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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IV1Q12160T4

IV1Q12160T4

SIC MOSFET, 1200V 160MOHM, TO-24

Inventchip

111 19.64
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IV1Q12160T4

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Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 20V 195mOhm @ 10A, 20V 2.9V @ 1.9mA 43 nC @ 20 V +20V, -5V 885 pF @ 800 V - 138W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPT65R033G7XTMA1

IPT65R033G7XTMA1

MOSFET N-CH 650V 69A 8HSOF

Infineon Technologies

911 19.66
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IPT65R033G7XTMA1

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Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Obsolete N-Channel MOSFET (Metal Oxide) 650 V 69A (Tc) 10V 33mOhm @ 28.9A, 10V 4V @ 1.44mA 110 nC @ 10 V ±20V 5000 pF @ 400 V - 391W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UJ4SC075018B7S

UJ4SC075018B7S

750V/18MOHM, N-OFF SIC STACK CAS

UnitedSiC

200 20.74
- +

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UJ4SC075018B7S

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Tape & Reel (TR),Cut Tape (CT) - Active P-Channel SiCFET (Silicon Carbide) 750 V 72A (Tc) 12V 23mOhm @ 50A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1414 pF @ 400 V - 259W (Tc) -55°C ~ 175°C (TJ) Surface Mount
GPIHV30DFN

GPIHV30DFN

GANFET N-CH 1200V 30A DFN8X8

GaNPower

112 22.00
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GPIHV30DFN

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Tape & Reel (TR) - Active N-Channel GaNFET (Gallium Nitride) 1200 V 30A 6V - 1.4V @ 3.5mA 8.25 nC @ 6 V +7.5V, -12V 236 pF @ 400 V - - -55°C ~ 150°C (TJ) Surface Mount
GPI65060DFN

GPI65060DFN

GANFET N-CH 650V 60A DFN8X8

GaNPower

120 30.00
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GPI65060DFN

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Tape & Reel (TR) - Active N-Channel GaNFET (Gallium Nitride) 650 V 60A 6V - 1.2V @ 3.5mA 16 nC @ 6 V +7.5V, -12V 420 pF @ 400 V - - -55°C ~ 150°C (TJ) Surface Mount
UJ4SC075011B7S

UJ4SC075011B7S

750V/11MOHM, N-OFF SIC STACK CAS

UnitedSiC

197 32.01
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UJ4SC075011B7S

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Tape & Reel (TR),Cut Tape (CT) - Active P-Channel SiCFET (Silicon Carbide) 750 V 104A (Tc) 12V 14.2mOhm @ 60A, 12V 5.5V @ 10mA 75 nC @ 15 V ±20V 3245 pF @ 400 V - 357W (Tc) -55°C ~ 175°C (TJ) Surface Mount
LH7A400N0G000B5

LH7A400N0G000B5

LH7A400 - 32-BIT SYSTEM-ON-CHIP

Rochester Electronics, LLC

9310 37.26
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LH7A400N0G000B5

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
AFT18HW355SR5

AFT18HW355SR5

RF N-CHANNEL POWER MOSFET

NXP USA Inc.

3161 254.10
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AFT18HW355SR5

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
SCT3040KRC14

SCT3040KRC14

SICFET N-CH 1200V 55A TO247-4L

Rohm Semiconductor

212 56.59
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SCT3040KRC14

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 18V 52mOhm @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 1337 pF @ 800 V - 262W 175°C (TJ) Through Hole
SCT3040KLHRC11

SCT3040KLHRC11

SICFET N-CH 1200V 55A TO247N

Rohm Semiconductor

206 59.02
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SCT3040KLHRC11

Datenblatt

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Ta) 18V 52mOhm @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 1337 pF @ 800 V - 262W 175°C (TJ) Through Hole
SCT3030KLGC11

SCT3030KLGC11

SICFET N-CH 1200V 72A TO247N

Rohm Semiconductor

161 84.94
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SCT3030KLGC11

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Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 72A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 131 nC @ 18 V +22V, -4V 2222 pF @ 800 V - 339W (Tc) 175°C (TJ) Through Hole
IRLML2402TRPBF

IRLML2402TRPBF

MOSFET N-CH 20V 1.2A SOT23

Infineon Technologies

1781 0.43
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IRLML2402TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 2.7V, 4.5V 250mOhm @ 930mA, 4.5V 700mV @ 250µA (Min) 3.9 nC @ 4.5 V ±12V 110 pF @ 15 V - 540mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK98150-55A/CUF

BUK98150-55A/CUF

MOSFET N-CH 55V 5.5A SOT223

Nexperia USA Inc.

250 0.57
- +

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BUK98150-55A/CUF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 5.5A (Tc) 4.5V, 10V 137mOhm @ 5A, 10V 2V @ 1mA 5.3 nC @ 5 V ±15V 320 pF @ 25 V - 8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTF6P02T3G

NTF6P02T3G

MOSFET P-CH 20V 10A SOT223

onsemi

15134 1.24
- +

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NTF6P02T3G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 2.5V, 4.5V 50mOhm @ 6A, 4.5V 1V @ 250µA 20 nC @ 4.5 V ±8V 1200 pF @ 16 V - 8.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDB14N30TM

FDB14N30TM

MOSFET N-CH 300V 14A D2PAK

onsemi

10310 1.64
- +

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FDB14N30TM

Datenblatt

Tape & Reel (TR),Cut Tape (CT) UniFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 300 V 14A (Tc) 10V 290mOhm @ 7A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 1060 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL540NPBF

IRL540NPBF

MOSFET N-CH 100V 36A TO220AB

Infineon Technologies

13421 1.63
- +

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IRL540NPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 4V, 10V 44mOhm @ 18A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFD9120PBF

IRFD9120PBF

MOSFET P-CH 100V 1A 4DIP

Vishay Siliconix

547 1.92
- +

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IRFD9120PBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) 10V 600mOhm @ 600mA, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRF5210STRLPBF

IRF5210STRLPBF

MOSFET P-CH 100V 38A D2PAK

Infineon Technologies

3633 3.35
- +

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IRF5210STRLPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 60mOhm @ 38A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 2780 pF @ 25 V - 3.1W (Ta), 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP27P06

FQP27P06

MOSFET P-CH 60V 27A TO220-3

onsemi

3170 2.18
- +

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FQP27P06

Datenblatt

Tube QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 27A (Tc) 10V 70mOhm @ 13.5A, 10V 4V @ 250µA 43 nC @ 10 V ±25V 1400 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN2R8-40PS,127

PSMN2R8-40PS,127

MOSFET N-CH 40V 100A TO220AB

Nexperia USA Inc.

2711 2.90
- +

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PSMN2R8-40PS,127

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.8mOhm @ 10A, 10V 4V @ 1mA 71 nC @ 10 V ±20V 4491 pF @ 20 V - 211W (Tc) -55°C ~ 175°C (TJ) Through Hole
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