Добро пожаловать Element Technology Co., Ltd.!

+86 15361839241 +86 0755-23603516
Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NVMFS4C308NWFT1G

NVMFS4C308NWFT1G

TRENCH 30V NCH

onsemi

2783 2.43
- +

Добавить

Немедленный

NVMFS4C308NWFT1G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 17.2A (Ta), 55A (Tc) 4.5V, 10V 4.8mOhm @ 30A, 10V 2.1V @ 250µA 18.2 nC @ 10 V ±20V 1670 pF @ 15 V - 3W (Ta), 30.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
AOTF125A60L

AOTF125A60L

MOSFET N-CH 600V 28A TO220F

Alpha & Omega Semiconductor Inc.

3207 2.43
- +

Добавить

Немедленный

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tj) 10V 125mOhm @ 14A, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 2993 pF @ 100 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT125A60L

AOT125A60L

MOSFET N-CH 600V 28A TO220

Alpha & Omega Semiconductor Inc.

3685 2.43
- +

Добавить

Немедленный

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 125mOhm @ 14A, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 2993 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOWF125A60

AOWF125A60

MOSFET N-CH 600V 28A TO262F

Alpha & Omega Semiconductor Inc.

2804 2.43
- +

Добавить

Немедленный

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tj) 10V 125mOhm @ 14A, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 2993 pF @ 100 V - 32.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R299CPXKSA1

IPA60R299CPXKSA1

MOSFET N-CH 600V 11A TO220-FP

Infineon Technologies

2965 1.00
- +

Добавить

Немедленный

IPA60R299CPXKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF6641TRPBF

IRF6641TRPBF

MOSFET N-CH 200V 4.6A DIRECTFET

Infineon Technologies

4800 1.85
- +

Добавить

Немедленный

IRF6641TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 4.6A (Ta), 26A (Tc) 10V 59.9mOhm @ 5.5A, 10V 4.9V @ 150µA 48 nC @ 10 V ±20V 2290 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
SIHB22N60E-E3

SIHB22N60E-E3

MOSFET N-CH 600V 21A D2PAK

Vishay Siliconix

2415 2.44
- +

Добавить

Немедленный

SIHB22N60E-E3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB65R230CFD7AATMA1

IPB65R230CFD7AATMA1

AUTOMOTIVE_COOLMOS PG-TO263-3

Infineon Technologies

3181 2.38
- +

Добавить

Немедленный

IPB65R230CFD7AATMA1

Datenblatt

Tape & Reel (TR) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 230mOhm @ 5.2A, 10V 4.5V @ 260µA 23 nC @ 10 V ±20V 1044 pF @ 400 V - 63W (Tc) -40°C ~ 150°C (TJ) Surface Mount
TSM60NB380CH C5G

TSM60NB380CH C5G

MOSFET N-CH 600V 9.5A TO251

Taiwan Semiconductor Corporation

2657 2.44
- +

Добавить

Немедленный

TSM60NB380CH C5G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9.5A (Tc) 10V 380mOhm @ 2.85A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 795 pF @ 100 V - 83W (Tc) -50°C ~ 150°C (TJ) Through Hole
STP26N65DM2

STP26N65DM2

MOSFET N-CH 650V 20A TO220

STMicroelectronics

3742 2.44
- +

Добавить

Немедленный

STP26N65DM2

Datenblatt

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 35.5 nC @ 10 V ±25V 1480 pF @ 100 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI076N12N3GAKSA1

IPI076N12N3GAKSA1

MOSFET N-CH 120V 100A TO262-3

Infineon Technologies

2738 2.44
- +

Добавить

Немедленный

IPI076N12N3GAKSA1

Datenblatt

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 100A (Tc) 10V 7.6mOhm @ 100A, 10V 4V @ 130µA 101 nC @ 10 V ±20V 6640 pF @ 60 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK2420

2SK2420

MOSFET N-CH 60V 30A TO220F

Sanken

2465 2.45
- +

Добавить

Немедленный

2SK2420

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Ta) 10V 28mOhm @ 15A, 10V 4V @ 250µA - ±20V 2200 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
SKP202VR

SKP202VR

MOSFET N-CH 200V 45A TO263-3

Sanken

2111 2.45
- +

Добавить

Немедленный

SKP202VR

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 45A (Ta) 10V 53mOhm @ 20A, 10V 4.5V @ 1mA - ±30V 2000 pF @ 25 V - 95W (Tc) 150°C (TJ) Surface Mount
TK10Q60W,S1VQ

TK10Q60W,S1VQ

MOSFET N-CH 600V 9.7A IPAK

Toshiba Semiconductor and Storage

3159 2.45
- +

Добавить

Немедленный

TK10Q60W,S1VQ

Datenblatt

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 430mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 80W (Tc) 150°C (TJ) Through Hole
SI7880ADP-T1-GE3

SI7880ADP-T1-GE3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix

3461 2.46
- +

Добавить

Немедленный

SI7880ADP-T1-GE3

Datenblatt

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 3mOhm @ 20A, 10V 3V @ 250µA 125 nC @ 10 V ±20V 5600 pF @ 15 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP22N60EL-GE3

SIHP22N60EL-GE3

MOSFET N-CH 600V 21A TO220AB

Vishay Siliconix

3828 2.46
- +

Добавить

Немедленный

SIHP22N60EL-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 197mOhm @ 11A, 10V 5V @ 250µA 74 nC @ 10 V ±30V 1690 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK25V60X,LQ

TK25V60X,LQ

MOSFET N-CH 600V 25A 4DFN

Toshiba Semiconductor and Storage

2757 2.46
- +

Добавить

Немедленный

TK25V60X,LQ

Datenblatt

Tape & Reel (TR) DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 135mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C Surface Mount
NVMFS5C410NWFAFT3G

NVMFS5C410NWFAFT3G

MOSFET N-CH 40V 46A/300A 5DFN

onsemi

2300 2.46
- +

Добавить

Немедленный

NVMFS5C410NWFAFT3G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 300A (Tc) 10V 0.92mOhm @ 50A, 10V 3.5V @ 250µA 86 nC @ 10 V ±20V 6100 pF @ 25 V - 3.9W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R6020FNJTL

R6020FNJTL

MOSFET N-CH 600V 20A LPT

Rohm Semiconductor

960 4.05
- +

Добавить

Немедленный

R6020FNJTL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) * Not For New Designs - - - - - - - - - - - - - -
IPB50R199CPATMA1

IPB50R199CPATMA1

MOSFET N-CH 550V 17A TO263-3

Infineon Technologies

3230 2.46
- +

Добавить

Немедленный

IPB50R199CPATMA1

Datenblatt

Tape & Reel (TR),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 550 V 17A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 45 nC @ 10 V ±20V 1800 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 42446 Records«Prev1... 11531154115511561157115811591160...2123Next»
Запрос котировок
Номер запчасти
А
Связь
Электронная почта
Замечания
  • Домой

    Домой

    Продукты

    Продукты

    Телефон

    Телефон

    Пользователи

    Пользователи