Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFM120ATF

IRFM120ATF

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

3973 1.00
- +

Добавить

Немедленный

IRFM120ATF

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 2.3A (Ta) 10V 200mOhm @ 1.15A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 480 pF @ 25 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD12CN10NG

IPD12CN10NG

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies

2877 1.00
- +

Добавить

Немедленный

IPD12CN10NG

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRFR3505PBF

IRFR3505PBF

MOSFET N-CH 55V 30A DPAK

International Rectifier

2467 1.00
- +

Добавить

Немедленный

IRFR3505PBF

Datenblatt

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 13mOhm @ 30A, 10V 4V @ 250µA 93 nC @ 10 V ±20V 2030 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4227TRLPBF

IRFS4227TRLPBF

IRFS4227 - 12V-300V N-CHANNEL PO

International Rectifier

3702 1.00
- +

Добавить

Немедленный

IRFS4227TRLPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 62A (Tc) 10V 26mOhm @ 46A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 4600 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Surface Mount
IPI70R950CE

IPI70R950CE

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies

3108 1.00
- +

Добавить

Немедленный

IPI70R950CE

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IPA057N06N3G

IPA057N06N3G

IPA057N06 - 12V-300V N-CHANNEL P

Infineon Technologies

2436 1.00
- +

Добавить

Немедленный

IPA057N06N3G

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDMS7578

FDMS7578

MOSFET N-CH 25V 17A/28A 8PQFN

Fairchild Semiconductor

2855 1.00
- +

Добавить

Немедленный

FDMS7578

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 17A (Ta), 28A (Tc) 4.5V, 10V 5.8mOhm @ 17A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 1625 pF @ 13 V - 2.5W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDH50N50_F133

FDH50N50_F133

MOSFET N-CH 500V 48A TO247

Fairchild Semiconductor

2969 0.00
- +

Добавить

Немедленный

FDH50N50_F133

Datenblatt

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 48A (Tc) - 105mOhm @ 24A, 10V 5V @ 250µA 137 nC @ 10 V ±20V 6460 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF770N15A

FDPF770N15A

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

2278 1.00
- +

Добавить

Немедленный

FDPF770N15A

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 10A (Tc) 10V 77mOhm @ 10A, 10V 4V @ 250µA 11.2 nC @ 10 V ±20V 765 pF @ 75 V - 21W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFZ48ZS

AUIRFZ48ZS

MOSFET N-CH 55V 61A D2PAK

International Rectifier

2482 1.00
- +

Добавить

Немедленный

AUIRFZ48ZS

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 61A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR6215TRPBF

IRFR6215TRPBF

IRFR6215 - 20V-250V P-CHANNEL PO

International Rectifier

3578 1.00
- +

Добавить

Немедленный

IRFR6215TRPBF

Datenblatt

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y113-100EX

BUK7Y113-100EX

MOSFET N-CH 100V 12A LFPAK56

NXP USA Inc.

2443 1.00
- +

Добавить

Немедленный

BUK7Y113-100EX

Datenblatt

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 113mOhm @ 5A, 10V 4V @ 1mA 10.4 nC @ 10 V ±20V 601 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4615TRLPBF

IRFS4615TRLPBF

IRFS4615 - 12V-300V N-CHANNEL PO

International Rectifier

3481 1.00
- +

Добавить

Немедленный

IRFS4615TRLPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD80R4K5P7

IPD80R4K5P7

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies

2078 1.00
- +

Добавить

Немедленный

IPD80R4K5P7

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IPG20N04S4-08

IPG20N04S4-08

IPG20N04 - 20V-40V N-CHANNEL AUT

Infineon Technologies

3947 1.00
- +

Добавить

Немедленный

IPG20N04S4-08

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDMC2512SDC

FDMC2512SDC

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor

3500 1.00
- +

Добавить

Немедленный

FDMC2512SDC

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 40A (Tc) 4.5V, 10V 2mOhm @ 27A, 10V 2.5V @ 1mA 68 nC @ 10 V ±20V 4410 pF @ 13 V - 3W (Ta), 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU7540PBF

IRFU7540PBF

MOSFET N-CH 60V 90A IPAK

International Rectifier

3661 1.00
- +

Добавить

Немедленный

IRFU7540PBF

Datenblatt

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 6V, 10V 4.8mOhm @ 66A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4360 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK962R8-60E,118

BUK962R8-60E,118

NOW NEXPERIA BUK962R8-60E - 120A

NXP USA Inc.

3804 1.00
- +

Добавить

Немедленный

BUK962R8-60E,118

Datenblatt

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 5V 2.5mOhm @ 25A, 10V 2.1V @ 1mA 92 nC @ 5 V ±10V 15600 pF @ 25 V - 324W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS0300S

FDMS0300S

MOSFET N-CH 30V 31A/49A 8PQFN

Fairchild Semiconductor

2037 1.00
- +

Добавить

Немедленный

FDMS0300S

Datenblatt

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 31A (Ta), 49A (Tc) 4.5V, 10V 1.8mOhm @ 30A, 10V 3V @ 1mA 133 nC @ 10 V ±20V 8705 pF @ 15 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDY100PZ

FDY100PZ

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

2771 1.00
- +

Добавить

Немедленный

FDY100PZ

Datenblatt

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 350mA (Ta) 1.8V, 4.5V 1.2Ohm @ 350mA, 4.5V 1.5V @ 250µA 1.4 nC @ 4.5 V ±8V 100 pF @ 10 V - 625mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
Total 42446 Records«Prev1... 12651266126712681269127012711272...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи