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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7607TRPBF

IRF7607TRPBF

IRF7607 - 12V-300V N-CHANNEL POW

International Rectifier

3196 1.00
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IRF7607TRPBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) 2.5V, 4.5V 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22 nC @ 5 V ±12V 1310 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7809AVTRPBF-1

IRF7809AVTRPBF-1

MOSFET N-CH 30V 13.3A 8SO

International Rectifier

3248 1.00
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IRF7809AVTRPBF-1

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13.3A (Ta) 4.5V 9mOhm @ 15A, 4.5V 1V @ 250µA 62 nC @ 5 V ±12V 3780 pF @ 16 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDPF035N06B_F152

FDPF035N06B_F152

MOSFET N-CH 60V 88A TO220F-3

Fairchild Semiconductor

2650 0.00
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FDPF035N06B_F152

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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 88A (Tc) - 3.5mOhm @ 88A, 10V 4V @ 250µA 99 nC @ 10 V ±20V 8030 pF @ 30 V - 46.3W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFS6535

AUIRFS6535

MOSFET N-CH 300V 19A D2PAK

International Rectifier

3506 1.00
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AUIRFS6535

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 300 V 19A (Tc) 10V 185mOhm @ 11A, 10V 5V @ 150µA 57 nC @ 10 V ±20V 2340 pF @ 25 V - 210W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BBS3002-DL-E

BBS3002-DL-E

MOSFET P-CH 60V 100A SMP-FD

Sanyo

3580 1.00
- +

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Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 100A (Ta) 4V, 10V 5.8mOhm @ 50A, 10V - 280 nC @ 10 V ±20V 13200 pF @ 20 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4435DY

SI4435DY

MOSFET P-CH 30V 8A 8SO

Fairchild Semiconductor

3384 1.00
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SI4435DY

Datenblatt

Bulk HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 20mOhm @ 8A, 10V 1V @ 250µA 60 nC @ 10 V ±20V 2320 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2V7002LT1G

2V7002LT1G

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi

2177 1.00
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2V7002LT1G

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Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Tc) 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 225mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SP000685844

SP000685844

IPP60R125C6XKSA1 - COOLMOS N-CHA

Infineon Technologies

2735 1.00
- +

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SP000685844

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRFR3410TRPBF

IRFR3410TRPBF

IRFR3410 - 12V-300V N-CHANNEL PO

International Rectifier

3144 1.00
- +

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IRFR3410TRPBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 39mOhm @ 18A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1690 pF @ 25 V - 3W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3006TRL7PP

IRFS3006TRL7PP

IRFS3006 - 12V-300V N-CHANNEL PO

International Rectifier

3516 1.00
- +

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IRFS3006TRL7PP

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 2.1mOhm @ 168A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8850 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQA65N20

FQA65N20

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor

2148 1.00
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FQA65N20

Datenblatt

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 65A (Tc) 10V 32mOhm @ 32.5A, 10V 5V @ 250µA 200 nC @ 10 V ±30V 7900 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFSL7530PBF

IRFSL7530PBF

MOSFET N-CH 60V 195A TO262

International Rectifier

2191 1.00
- +

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IRFSL7530PBF

Datenblatt

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.7V @ 250µA 411 nC @ 10 V ±20V 13703 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB4N80TM

FQB4N80TM

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor

2512 1.00
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FQB4N80TM

Datenblatt

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 3.6Ohm @ 1.95A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 880 pF @ 25 V - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS6699S

FDS6699S

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

3988 1.00
- +

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FDS6699S

Datenblatt

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 3.6mOhm @ 21A, 10V 3V @ 1mA 91 nC @ 10 V ±20V 3610 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPI041N12N3G

IPI041N12N3G

IPI041N12 - 12V-300V N-CHANNEL P

Infineon Technologies

2402 1.00
- +

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IPI041N12N3G

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
AUIRFS3107-7TRL

AUIRFS3107-7TRL

MOSFET N-CH 75V 240A D2PAK

International Rectifier

2046 1.00
- +

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AUIRFS3107-7TRL

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 240A (Tc) - 2.6mOhm @ 160A, 10V 4V @ 250µA 240 nC @ 10 V - 9200 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP60R125C6

IPP60R125C6

POWER FIELD-EFFECT TRANSISTOR, 3

Infineon Technologies

3024 1.00
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IPP60R125C6

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
BSS84AKW

BSS84AKW

NOW NEXPERIA BSS84AKW - SMALL SI

Nexperia USA Inc.

2983 1.00
- +

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Немедленный

Bulk * Active - - - - - - - - - - - - - -
PMZB350UPE,315

PMZB350UPE,315

NOW NEXPERIA PMZB350UPE - SMALL

NXP USA Inc.

3845 1.00
- +

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Немедленный

PMZB350UPE,315

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 1.8V, 4.5V 450mOhm @ 300mA, 4.5V 950mV @ 250µA 1.9 nC @ 4.5 V ±8V 127 pF @ 10 V - 360mW (Ta), 3.125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDM3622

FDM3622

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor

2273 1.00
- +

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FDM3622

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 4.4A (Ta) 6V, 10V 60mOhm @ 4.4A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 1090 pF @ 25 V - 2.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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