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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
ECH8304-TL-E

ECH8304-TL-E

MOSFET P-CH 12V 9.5A 8ECH

Sanyo

2527 1.00
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Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 12 V 9.5A (Ta) - 16mOhm @ 4.5A, 4.5V - 33 nC @ 4.5 V - 3180 pF @ 6 V - 1.6W (Ta) 150°C (TJ) Surface Mount
IRF3007SPBF

IRF3007SPBF

MOSFET N-CH 75V 62A D2PAK

International Rectifier

2265 1.00
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IRF3007SPBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 62A (Tc) 10V 12.6mOhm @ 48A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3270 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP3652

FDP3652

POWER FIELD-EFFECT TRANSISTOR, 9

Fairchild Semiconductor

3741 1.00
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FDP3652

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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 61A (Tc) 6V, 10V 16mOhm @ 61A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 2880 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3710LPBF

IRF3710LPBF

MOSFET N-CH 100V 57A TO262

International Rectifier

3913 1.00
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IRF3710LPBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 23mOhm @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3130 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMS7676

FDMS7676

MOSFET N-CH 30V 16A/28A 8PQFN

Fairchild Semiconductor

2340 1.00
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FDMS7676

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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 28A (Tc) 4.5V, 10V 5.5mOhm @ 19A, 10V 3V @ 250µA 44 nC @ 10 V ±20V 2960 pF @ 15 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN2R6-60PSQ127

PSMN2R6-60PSQ127

MOSFET N-CH 60V 150A TO220AB

NXP USA Inc.

3960 1.00
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PSMN2R6-60PSQ127

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Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 150A (Ta) - 2.6mOhm @ 25A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 7629 pF @ 25 V - 326W (Ta) -55°C ~ 175°C (TJ) Through Hole
FDN306P

FDN306P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

2783 1.00
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FDN306P

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Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 12 V 2.6A (Ta) 1.8V, 4.5V 40mOhm @ 2.6A, 4.5V 1.5V @ 250µA 17 nC @ 4.5 V ±8V 1138 pF @ 6 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDC5661N

FDC5661N

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor

2034 1.00
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FDC5661N

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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 4.3A (Ta) 4.5V, 10V 47mOhm @ 4.3A, 10V 3V @ 250µA 19 nC @ 10 V ±20V 763 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS86569-F085

FDMS86569-F085

MOSFET N-CH 60V 65A POWER56

Fairchild Semiconductor

3823 1.00
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FDMS86569-F085

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Bulk Automotive, AEC-Q101, PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 65A (Tc) 10V 5.6mOhm @ 65A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 2560 pF @ 30 V - 100W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FDN339AN

FDN339AN

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

3011 1.00
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FDN339AN

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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 35mOhm @ 3A, 4.5V 1.5V @ 250µA 10 nC @ 4.5 V ±8V 700 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRF1405ZS

AUIRF1405ZS

AUIRF1405 - 55V-60V N-CHANNEL AU

International Rectifier

3584 1.00
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AUIRF1405ZS

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 150A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDB0260N1007L

FDB0260N1007L

MOSFET N-CH 100V 200A TO263-7

Fairchild Semiconductor

2890 1.00
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FDB0260N1007L

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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 2.6mOhm @ 27A, 10V 4V @ 250µA 118 nC @ 10 V ±20V 8545 pF @ 50 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF2804STRL

AUIRF2804STRL

MOSFET N-CH 40V 195A D2PAK

International Rectifier

3697 1.00
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AUIRF2804STRL

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQU12N20TU

FQU12N20TU

MOSFET N-CH 200V 9A I-PAK

Fairchild Semiconductor

3817 1.00
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FQU12N20TU

Datenblatt

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 280mOhm @ 4.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 910 pF @ 25 V - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R075CPXK

IPW60R075CPXK

IPW60R075 - 600V COOLMOS N-CHANN

Infineon Technologies

3991 1.00
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IPW60R075CPXK

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDD3680

FDD3680

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

2507 1.00
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FDD3680

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 25A (Ta) 6V, 10V 46mOhm @ 6.1A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 1735 pF @ 50 V - 68W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IPB80N04S2-H4

IPB80N04S2-H4

IPB80N04 - 20V-40V N-CHANNEL AUT

Infineon Technologies

2561 1.00
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IPB80N04S2-H4

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB4019PBF

IRFB4019PBF

IRFB4019 - 12V-300V N-CHANNEL PO

International Rectifier

3285 1.00
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IRFB4019PBF

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 17A (Tc) 10V 95mOhm @ 10A, 10V 4.9V @ 50µA 20 nC @ 10 V ±20V 800 pF @ 50 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF3710ZSTRL

AUIRF3710ZSTRL

MOSFET N-CH 100V 59A D2PAK

International Rectifier

2740 1.00
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AUIRF3710ZSTRL

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK98150-55A/CU135

BUK98150-55A/CU135

NOW NEXPERIA BUK98150-55A - POWE

Nexperia USA Inc.

3845 1.00
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BUK98150-55A/CU135

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
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