STP110N10F7

Datenblatt

Tube DeepGATE™, STripFET™ VII Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 7mOhm @ 55A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 5500 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
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