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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R6010ANX

R6010ANX

MOSFET N-CH 600V 10A TO220FM

Rohm Semiconductor

3027 2.50
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R6010ANX

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Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V - - - ±30V - - 50W (Tc) 150°C (TJ) Through Hole
RJK0301DPB-02#J0

RJK0301DPB-02#J0

MOSFET N-CH 30V 60A 5LFPAK

Renesas Electronics America Inc

2113 0.00
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RJK0301DPB-02#J0

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Ta) 4.5V, 10V 2.8mOhm @ 30A, 10V - 32 nC @ 4.5 V +16V, -12V 5000 pF @ 10 V - 65W (Tc) 150°C (TJ) Surface Mount
NVMFS6H818NLWFT1G

NVMFS6H818NLWFT1G

MOSFET N-CH 80V 22A/135A 5DFN

onsemi

3483 2.50
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NVMFS6H818NLWFT1G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 22A (Ta), 135A (Tc) 4.5V, 10V 3.2mOhm @ 20A, 10V 2V @ 190µA 64 nC @ 10 V ±20V 3844 pF @ 40 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMFS4C01NWFT1G

NVMFS4C01NWFT1G

MOSFET N-CH 30V 49A/319A 5DFN

onsemi

3077 2.51
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NVMFS4C01NWFT1G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 49A (Ta), 319A (Tc) 4.5V, 10V 0.9mOhm @ 30A, 10V 2.2V @ 250µA 139 nC @ 10 V ±20V 10144 pF @ 15 V - 3.84W (Ta), 161W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI120N04S401AKSA1

IPI120N04S401AKSA1

MOSFET N-CH 40V 120A TO262-3

Infineon Technologies

2934 1.00
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IPI120N04S401AKSA1

Datenblatt

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.9mOhm @ 100A, 10V 4V @ 140µA 176 nC @ 10 V ±20V 14000 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R420CFDFKSA1

IPW65R420CFDFKSA1

MOSFET N-CH 650V 8.7A TO247-3

Infineon Technologies

3440 2.51
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IPW65R420CFDFKSA1

Datenblatt

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 340µA 32 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R420CFDFKSA2

IPW65R420CFDFKSA2

MOSFET N-CH 650V 8.7A TO247-3

Infineon Technologies

2398 2.51
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IPW65R420CFDFKSA2

Datenblatt

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4864DY-T1-E3

SI4864DY-T1-E3

MOSFET N-CH 20V 17A 8SO

Vishay Siliconix

3671 2.51
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SI4864DY-T1-E3

Datenblatt

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 17A (Ta) 2.5V, 4.5V 3.5mOhm @ 25A, 4.5V 2V @ 250µA 70 nC @ 4.5 V ±8V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NVMJS1D6N06CLTWG

NVMJS1D6N06CLTWG

MOSFET N-CH 60V 38A/250A 8LFPAK

onsemi

3161 2.51
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NVMJS1D6N06CLTWG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 38A (Ta), 250A (Tc) 4.5V, 10V 1.36mOhm @ 50A, 10V 2V @ 250µA 91 nC @ 10 V ±20V 6660 pF @ 25 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPL60R180P6AUMA1

IPL60R180P6AUMA1

MOSFET N-CH 600V 22.4A 4VSON

Infineon Technologies

2793 2.51
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IPL60R180P6AUMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 22.4A (Tc) 10V 180mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB80N06S2H5ATMA2

IPB80N06S2H5ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

289 1.91
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IPB80N06S2H5ATMA2

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 4V @ 230µA 155 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOB282L

AOB282L

MOSFET N-CH 80V 18.5A/105A TO263

Alpha & Omega Semiconductor Inc.

2483 2.52
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AOB282L

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V 18.5A (Ta), 105A (Tc) 6V, 10V 3.2mOhm @ 20A, 10V 3.5V @ 250µA 178 nC @ 10 V ±20V 7765 pF @ 40 V - 2.1W (Ta), 272.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQP120N10-3M8_GE3

SQP120N10-3M8_GE3

MOSFET N-CH 100V 120A TO220AB

Vishay Siliconix

2035 2.52
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SQP120N10-3M8_GE3

Datenblatt

Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.8mOhm @ 20A, 10V 3.5V @ 250µA 190 nC @ 10 V ±20V 7230 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPTG025N08NM5ATMA1

IPTG025N08NM5ATMA1

TRENCH 40<-<100V PG-HSOG-8

Infineon Technologies

2727 2.46
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IPTG025N08NM5ATMA1

Datenblatt

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Ta), 184A (Tc) 6V, 10V 2.5mOhm @ 150A 10V 3.8V @ 108µA 87 nC @ 10 V ±20V 6500 pF @ 40 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STF26N65DM2

STF26N65DM2

MOSFET N-CH 650V 20A TO220FP

STMicroelectronics

3528 2.52
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STF26N65DM2

Datenblatt

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 35.5 nC @ 10 V ±25V 1480 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB4110GPBF

IRFB4110GPBF

MOSFET N-CH 100V 120A TO220AB

Infineon Technologies

3461 1.00
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IRFB4110GPBF

Datenblatt

Bulk,Tube HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL60S216

IRL60S216

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies

2721 1.00
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IRL60S216

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 1.95mOhm @ 100A, 10V 2.4V @ 250µA 255 nC @ 4.5 V ±20V 15330 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK12A55D(STA4,Q,M)

TK12A55D(STA4,Q,M)

MOSFET N-CH 550V 12A TO220SIS

Toshiba Semiconductor and Storage

3220 2.52
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TK12A55D(STA4,Q,M)

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 12A (Ta) 10V 570mOhm @ 6A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1550 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK10A80W,S4X

TK10A80W,S4X

MOSFET N-CH 800V 9.5A TO220SIS

Toshiba Semiconductor and Storage

3937 2.52
- +

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Немедленный

TK10A80W,S4X

Datenblatt

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 9.5A (Ta) 10V 550mOhm @ 4.8A, 10V 4V @ 450µA 19 nC @ 10 V ±20V 1150 pF @ 300 V - 40W (Tc) 150°C Through Hole
IXTA100N04T2

IXTA100N04T2

MOSFET N-CH 40V 100A TO263

IXYS

2026 2.53
- +

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Немедленный

IXTA100N04T2

Datenblatt

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 7mOhm @ 25A, 10V 4V @ 250µA 25.5 nC @ 10 V ±20V 2690 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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