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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF620PBF-BE3

IRF620PBF-BE3

MOSFET N-CH 200V 5.2A TO220AB

Vishay Siliconix

178 1.23
- +

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Немедленный

IRF620PBF-BE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) - 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLB8748PBF

IRLB8748PBF

MOSFET N-CH 30V 92A TO220AB

Infineon Technologies

425 1.25
- +

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IRLB8748PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 92A (Tc) 4.5V, 10V 4.8mOhm @ 40A, 10V 2.35V @ 50µA 23 nC @ 4.5 V ±20V 2139 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF200B211

IRF200B211

MOSFET N-CH 200V 12A TO220AB

Infineon Technologies

443 1.25
- +

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IRF200B211

Datenblatt

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 12A (Tc) 10V 170mOhm @ 7.2A, 10V 4.9V @ 50µA 23 nC @ 10 V ±20V 790 pF @ 50 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP13N10L

FQP13N10L

MOSFET N-CH 100V 12.8A TO220-3

onsemi

761 1.33
- +

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FQP13N10L

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 12.8A (Tc) 5V, 10V 180mOhm @ 6.4A, 10V 2V @ 250µA 12 nC @ 5 V ±20V 520 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF720PBF

IRF720PBF

MOSFET N-CH 400V 3.3A TO220AB

Vishay Siliconix

196 1.35
- +

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Немедленный

IRF720PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) 10V 1.8Ohm @ 2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ11-NR4941

BUZ11-NR4941

MOSFET N-CH 50V 30A TO220-3

onsemi

754 1.37
- +

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BUZ11-NR4941

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 50 V 30A (Tc) 10V 40mOhm @ 15A, 10V 4V @ 1mA - ±20V 2000 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP055N03LGXKSA1

IPP055N03LGXKSA1

MOSFET N-CH 30V 50A TO220-3

Infineon Technologies

629 1.41
- +

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Немедленный

IPP055N03LGXKSA1

Datenblatt

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 5.5mOhm @ 30A, 10V 2.2V @ 250µA 31 nC @ 10 V ±20V 3200 pF @ 15 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF2N60C

FQPF2N60C

MOSFET N-CH 600V 2A TO220F

onsemi

169 1.44
- +

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Немедленный

FQPF2N60C

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.7Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±30V 235 pF @ 25 V - 23W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF11P06

FQPF11P06

MOSFET P-CH 60V 8.6A TO220F

onsemi

379 1.49
- +

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FQPF11P06

Datenblatt

Tube QFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 60 V 8.6A (Tc) 10V 175mOhm @ 4.3A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 550 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP6N40C

FQP6N40C

MOSFET N-CH 400V 6A TO220-3

onsemi

428 1.53
- +

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FQP6N40C

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 625 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP7N60M2

STP7N60M2

MOSFET N-CH 600V 5A TO220

STMicroelectronics

562 1.54
- +

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STP7N60M2

Datenblatt

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 950mOhm @ 2.5A, 10V 4V @ 250µA 8.8 nC @ 10 V ±25V 271 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF630PBF

IRF630PBF

MOSFET N-CH 200V 9A TO220AB

Vishay Siliconix

6238 1.60
- +

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Немедленный

IRF630PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9014PBF

IRFU9014PBF

MOSFET P-CH 60V 5.1A TO251AA

Vishay Siliconix

2675 1.60
- +

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Немедленный

IRFU9014PBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD18534KCS

CSD18534KCS

MOSFET N-CH 60V 45A/100A TO220-3

Texas Instruments

1448 1.60
- +

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Немедленный

CSD18534KCS

Datenblatt

Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Ta), 100A (Tc) 4.5V, 10V 9.5mOhm @ 40A, 10V 2.3V @ 250µA 24 nC @ 10 V ±20V 1880 pF @ 30 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4510PBF

IRFB4510PBF

MOSFET N-CH 100V 62A TO220AB

Infineon Technologies

994 1.66
- +

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Немедленный

IRFB4510PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 62A (Tc) 10V 13.5mOhm @ 37A, 10V 4V @ 100µA 87 nC @ 10 V ±20V 3180 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP040N06NAKSA1

IPP040N06NAKSA1

MOSFET N-CH 60V 20A/80A TO220-3

Infineon Technologies

326 2.38
- +

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Немедленный

IPP040N06NAKSA1

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta), 80A (Tc) 6V, 10V 4mOhm @ 80A, 10V 2.8V @ 50µA 38 nC @ 10 V ±20V 2700 pF @ 30 V - 3W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP6NK60Z

STP6NK60Z

MOSFET N-CH 600V 6A TO220AB

STMicroelectronics

990 2.38
- +

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Немедленный

STP6NK60Z

Datenblatt

Tube SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 905 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF730ASPBF

IRF730ASPBF

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix

1000 2.40
- +

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Немедленный

IRF730ASPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP55NF06L

STP55NF06L

MOSFET N-CH 60V 55A TO220AB

STMicroelectronics

130 2.40
- +

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Немедленный

STP55NF06L

Datenblatt

Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 10V, 5V 18mOhm @ 27.5A, 10V 1.7V @ 250µA 37 nC @ 4.5 V ±16V 1700 pF @ 25 V - 95W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP042N03LGXKSA1

IPP042N03LGXKSA1

MOSFET N-CH 30V 70A TO220-3

Infineon Technologies

141 1.70
- +

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Немедленный

IPP042N03LGXKSA1

Datenblatt

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 4.2mOhm @ 30A, 10V 2.2V @ 250µA 38 nC @ 10 V ±20V 3900 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
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