Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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SI7374DP-T1-GE3MOSFET N-CH 30V 24A PPAK SO-8 |
2760 | 1.88 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Tc) | 4.5V, 10V | 5.5mOhm @ 23.8A, 10V | 2.8V @ 250µA | 122 nC @ 10 V | ±20V | 5500 pF @ 15 V | - | 5W (Ta), 56W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIHA18N60E-E3MOSFET N-CHANNEL 600V 18A TO220 |
3667 | 1.88 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 202mOhm @ 9A, 10V | 4V @ 250µA | 92 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SUD25N15-52-T4-E3MOSFET N-CH 150V 25A TO252 |
2058 | 1.89 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 25A (Tc) | 6V, 10V | 52mOhm @ 5A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±20V | 1725 pF @ 25 V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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NVMYS1D2N04CLTWGMOSFET N-CH 40V 44A/258A LFPAK4 |
3288 | 1.89 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 44A (Ta), 258A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 180µA | 109 nC @ 10 V | ±20V | 6330 pF @ 20 V | - | 3.9W (Ta), 134W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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STF22N60DM6MOSFET N-CH 600V 15A TO220FP |
2267 | 1.89 |
ДобавитьНемедленный |
Tube | MDmesh™ M6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 230mOhm @ 7.5A, 10V | 4.75V @ 250µA | 20 nC @ 10 V | ±25V | 800 pF @ 100 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
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SIE864DF-T1-GE3MOSFET N-CH 30V 45A 10POLARPAK |
3469 | 0.00 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 45A (Tc) | 4.5V, 10V | 5.6mOhm @ 20A, 10V | 2V @ 250µA | 38 nC @ 10 V | ±20V | 1510 pF @ 15 V | - | 5.2W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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DMTH4M70SPGW-13MOSFET BVDSS: 31V~40V POWERDI808 |
2543 | 1.89 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 460A (Tc) | 10V | 0.7mOhm @ 25A, 10V | 4V @ 250µA | 117.1 nC @ 10 V | ±20V | 10053 pF @ 20 V | - | 5.6W (Ta), 428W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SIHFB11N50A-E3MOSFET N-CH 500V 11A TO220AB |
2308 | 1.89 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±30V | 1423 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NVMJS1D2N04CLTWGMOSFET N-CH 40V 41A/237A 8LFPAK |
3912 | 1.89 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 41A (Ta), 237A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 170µA | 93 nC @ 10 V | ±20V | 5600 pF @ 25 V | - | 3.8W (Ta), 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPL65R340CFDAUMA1MOSFET N-CH 650V 10.9A THIN-PAK |
2634 | 1.00 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Bulk | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 10.9A (Tc) | 10V | 340mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104.2W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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STI20N65M5MOSFET N-CH 650V 18A I2PAK |
3436 | 1.90 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±25V | 1434 pF @ 100 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STL285N4F7AGMOSFET N-CH 40V 120A POWERFLAT |
3277 | 1.90 |
ДобавитьНемедленный |
Tape & Reel (TR) | STripFET™ F7 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 1.1mOhm @ 24A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±20V | 5600 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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IPI50N10S3L16AKSA1MOSFET N-CH 100V 50A TO262-3 |
10000 | 1.20 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk,Tube | OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 4.5V, 10V | 15.7mOhm @ 50A, 10V | 2.4V @ 60µA | 64 nC @ 10 V | ±20V | 4180 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPB80P04P405ATMA1MOSFET P-CH 40V 80A TO263-3 |
2077 | 1.90 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 4.9mOhm @ 80A, 10V | 4V @ 250µA | 151 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPB80P04P4L04ATMA1MOSFET P-CH 40V 80A TO263-3 |
2553 | 1.00 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Bulk | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 2.2V @ 250µA | 176 nC @ 10 V | ±16V | 3800 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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DMN6010SCTB-13MOSFET BVDSS: 41V~60V TO263 T&R |
2533 | 1.90 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 128A (Tc) | 10V | 10mOhm @ 25A, 10V | 4V @ 1mA | 46 nC @ 10 V | ±20V | 2692 pF @ 25 V | - | 5W (Ta), 312W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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DMNH6010SCTB-13MOSFET BVDSS: 41V~60V TO263 T&R |
3007 | 1.90 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 133A (Tc) | 10V | 10mOhm @ 25A, 10V | 4V @ 1mA | 46 nC @ 10 V | ±20V | 2692 pF @ 25 V | - | 5W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFSL7434PBFMOSFET N-CH 40V 195A TO262 |
3436 | 1.90 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HEXFET®, StrongIRFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324 nC @ 10 V | ±20V | 10820 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPB65R225C7ATMA2MOSFET N-CH 650V 11A TO263-3 |
2158 | 1.00 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20 nC @ 10 V | ±20V | 996 pF @ 400 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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AUIRLR3636TRLMOSFET N-CH 60V 99A DPAK |
2482 | 1.90 |
ДобавитьНемедленный |
![]() Datenblatt |
Tape & Reel (TR) | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | - | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49 nC @ 4.5 V | - | 3779 pF @ 50 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |