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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDA20N50-F109

FDA20N50-F109

MOSFET N-CH 500V 22A TO3PN

onsemi

16600 1.96
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FDA20N50-F109

Datenblatt

Bulk,Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 230mOhm @ 11A, 10V 5V @ 250µA 59.5 nC @ 10 V ±30V 3120 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK7E80W,S1X

TK7E80W,S1X

MOSFET N-CH 800V 6.5A TO220

Toshiba Semiconductor and Storage

3537 2.56
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TK7E80W,S1X

Datenblatt

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Ta) 10V 950mOhm @ 3.3A, 10V 4V @ 280µA 13 nC @ 10 V ±20V 700 pF @ 300 V - 110W (Tc) 150°C Through Hole
FDB8443

FDB8443

MOSFET N-CH 40V 25A/120A TO263AB

onsemi

3801 3.72
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FDB8443

Datenblatt

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 25A (Ta), 120A (Tc) 10V 3mOhm @ 80A, 10V 4V @ 250µA 185 nC @ 10 V ±20V 9310 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTHL185N60S5H

NTHL185N60S5H

SUPERFET5 FAST 185MOHM TO-247-3

onsemi

2395 2.56
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NTHL185N60S5H

Datenblatt

Tray SuperFET® III Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 185mOhm @ 7.5A, 10V 4.3V @ 1.4mA 25 nC @ 10 V ±30V 1350 pF @ 400 V - 116W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOW29S50

AOW29S50

MOSFET N-CH 500V 29A TO262

Alpha & Omega Semiconductor Inc.

2571 2.57
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AOW29S50

Datenblatt

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 29A (Tc) 10V 150mOhm @ 14.5A, 10V 3.9V @ 250µA 26.6 nC @ 10 V ±30V 1312 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
IAUT165N08S5N029ATMA1

IAUT165N08S5N029ATMA1

MOSFET N-CH 80V 165A 8HSOF

Infineon Technologies

3669 2.57
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IAUT165N08S5N029ATMA1

Datenblatt

Tape & Reel (TR) OptiMOS™-5 Not For New Designs N-Channel MOSFET (Metal Oxide) 80 V 165A (Tc) 6V, 10V 2.9mOhm @ 80A, 10V 3.8V @ 108µA 90 nC @ 10 V ±20V 6370 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHH21N60E-T1-GE3

SIHH21N60E-T1-GE3

MOSFET N-CH 600V 20A PPAK 8 X 8

Vishay Siliconix

2631 4.55
- +

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SIHH21N60E-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 176mOhm @ 11A, 10V 4V @ 250µA 83 nC @ 10 V ±30V 2015 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI3306GPBF

IRFI3306GPBF

MOSFET N-CH 60V 71A TO220

Infineon Technologies

16305 1.97
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IRFI3306GPBF

Datenblatt

Bulk,Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 71A (Tc) 10V 4.2mOhm @ 43A, 10V 4V @ 150µA 135 nC @ 10 V ±20V 4685 pF @ 50 V - 46W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA4N80P

IXTA4N80P

MOSFET N-CH 800V 3.6A TO263

IXYS

2150 2.58
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IXTA4N80P

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 800 V 3.6A (Tc) 10V 3.4Ohm @ 500mA, 10V 5.5V @ 100µA 14.2 nC @ 10 V ±30V 750 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDP047AN08A0-F102

FDP047AN08A0-F102

MOSFET N-CH 75V 80A TO220-3

onsemi

2858 2.58
- +

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Tube - Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 15A (Tc) 6V, 10V - - - ±20V - - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTY1R4N100P

IXTY1R4N100P

MOSFET N-CH 1000V 1.4A TO252

IXYS

3837 2.58
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IXTY1R4N100P

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 1.4A (Tc) 10V 11Ohm @ 500mA, 10V 4.5V @ 50µA 17.8 nC @ 10 V ±20V 450 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP1R4N100P

IXTP1R4N100P

MOSFET N-CH 1000V 1.4A TO220AB

IXYS

2615 2.58
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IXTP1R4N100P

Datenblatt

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 1.4A (Tc) 10V 11Ohm @ 500mA, 10V 4.5V @ 50µA 17.8 nC @ 10 V ±20V 450 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG17N60D-E3

SIHG17N60D-E3

MOSFET N-CH 600V 17A TO247AC

Vishay Siliconix

3560 2.58
- +

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SIHG17N60D-E3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 340mOhm @ 8A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 1780 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG17N60D-GE3

SIHG17N60D-GE3

MOSFET N-CH 600V 17A TO247AC

Vishay Siliconix

3957 2.58
- +

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SIHG17N60D-GE3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 340mOhm @ 8A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 1780 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI320N20N3GAKSA1

IPI320N20N3GAKSA1

MOSFET N-CH 200V 34A TO262-3

Infineon Technologies

3104 1.00
- +

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IPI320N20N3GAKSA1

Datenblatt

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 34A (Tc) 10V 32mOhm @ 34A, 10V 4V @ 90µA 29 nC @ 10 V ±20V 2350 pF @ 100 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOT29S50L

AOT29S50L

MOSFET N-CH 500V 29A TO220

Alpha & Omega Semiconductor Inc.

3650 2.59
- +

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AOT29S50L

Datenblatt

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 29A (Tc) 10V 150mOhm @ 14.5A, 10V 3.9V @ 250µA 26.6 nC @ 10 V ±30V 1312 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH11N65E-T1-GE3

SIHH11N65E-T1-GE3

MOSFET N-CH 650V 12A PPAK 8 X 8

Vishay Siliconix

2939 2.59
- +

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SIHH11N65E-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 363mOhm @ 6A, 10V 4V @ 250µA 68 nC @ 10 V ±30V 1257 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA200N055T2-TRL

IXTA200N055T2-TRL

MOSFET N-CH 55V 200A TO263

IXYS

3743 2.59
- +

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Tape & Reel (TR) TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 200A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 109 nC @ 10 V ±20V 6970 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA220N04T2-TRL

IXTA220N04T2-TRL

MOSFET N-CH 40V 220A TO263

IXYS

3897 2.59
- +

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Tape & Reel (TR) TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 220A (Tc) 10V 3.5mOhm @ 50A, 10V 4V @ 250µA 112 nC @ 10 V ±20V 6820 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK17E65W,S1X

TK17E65W,S1X

MOSFET N-CH 650V 17.3A TO220

Toshiba Semiconductor and Storage

2258 2.59
- +

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Немедленный

TK17E65W,S1X

Datenblatt

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 200mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C (TJ) Through Hole
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