Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDA20N50-F109MOSFET N-CH 500V 22A TO3PN |
16600 | 1.96 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | UniFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 230mOhm @ 11A, 10V | 5V @ 250µA | 59.5 nC @ 10 V | ±30V | 3120 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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TK7E80W,S1XMOSFET N-CH 800V 6.5A TO220 |
3537 | 2.56 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6.5A (Ta) | 10V | 950mOhm @ 3.3A, 10V | 4V @ 280µA | 13 nC @ 10 V | ±20V | 700 pF @ 300 V | - | 110W (Tc) | 150°C | Through Hole |
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FDB8443MOSFET N-CH 40V 25A/120A TO263AB |
3801 | 3.72 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 25A (Ta), 120A (Tc) | 10V | 3mOhm @ 80A, 10V | 4V @ 250µA | 185 nC @ 10 V | ±20V | 9310 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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NTHL185N60S5HSUPERFET5 FAST 185MOHM TO-247-3 |
2395 | 2.56 |
ДобавитьНемедленный |
![]() Datenblatt |
Tray | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 185mOhm @ 7.5A, 10V | 4.3V @ 1.4mA | 25 nC @ 10 V | ±30V | 1350 pF @ 400 V | - | 116W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AOW29S50MOSFET N-CH 500V 29A TO262 |
2571 | 2.57 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | aMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 29A (Tc) | 10V | 150mOhm @ 14.5A, 10V | 3.9V @ 250µA | 26.6 nC @ 10 V | ±30V | 1312 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IAUT165N08S5N029ATMA1MOSFET N-CH 80V 165A 8HSOF |
3669 | 2.57 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | OptiMOS™-5 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 80 V | 165A (Tc) | 6V, 10V | 2.9mOhm @ 80A, 10V | 3.8V @ 108µA | 90 nC @ 10 V | ±20V | 6370 pF @ 40 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SIHH21N60E-T1-GE3MOSFET N-CH 600V 20A PPAK 8 X 8 |
2631 | 4.55 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 83 nC @ 10 V | ±30V | 2015 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRFI3306GPBFMOSFET N-CH 60V 71A TO220 |
16305 | 1.97 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | - | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 60 V | 71A (Tc) | 10V | 4.2mOhm @ 43A, 10V | 4V @ 150µA | 135 nC @ 10 V | ±20V | 4685 pF @ 50 V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXTA4N80PMOSFET N-CH 800V 3.6A TO263 |
2150 | 2.58 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.6A (Tc) | 10V | 3.4Ohm @ 500mA, 10V | 5.5V @ 100µA | 14.2 nC @ 10 V | ±30V | 750 pF @ 25 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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FDP047AN08A0-F102MOSFET N-CH 75V 80A TO220-3 |
2858 | 2.58 |
ДобавитьНемедленный |
Tube | - | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 75 V | 15A (Tc) | 6V, 10V | - | - | - | ±20V | - | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
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IXTY1R4N100PMOSFET N-CH 1000V 1.4A TO252 |
3837 | 2.58 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1.4A (Tc) | 10V | 11Ohm @ 500mA, 10V | 4.5V @ 50µA | 17.8 nC @ 10 V | ±20V | 450 pF @ 25 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IXTP1R4N100PMOSFET N-CH 1000V 1.4A TO220AB |
2615 | 2.58 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1.4A (Tc) | 10V | 11Ohm @ 500mA, 10V | 4.5V @ 50µA | 17.8 nC @ 10 V | ±20V | 450 pF @ 25 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHG17N60D-E3MOSFET N-CH 600V 17A TO247AC |
3560 | 2.58 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 340mOhm @ 8A, 10V | 5V @ 250µA | 90 nC @ 10 V | ±30V | 1780 pF @ 100 V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHG17N60D-GE3MOSFET N-CH 600V 17A TO247AC |
3957 | 2.58 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 340mOhm @ 8A, 10V | 5V @ 250µA | 90 nC @ 10 V | ±30V | 1780 pF @ 100 V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPI320N20N3GAKSA1MOSFET N-CH 200V 34A TO262-3 |
3104 | 1.00 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 200 V | 34A (Tc) | 10V | 32mOhm @ 34A, 10V | 4V @ 90µA | 29 nC @ 10 V | ±20V | 2350 pF @ 100 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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AOT29S50LMOSFET N-CH 500V 29A TO220 |
3650 | 2.59 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | aMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 29A (Tc) | 10V | 150mOhm @ 14.5A, 10V | 3.9V @ 250µA | 26.6 nC @ 10 V | ±30V | 1312 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHH11N65E-T1-GE3MOSFET N-CH 650V 12A PPAK 8 X 8 |
2939 | 2.59 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 363mOhm @ 6A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±30V | 1257 pF @ 100 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IXTA200N055T2-TRLMOSFET N-CH 55V 200A TO263 |
3743 | 2.59 |
ДобавитьНемедленный |
Tape & Reel (TR) | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 200A (Tc) | 10V | 4.2mOhm @ 50A, 10V | 4V @ 250µA | 109 nC @ 10 V | ±20V | 6970 pF @ 25 V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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IXTA220N04T2-TRLMOSFET N-CH 40V 220A TO263 |
3897 | 2.59 |
ДобавитьНемедленный |
Tape & Reel (TR) | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 220A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 4V @ 250µA | 112 nC @ 10 V | ±20V | 6820 pF @ 25 V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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TK17E65W,S1XMOSFET N-CH 650V 17.3A TO220 |
2258 | 2.59 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.3A (Ta) | 10V | 200mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 165W (Tc) | 150°C (TJ) | Through Hole |