Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF2804LPBF

IRF2804LPBF

IRF2804 - 12V-300V N-CHANNEL POW

International Rectifier

3747 1.00
- +

Добавить

Немедленный

IRF2804LPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) - 2.3mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V - 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9Y153-100E,115

BUK9Y153-100E,115

TRANSISTOR >30MHZ

NXP USA Inc.

2421 1.00
- +

Добавить

Немедленный

BUK9Y153-100E,115

Datenblatt

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Tc) 5V 146mOhm @ 2A, 10V 2.1V @ 1mA 6.8 nC @ 5 V ±10V 716 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SJ657

2SJ657

P-CHANNL SILICON MOSFET FOR GENE

Sanyo

2865 1.00
- +

Добавить

Немедленный

2SJ657

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRF443

IRF443

MOSFET N-CH 450V 4A TO204AE

International Rectifier

3060 1.00
- +

Добавить

Немедленный

IRF443

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 4A - - - - - - - 75W - Through Hole
IRFS4310PBF

IRFS4310PBF

MOSFET N-CH 100V 130A D2PAK

International Rectifier

2705 1.00
- +

Добавить

Немедленный

IRFS4310PBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4610TRLPBF

IRFS4610TRLPBF

IRFS4610 - 12V-300V N-CHANNEL PO

International Rectifier

2343 1.00
- +

Добавить

Немедленный

IRFS4610TRLPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW60R060C7

IPW60R060C7

IPW60R060 - 600V COOLMOS N-CHANN

Infineon Technologies

3604 1.00
- +

Добавить

Немедленный

IPW60R060C7

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRFS7540TRLPBF

IRFS7540TRLPBF

MOSFET N-CH 60V 110A D2PAK

International Rectifier

2988 0.00
- +

Добавить

Немедленный

IRFS7540TRLPBF

Datenblatt

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 6V, 10V 5.1mOhm @ 65A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4555 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFAE42

IRFAE42

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier

2131 1.00
- +

Добавить

Немедленный

IRFAE42

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDMA8051L

FDMA8051L

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

3688 1.00
- +

Добавить

Немедленный

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 10A (Tc) 4.5V, 10V 14mOhm @ 10A, 10V 3V @ 250µA 20 nC @ 10 V ±20V 1260 pF @ 20 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD5670

FDD5670

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

2050 1.00
- +

Добавить

Немедленный

FDD5670

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 52A (Ta) 6V, 10V 15mOhm @ 10A, 10V 4V @ 250µA 73 nC @ 10 V ±20V 2739 pF @ 15 V - 3.8W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP61N20

FDP61N20

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor

3185 1.00
- +

Добавить

Немедленный

FDP61N20

Datenblatt

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 61A (Tc) 10V 41mOhm @ 30.5A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 3380 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD25N06S2-40ATMA1

IPD25N06S2-40ATMA1

IPD25N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies

3775 1.00
- +

Добавить

Немедленный

IPD25N06S2-40ATMA1

Datenblatt

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 13A, 10V 4V @ 26µA 18 nC @ 10 V ±20V 513 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS4310TRL

AUIRFS4310TRL

MOSFET N-CH 100V 75A D2PAK

International Rectifier

3318 1.00
- +

Добавить

Немедленный

AUIRFS4310TRL

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS4310

AUIRFS4310

MOSFET N-CH 100V 75A D2PAK

International Rectifier

3267 1.00
- +

Добавить

Немедленный

AUIRFS4310

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R125P6

IPA60R125P6

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies

2380 1.00
- +

Добавить

Немедленный

IPA60R125P6

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
BUK9Y14-40B,115

BUK9Y14-40B,115

TRANSISTOR >30MHZ

NXP USA Inc.

2099 1.00
- +

Добавить

Немедленный

BUK9Y14-40B,115

Datenblatt

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 56A (Tc) 5V 11mOhm @ 20A, 10V 2V @ 1mA 21 nC @ 5 V ±15V 1800 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPN50R3K0CE

IPN50R3K0CE

SMALL SIGNAL FIELD-EFFECT TRANSI

Infineon Technologies

3357 1.00
- +

Добавить

Немедленный

IPN50R3K0CE

Datenblatt

Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 2.6A (Tc) 13V 3Ohm @ 400mA, 13V 3.5V @ 30µA 4.3 nC @ 10 V ±20V 84 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FDFM2N111

FDFM2N111

MOSFET N-CH 20V 4A MICROFET

Fairchild Semiconductor

2487 1.00
- +

Добавить

Немедленный

FDFM2N111

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 2.5V, 4.5V 100mOhm @ 4A, 4.5V 1.5V @ 250µA 3.8 nC @ 4.5 V ±12V 273 pF @ 10 V Schottky Diode (Isolated) 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQP15P12

FQP15P12

MOSFET P-CH 120V 15A TO220-3

Fairchild Semiconductor

2362 1.00
- +

Добавить

Немедленный

FQP15P12

Datenblatt

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 120 V 15A (Tc) 10V 200mOhm @ 7.5A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1100 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 42446 Records«Prev1... 12661267126812691270127112721273...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи