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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PMPB15XP,115

PMPB15XP,115

NOW NEXPERIA PMPB15XP - 8.2A, 12

NXP USA Inc.

2666 1.00
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PMPB15XP,115

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Bulk - Active P-Channel MOSFET (Metal Oxide) 12 V 8.2A (Ta) 1.8V, 4.5V 19mOhm @ 8.2A, 4.5V 900mV @ 250µA 100 nC @ 4.5 V ±12V 2875 pF @ 6 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF6215

AUIRF6215

MOSFET P-CH 150V 13A TO220AB

International Rectifier

2025 1.00
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AUIRF6215

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Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMS7560S

FDMS7560S

MOSFET N-CH 25V 30A/49A 8PQFN

Fairchild Semiconductor

2128 1.00
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FDMS7560S

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Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 30A (Ta), 49A (Tc) 4.5V, 10V 1.45mOhm @ 30A, 10V 3V @ 1mA 93 nC @ 10 V ±20V 5945 pF @ 13 V - 2.5W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR120NTRRPBF

IRFR120NTRRPBF

MOSFET N-CH 100V 9.4A DPAK

International Rectifier

2566 1.00
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IRFR120NTRRPBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Tc) 10V 210mOhm @ 5.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 48W (Tc) - Surface Mount
IRFR1010ZTRLPBF

IRFR1010ZTRLPBF

MOSFET N-CH 55V 42A DPAK

International Rectifier

2446 1.00
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IRFR1010ZTRLPBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3006TRLPBF

IRFS3006TRLPBF

IRFS3006 - HEXFET N-CHANNEL POWE

International Rectifier

2531 1.00
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IRFS3006TRLPBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL3207ZPBF

IRFSL3207ZPBF

IRFSL3207 - 12V-300V N-CHANNEL P

International Rectifier

3317 1.00
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IRFSL3207ZPBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 4.1mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6920 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQB27P06TM

FQB27P06TM

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

2993 1.00
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FQB27P06TM

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Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 27A (Tc) 10V 70mOhm @ 13.5A, 10V 4V @ 250µA 43 nC @ 10 V ±25V 1400 pF @ 25 V - 3.75W (Ta), 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDS6676AS

FDS6676AS

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

3013 1.00
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FDS6676AS

Datenblatt

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 14.5A (Ta) 4.5V, 10V 6mOhm @ 14.5A, 10V 3V @ 1mA 63 nC @ 10 V ±20V 2510 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP80N06S2-H5

IPP80N06S2-H5

IPP80N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies

2086 1.00
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IPP80N06S2-H5

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Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.5mOhm @ 80A, 10V 4V @ 230µA 155 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQD5N20LTM

FQD5N20LTM

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor

3389 1.00
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FQD5N20LTM

Datenblatt

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 3.8A (Tc) 5V, 10V 1.2Ohm @ 1.9A, 10V 2V @ 250µA 6.2 nC @ 5 V ±20V 325 pF @ 25 V - 2.5W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR4104TRLPBF

IRFR4104TRLPBF

MOSFET N-CH 40V 42A DPAK

International Rectifier

2691 1.00
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IRFR4104TRLPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQA70N15

FQA70N15

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor

3285 1.00
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FQA70N15

Datenblatt

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 150 V 70A (Tc) 10V 28mOhm @ 35A, 10V 4V @ 250µA 175 nC @ 10 V ±25V 5400 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDS6679AZ

FDS6679AZ

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

2353 1.00
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FDS6679AZ

Datenblatt

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 9.3mOhm @ 13A, 10V 3V @ 250µA 96 nC @ 10 V ±25V 3845 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFSL7787PBF

IRFSL7787PBF

IRFSL7787 - 12V-300V N-CHANNEL P

Infineon Technologies

3909 1.00
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IRFSL7787PBF

Datenblatt

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 76A (Tc) - 8.4mOhm @ 46A, 10V 3.7V @ 100µA 109 nC @ 10 V ±20V 4020 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA65R600E6

IPA65R600E6

IPA65R600 - 650V AND 700V COOLMO

Infineon Technologies

2486 1.00
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IPA65R600E6

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDMS8670S

FDMS8670S

MOSFET N-CH 30V 20A/42A 8PQFN

Fairchild Semiconductor

2702 1.00
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Немедленный

FDMS8670S

Datenblatt

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 42A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 3V @ 1mA 73 nC @ 10 V ±20V 4000 pF @ 15 V - 2.5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N7002BK,215

2N7002BK,215

SMALL SIGNAL FIELD-EFFECT TRANSI

NXP USA Inc.

2052 1.00
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Немедленный

2N7002BK,215

Datenblatt

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 350mA (Ta) 10V 1.6Ohm @ 500mA, 10V 2.1V @ 250µA 0.6 nC @ 4.5 V ±20V 50 pF @ 10 V - 370mW (Ta) 150°C (TJ) Surface Mount
FDB2532-F085

FDB2532-F085

MOSFET N-CH 150V 79A TO263AB

Fairchild Semiconductor

2155 0.00
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Немедленный

FDB2532-F085

Datenblatt

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 79A (Tc) 6V, 10V 16mOhm @ 33A, 10V 4V @ 250µA 107 nC @ 10 V ±20V 5870 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH8337TRPBF

IRFH8337TRPBF

MOSFET N-CH 30V 12A/35A PQFN

International Rectifier

2617 1.00
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Немедленный

IRFH8337TRPBF

Datenblatt

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 35A (Tc) 4.5V, 10V 12.8mOhm @ 16.2A, 10V 2.35V @ 25µA 10 nC @ 10 V ±20V 790 pF @ 10 V - 3.2W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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