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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI7374DP-T1-GE3

SI7374DP-T1-GE3

MOSFET N-CH 30V 24A PPAK SO-8

Vishay Siliconix

2760 1.88
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SI7374DP-T1-GE3

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Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 5.5mOhm @ 23.8A, 10V 2.8V @ 250µA 122 nC @ 10 V ±20V 5500 pF @ 15 V - 5W (Ta), 56W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA18N60E-E3

SIHA18N60E-E3

MOSFET N-CHANNEL 600V 18A TO220

Vishay Siliconix

3667 1.88
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SIHA18N60E-E3

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Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 202mOhm @ 9A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUD25N15-52-T4-E3

SUD25N15-52-T4-E3

MOSFET N-CH 150V 25A TO252

Vishay Siliconix

2058 1.89
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SUD25N15-52-T4-E3

Datenblatt

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 25A (Tc) 6V, 10V 52mOhm @ 5A, 10V 4V @ 250µA 40 nC @ 10 V ±20V 1725 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMYS1D2N04CLTWG

NVMYS1D2N04CLTWG

MOSFET N-CH 40V 44A/258A LFPAK4

onsemi

3288 1.89
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NVMYS1D2N04CLTWG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 44A (Ta), 258A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 180µA 109 nC @ 10 V ±20V 6330 pF @ 20 V - 3.9W (Ta), 134W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STF22N60DM6

STF22N60DM6

MOSFET N-CH 600V 15A TO220FP

STMicroelectronics

2267 1.89
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Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 230mOhm @ 7.5A, 10V 4.75V @ 250µA 20 nC @ 10 V ±25V 800 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIE864DF-T1-GE3

SIE864DF-T1-GE3

MOSFET N-CH 30V 45A 10POLARPAK

Vishay Siliconix

3469 0.00
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SIE864DF-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 4.5V, 10V 5.6mOhm @ 20A, 10V 2V @ 250µA 38 nC @ 10 V ±20V 1510 pF @ 15 V - 5.2W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMTH4M70SPGW-13

DMTH4M70SPGW-13

MOSFET BVDSS: 31V~40V POWERDI808

Diodes Incorporated

2543 1.89
- +

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DMTH4M70SPGW-13

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 460A (Tc) 10V 0.7mOhm @ 25A, 10V 4V @ 250µA 117.1 nC @ 10 V ±20V 10053 pF @ 20 V - 5.6W (Ta), 428W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHFB11N50A-E3

SIHFB11N50A-E3

MOSFET N-CH 500V 11A TO220AB

Vishay Siliconix

2308 1.89
- +

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SIHFB11N50A-E3

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMJS1D2N04CLTWG

NVMJS1D2N04CLTWG

MOSFET N-CH 40V 41A/237A 8LFPAK

onsemi

3912 1.89
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Немедленный

NVMJS1D2N04CLTWG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 237A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 170µA 93 nC @ 10 V ±20V 5600 pF @ 25 V - 3.8W (Ta), 128W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPL65R340CFDAUMA1

IPL65R340CFDAUMA1

MOSFET N-CH 650V 10.9A THIN-PAK

Infineon Technologies

2634 1.00
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IPL65R340CFDAUMA1

Datenblatt

Tape & Reel (TR),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 10.9A (Tc) 10V 340mOhm @ 4.4A, 10V 4.5V @ 400µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -40°C ~ 150°C (TJ) Surface Mount
STI20N65M5

STI20N65M5

MOSFET N-CH 650V 18A I2PAK

STMicroelectronics

3436 1.90
- +

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STI20N65M5

Datenblatt

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 190mOhm @ 9A, 10V 5V @ 250µA 36 nC @ 10 V ±25V 1434 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
STL285N4F7AG

STL285N4F7AG

MOSFET N-CH 40V 120A POWERFLAT

STMicroelectronics

3277 1.90
- +

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Немедленный

Tape & Reel (TR) STripFET™ F7 Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.1mOhm @ 24A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 5600 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI50N10S3L16AKSA1

IPI50N10S3L16AKSA1

MOSFET N-CH 100V 50A TO262-3

Infineon Technologies

10000 1.20
- +

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Немедленный

IPI50N10S3L16AKSA1

Datenblatt

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 4.5V, 10V 15.7mOhm @ 50A, 10V 2.4V @ 60µA 64 nC @ 10 V ±20V 4180 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB80P04P405ATMA1

IPB80P04P405ATMA1

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies

2077 1.90
- +

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Немедленный

IPB80P04P405ATMA1

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.9mOhm @ 80A, 10V 4V @ 250µA 151 nC @ 10 V ±20V 10300 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80P04P4L04ATMA1

IPB80P04P4L04ATMA1

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies

2553 1.00
- +

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Немедленный

IPB80P04P4L04ATMA1

Datenblatt

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 4.4mOhm @ 80A, 10V 2.2V @ 250µA 176 nC @ 10 V ±16V 3800 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMN6010SCTB-13

DMN6010SCTB-13

MOSFET BVDSS: 41V~60V TO263 T&R

Diodes Incorporated

2533 1.90
- +

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Немедленный

DMN6010SCTB-13

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 128A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 46 nC @ 10 V ±20V 2692 pF @ 25 V - 5W (Ta), 312W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMNH6010SCTB-13

DMNH6010SCTB-13

MOSFET BVDSS: 41V~60V TO263 T&R

Diodes Incorporated

3007 1.90
- +

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Немедленный

DMNH6010SCTB-13

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 133A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 46 nC @ 10 V ±20V 2692 pF @ 25 V - 5W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL7434PBF

IRFSL7434PBF

MOSFET N-CH 40V 195A TO262

Infineon Technologies

3436 1.90
- +

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Немедленный

IRFSL7434PBF

Datenblatt

Tube HEXFET®, StrongIRFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB65R225C7ATMA2

IPB65R225C7ATMA2

MOSFET N-CH 650V 11A TO263-3

Infineon Technologies

2158 1.00
- +

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Немедленный

IPB65R225C7ATMA2

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 225mOhm @ 4.8A, 10V 4V @ 240µA 20 nC @ 10 V ±20V 996 pF @ 400 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRLR3636TRL

AUIRLR3636TRL

MOSFET N-CH 60V 99A DPAK

Infineon Technologies

2482 1.90
- +

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Немедленный

AUIRLR3636TRL

Datenblatt

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V - 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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