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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB019N08NF2SATMA1

IPB019N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-3

Infineon Technologies

2190 2.34
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Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IRFSL7430PBF

IRFSL7430PBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies

3045 2.40
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IRFSL7430PBF

Datenblatt

Tube HEXFET®, StrongIRFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STFU14N80K5

STFU14N80K5

MOSFET N-CH 800V 12A TO220FP

STMicroelectronics

2654 2.40
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STFU14N80K5

Datenblatt

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 445mOhm @ 6A, 10V 5V @ 100µA 22 nC @ 10 V ±30V 620 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMT185N60S5H

NTMT185N60S5H

SUPERFET5 FAST 185MOHM PQFN88

onsemi

2135 2.40
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NTMT185N60S5H

Datenblatt

Tape & Reel (TR) SuperFET® III Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 185mOhm @ 7.5A, 10V 4.3V @ 1.4mA 25 nC @ 10 V ±30V 1350 pF @ 400 V - 116W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK13A50DA(STA4,Q,M

TK13A50DA(STA4,Q,M

MOSFET N-CH 500V 12.5A TO220SIS

Toshiba Semiconductor and Storage

2711 2.40
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TK13A50DA(STA4,Q,M

Datenblatt

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 12.5A (Ta) 10V 470mOhm @ 6.3A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1550 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK14A45DA(STA4,QM)

TK14A45DA(STA4,QM)

MOSFET N-CH 450V 13.5A TO220SIS

Toshiba Semiconductor and Storage

3152 2.40
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TK14A45DA(STA4,QM)

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 450 V 13.5A - 410mOhm @ 6.8A, 10V - - - - - - - Through Hole
IXTY1N120PTRL

IXTY1N120PTRL

MOSFET N-CH 1200V 1A TO252

IXYS

3625 2.40
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Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 1A (Tc) 10V 20Ohm @ 500mA, 10V 4.5V @ 50µA 17.6 nC @ 10 V ±30V 445 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB039N10N3GE8187ATMA1

IPB039N10N3GE8187ATMA1

MOSFET N-CH 100V 160A TO263-7

Infineon Technologies

2670 2.41
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IPB039N10N3GE8187ATMA1

Datenblatt

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Tc) 6V, 10V 3.9mOhm @ 100A, 10V 3.5V @ 160µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STH150N10F7-2

STH150N10F7-2

MOSFET N-CH 100V 110A H2PAK-2

STMicroelectronics

2474 4.01
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STH150N10F7-2

Datenblatt

Tape & Reel (TR),Cut Tape (CT) DeepGATE™, STripFET™ VII Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 3.9mOhm @ 55A, 10V 4.5V @ 250µA 117 nC @ 10 V ±20V 8115 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPC218N04N3X7SA1

IPC218N04N3X7SA1

MV POWER MOS

Infineon Technologies

2361 2.41
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IPC218N04N3X7SA1

Datenblatt

Bulk * Not For New Designs - - - - - - - - - - - - - -
DMTH10H005SCT

DMTH10H005SCT

MOSFET N-CH 100V 140A TO220AB

Diodes Incorporated

2382 2.41
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DMTH10H005SCT

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 5mOhm @ 13A, 10V 4V @ 250µA 111.7 nC @ 10 V ±20V 8474 pF @ 50 V - 187W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTY1N80P

IXTY1N80P

MOSFET N-CH 800V 1A TO252

IXYS

2826 2.41
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IXTY1N80P

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 800 V 1A (Tc) 10V 14Ohm @ 500mA, 10V 4V @ 50µA 9 nC @ 10 V ±20V 250 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF150DM115XTMA1

IRF150DM115XTMA1

TRENCH >=100V DIRECTFET

Infineon Technologies

2983 2.36
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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 150 V - - - - - - - - - - -
FKP202

FKP202

MOSFET N-CH 200V 45A TO220

Sanken

2438 2.42
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FKP202

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 45A (Ta) 10V 53mOhm @ 22A, 10V 4.5V @ 1mA - ±30V 2000 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
IPB65R190CFDATMA2

IPB65R190CFDATMA2

MOSFET N-CH 650V 17.5A TO263-3

Infineon Technologies

3242 2.42
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IPB65R190CFDATMA2

Datenblatt

Tape & Reel (TR) CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMTH10H2M5STLW-13

DMTH10H2M5STLW-13

MOSFET BVDSS: 61V~100V POWERDI10

Diodes Incorporated

2897 2.43
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DMTH10H2M5STLW-13

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 215A (Tc) 10V 2.5mOhm @ 30A, 10V 4V @ 250µA 124.4 nC @ 10 V ±20V 8450 pF @ 50 V - 5.8W (Ta), 230.8W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMJ65H430SCTI

DMJ65H430SCTI

MOSFET BVDSS: 501V~650V ITO-220A

Diodes Incorporated

2759 2.43
- +

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DMJ65H430SCTI

Datenblatt

Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 430mOhm @ 5A, 10V 5V @ 250µA 24.5 nC @ 10 V ±30V 775 pF @ 100 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6012ANJTL

R6012ANJTL

MOSFET N-CH 600V 12A LPTS

Rohm Semiconductor

3104 2.43
- +

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R6012ANJTL

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Ta) 10V 420mOhm @ 6A, 10V 4.5V @ 1mA 35 nC @ 10 V ±30V 1300 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
TSM70N750CH C5G

TSM70N750CH C5G

MOSFET N-CHANNEL 700V 6A TO251

Taiwan Semiconductor Corporation

3243 2.43
- +

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Немедленный

TSM70N750CH C5G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 6A (Tc) 10V 750mOhm @ 1.8A, 10V 4V @ 250µA 10.7 nC @ 10 V ±30V 555 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL2910STRRPBF

IRL2910STRRPBF

MOSFET N-CH 100V 55A D2PAK

Infineon Technologies

2902 2.43
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IRL2910STRRPBF

Datenblatt

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) - 26mOhm @ 29A, 10V 2V @ 250µA 140 nC @ 5 V - 3700 pF @ 25 V - - - Surface Mount
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