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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STP19NF20

STP19NF20

MOSFET N-CH 200V 15A TO220AB

STMicroelectronics

1476 1.71
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STP19NF20

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Tube MESH OVERLAY™ Active N-Channel MOSFET (Metal Oxide) 200 V 15A (Tc) 10V 160mOhm @ 7.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 800 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP50N06

FQP50N06

MOSFET N-CH 60V 50A TO220-3

onsemi

4449 1.73
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FQP50N06

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Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 22mOhm @ 25A, 10V 4V @ 250µA 41 nC @ 10 V ±25V 1540 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9610PBF

IRF9610PBF

MOSFET P-CH 200V 1.8A TO220AB

Vishay Siliconix

3950 1.75
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IRF9610PBF

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Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 1.8A (Tc) 10V 3Ohm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 170 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLB8743PBF

IRLB8743PBF

MOSFET N-CH 30V 78A TO220AB

Infineon Technologies

643 1.76
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IRLB8743PBF

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 78A (Tc) 4.5V, 10V 3.2mOhm @ 40A, 10V 2.35V @ 100µA 54 nC @ 4.5 V ±20V 5110 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
DN2535N5-G

DN2535N5-G

MOSFET N-CH 350V 500MA TO220-3

Microchip Technology

426 1.76
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DN2535N5-G

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Tube - Active N-Channel MOSFET (Metal Oxide) 350 V 500mA (Tj) 0V 25Ohm @ 120mA, 0V - - ±20V 300 pF @ 25 V Depletion Mode 15W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD18511KCS

CSD18511KCS

MOSFET N-CH 40V 194A TO220-3

Texas Instruments

404 1.77
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CSD18511KCS

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Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 194A (Ta) 4.5V, 10V 2.6mOhm @ 100A, 10V 2.4V @ 250µA 64 nC @ 10 V ±20V 5940 pF @ 20 V - 188W (Ta) -55°C ~ 175°C (TJ) Through Hole
PSMN8R0-40PS,127

PSMN8R0-40PS,127

MOSFET N-CH 40V 77A TO220AB

Nexperia USA Inc.

175 1.77
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PSMN8R0-40PS,127

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 77A (Tc) 10V 7.6mOhm @ 25A, 10V 4V @ 1mA 21 nC @ 10 V ±20V 1262 pF @ 12 V - 86W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ24PBF

IRLZ24PBF

MOSFET N-CH 60V 17A TO220AB

Vishay Siliconix

751 1.78
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IRLZ24PBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4V, 5V 100mOhm @ 10A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA70R360P7SXKSA1

IPA70R360P7SXKSA1

MOSFET N-CH 700V 12.5A TO220

Infineon Technologies

181 1.80
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IPA70R360P7SXKSA1

Datenblatt

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 12.5A (Tc) 10V 360mOhm @ 3A, 10V 3.5V @ 150µA 16.4 nC @ 10 V ±16V 517 pF @ 400 V - 26.4W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRFBC30PBF

IRFBC30PBF

MOSFET N-CH 600V 3.6A TO220AB

Vishay Siliconix

192 1.81
- +

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IRFBC30PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLD120PBF

IRLD120PBF

MOSFET N-CH 100V 1.3A 4DIP

Vishay Siliconix

3906 1.83
- +

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IRLD120PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 1.3A (Ta) 4V, 5V 270mOhm @ 780mA, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
FQP50N06L

FQP50N06L

MOSFET N-CH 60V 52.4A TO220-3

onsemi

515 1.86
- +

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FQP50N06L

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 52.4A (Tc) 5V, 10V 21mOhm @ 26.2A, 10V 2.5V @ 250µA 32 nC @ 5 V ±20V 1630 pF @ 25 V - 121W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP060N06NAKSA1

IPP060N06NAKSA1

MOSFET N-CH 60V 17A/45A TO220-3

Infineon Technologies

198 1.88
- +

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IPP060N06NAKSA1

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 45A (Tc) 6V, 10V 6mOhm @ 45A, 10V 2.8V @ 36µA 27 nC @ 10 V ±20V 2000 pF @ 30 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9530PBF-BE3

IRF9530PBF-BE3

MOSFET P-CH 100V 12A TO220AB

Vishay Siliconix

513 1.89
- +

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IRF9530PBF-BE3

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) - 300mOhm @ 7.2A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 860 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
CSD19503KCS

CSD19503KCS

MOSFET N-CH 80V 100A TO220-3

Texas Instruments

190 1.92
- +

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CSD19503KCS

Datenblatt

Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Ta) 6V, 10V 9.2mOhm @ 60A, 10V 3.4V @ 250µA 36 nC @ 10 V ±20V 2730 pF @ 40 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z34PBF

IRF9Z34PBF

MOSFET P-CH 60V 18A TO220AB

Vishay Siliconix

2489 1.92
- +

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Немедленный

IRF9Z34PBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 10V 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
VP3203N3-G

VP3203N3-G

MOSFET P-CH 30V 650MA TO92-3

Microchip Technology

101 1.93
- +

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VP3203N3-G

Datenblatt

Bag - Active P-Channel MOSFET (Metal Oxide) 30 V 650mA (Tj) 4.5V, 10V 600mOhm @ 3A, 10V 3.5V @ 10mA - ±20V 300 pF @ 25 V - 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
TSM340N06CH X0G

TSM340N06CH X0G

MOSFET N-CHANNEL 60V 30A TO251

Taiwan Semiconductor Corporation

965 1.94
- +

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Немедленный

TSM340N06CH X0G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 34mOhm @ 15A, 10V 2.5V @ 250µA 16.6 nC @ 10 V ±20V 1180 pF @ 30 V - 66W (Tc) 150°C (TJ) Through Hole
IRL3705ZPBF

IRL3705ZPBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies

719 2.03
- +

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Немедленный

IRL3705ZPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V ±16V 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ34PBF-BE3

IRLZ34PBF-BE3

MOSFET N-CH 60V 30A TO220AB

Vishay Siliconix

290 2.03
- +

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Немедленный

IRLZ34PBF-BE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) - 50mOhm @ 18A, 5V 2V @ 250µA 35 nC @ 5 V ±10V 1600 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
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