Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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FDPF10N60NZMOSFET N-CH 600V 10A TO220F |
626 | 3.09 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | UniFET-II™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±25V | 1475 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFP054NPBFMOSFET N-CH 55V 81A TO247AC |
367 | 3.12 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 81A (Tc) | 10V | 12mOhm @ 43A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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FCPF190N60EMOSFET N-CH 600V 20.6A TO220F |
483 | 3.13 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.6A (Tc) | 10V | 190mOhm @ 10A, 10V | 3.5V @ 250µA | 82 nC @ 10 V | ±20V | 3175 pF @ 25 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FQPF13N50CFMOSFET N-CH 500V 13A TO220F |
2224 | 3.13 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | FRFET® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 10V | 540mOhm @ 6.5A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±30V | 2055 pF @ 25 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FDP050AN06A0MOSFET N-CH 60V 18A/80A TO220-3 |
666 | 3.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 18A (Ta), 80A (Tc) | 6V, 10V | 5mOhm @ 80A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 3900 pF @ 25 V | - | 245W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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ZXMN6A11GTAMOSFET N-CH 60V 3.1A SOT223 |
306 | 0.78 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 3.1A (Ta) | 4.5V, 10V | 120mOhm @ 2.5A, 10V | 3V @ 250µA | 5.7 nC @ 10 V | ±20V | 330 pF @ 40 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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STP40NF10LMOSFET N-CH 100V 40A TO220AB |
540 | 3.18 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | STripFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 5V, 10V | 33mOhm @ 20A, 10V | 2.5V @ 250µA | 64 nC @ 5 V | ±17V | 2300 pF @ 25 V | - | 150W (Tc) | 175°C (TJ) | Through Hole |
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STP11NK50ZFPMOSFET N-CH 500V 10A TO220FP |
1001 | 3.18 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | SuperMESH™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 520mOhm @ 4.5A, 10V | 4.5V @ 100µA | 68 nC @ 10 V | ±30V | 1390 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STP80NF55MOSFET N-CH 55V 80A TO220 |
251 | 3.18 |
ДобавитьНемедленный |
Tube | * | Last Time Buy | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | |
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FCPF400N80ZMOSFET N-CH 800V 11A TO220F |
185 | 3.22 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 400mOhm @ 5.5A, 10V | 4.5V @ 1.1mA | 56 nC @ 10 V | ±20V | 2350 pF @ 100 V | - | 35.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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PSMN1R8-30PL,127MOSFET N-CH 30V 100A TO220AB |
198 | 3.30 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 1.8mOhm @ 25A, 10V | 2.15V @ 1mA | 170 nC @ 10 V | ±20V | 10180 pF @ 12 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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STP10NK60ZFPMOSFET N-CH 600V 10A TO220FP |
1034 | 3.71 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 750mOhm @ 4.5A, 10V | 4.5V @ 250µA | 70 nC @ 10 V | ±30V | 1370 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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PSMN3R0-60PS,127MOSFET N-CH 60V 100A TO220AB |
743 | 3.89 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 3mOhm @ 25A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±20V | 8079 pF @ 30 V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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STP31N65M5MOSFET N-CH 650V 22A TO220 |
265 | 4.44 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 148mOhm @ 11A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±25V | 816 pF @ 100 V | - | 150W (Tc) | 150°C (TJ) | Through Hole |
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STF13NM60NDMOSFET N-CH 600V 11A TO220FP |
118 | 4.55 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | FDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 24.5 nC @ 10 V | ±25V | 845 pF @ 50 V | - | 25W (Tc) | 150°C (TJ) | Through Hole |
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STP10NK80ZMOSFET N-CH 800V 9A TO220AB |
1173 | 4.61 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 9A (Tc) | 10V | 900mOhm @ 4.5A, 10V | 4.5V @ 100µA | 72 nC @ 10 V | ±30V | 2180 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FDA28N50MOSFET N-CH 500V 28A TO3PN |
2579 | 4.80 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 28A (Tc) | 10V | 155mOhm @ 14A, 10V | 5V @ 250µA | 105 nC @ 10 V | ±30V | 5140 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STW20NK50ZMOSFET N-CH 500V 17A TO247-3 |
3185 | 4.91 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 17A (Tc) | 10V | 270mOhm @ 8.5A, 10V | 4.5V @ 100µA | 119 nC @ 10 V | ±30V | 2600 pF @ 25 V | - | 190W (Tc) | 150°C (TJ) | Through Hole |
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IPP048N12N3GXKSA1MOSFET N-CH 120V 100A TO220-3 |
3320 | 5.48 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 100A (Tc) | 10V | 4.8mOhm @ 100A, 10V | 4V @ 230µA | 182 nC @ 10 V | ±20V | 12000 pF @ 60 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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STP45N40DM2AGMOSFET N-CH 400V 38A TO220 |
3069 | 6.97 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Automotive, AEC-Q101, MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 38A (Tc) | 10V | 72mOhm @ 19A, 10V | 5V @ 250µA | 56 nC @ 10 V | ±25V | 2600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |